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The memBrain™ neuromorphic memory by Silicon Storage Technology is tailor-made for edge-based AI operations, ensuring efficient handling of deep neural network workloads. By transitioning AI processing from the cloud closer to the network edge, memBrain™ addresses the limitations faced by battery-powered and deeply embedded AI devices. It utilizes SuperFlash® technology with specific optimizations aimed at enhancing Vector Matrix Multiplication (VMM), a core requirement in neural network inference processing.\n\n MemBrain™ significantly improves data processing by utilizing an analog compute-in-memory method. It efficiently manages the storage and retrieval of synaptic weights the neural nets require for inference operations. By storing weights within the floating gate structure, memBrain™ offers remarkable reductions in system latency, often surpassing traditional digital processor approaches. The solution practically reduces the dependency on off-chip memory fetches, which typically bottleneck performance.\n\n The memBrain™ architecture allows for vast improvements in power savings and cost efficiency. Designed to outperform traditional DSP and DRAM/SRAM solutions, it offers 10 to 20 times reduction in power consumption. Additionally, the innovative tile-based multiplication and summation characteristics support extensive neural network operations, bolstering its application in the realm of edge-based, low-power AI devices.
SuperFlash® technology is a proprietary memory solution developed by Silicon Storage Technology, renowned for its cost-effective and high-performance capabilities. The technology is rooted in a unique split-gate Flash memory cell design capable of integrating seamlessly into System-on-Chip (SoC) architectures. Since its inception in 1992, SuperFlash® has maintained robust structural integrity and operational efficiency, even within its simplified array design.\n\n The technology provides significant benefits, including low power consumption, compatibility with standard silicon CMOS, and high performance across various technology nodes from 1µm to 110nm. One of its key strengths is the high endurance it offers, withstanding numerous rewrite cycles. Moreover, it ensures excellent data retention with an extremely low failure rate, even under high-temperature conditions, making it ideal for rigorous application demands.\n\n Moreover, SuperFlash® technology's immunity to Stress-induced Leakage Current (SILC) underscores its reliability. Whether in automotive applications, secure smart cards, IoT devices, or AI solutions, this Flash memory technology supports complex control systems and high-endurance data operations, offering a stable and effective memory storage solution.
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