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memBrain™ is a neuromorphic memory technology that enhances edge AI processing capabilities through its innovative design. Using SuperFlash® technology, memBrain™ efficiently handles deep neural network computations, particularly excelling in Vector Matrix Multiplication (VMM) for AI inference. Its unique architecture reduces system latency and energy consumption by storing synaptic weights directly within the memory cells. memBrain™ improves the performance of AI models by facilitating massive Multiply-Accumulate (MAC) operations directly in the storage array, minimizing the need for external DRAM. This approach not only accelerates AI processing but also substantially cuts down on power usage and cost, making it ideal for edge applications requiring deep learning tasks like image and voice recognition. The technology supports seamless integration with existing systems, offering superior power savings and better inference latency compared to conventional digital DSP and SRAM/DRAM methods. The memBrain™ product line is continuously evolving, aiming to accommodate larger and more complex neural networks efficiently.
SuperFlash® Technology is built on a proprietary split-gate Flash memory cell that provides a balance of high performance and low power consumption. Introduced in the early 90s, this technology has proven its reliability through its simplicity and endurance. The scalable architecture offers compatibility with standard silicon CMOS, making it an optimal choice for embedded memory applications. With a simplified design that delivers high endurance and excellent data retention, SuperFlash® Technology is particularly beneficial for environments requiring reliability under high temperatures and low failure rates. The technology has been adopted widely by leading foundries and serves various sectors like automotive and IoT applications.
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