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The 39GHz 1W Power Amplifier is tailored for 5G mmWave applications, boasting significant power efficiency. Fabricated with 0.15um PHEMT technology, this amplifier operates between 38 to 42GHz, delivering 19dB of gain with a third-order intercept point (IP3) of 40dBm. With a power of 31dBm at P-1dB, it's housed in a surface-mount technology (SMT) package, ensuring optimal integration in high-frequency systems.
The 28GHz Pin Diode SP4T Switch is designed to provide high isolation and low insertion loss for RF applications. Operating from 24 to 32GHz, this switch exhibits a loss of 0.8dB while providing isolation greater than 23dB. This switch is engineered using compact design principles suitable for integration into microwave systems requiring multiple signal paths.
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