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TwinBit Gen-1 is a sophisticated embedded memory solution designed for a wide range from 180nm to 55nm process nodes, featuring a memory density that spans from a minimum of 64 bits to a maximum of 512K bits. This IP is ideal for high-endurance applications, offering more than 10,000 program and erase cycles, which makes it a perfect fit for products requiring frequent updates. The technology is implemented within CMOS logic processes without necessitating additional masks or process steps, thereby streamlining its adoption across varied manufacturing nodes. TwinBit Gen-1 is engineered to support low-power and low-voltage operations, making it particularly suitable for IoT devices, microcontroller-based systems, and FPGA configurations where power efficiency is vital. Its wide application scope includes integration into products with field-rewritable firmware and security codes, as well as analog trimming applications. TwinBit Gen-1's built-in test circuits provide a stress-free testing environment, ensuring seamless integration and deployment.
PermSRAM is a dynamic memory macro known for its adaptability and efficiency. It is built on a foundry standard CMOS platform and supports a broad spectrum of process nodes ranging from 180nm to 28nm and beyond. This memory solution offers various functionalities, such as one-time programmable ROM and a pseudo multi-time programmable ROM, featuring a multi-page configuration. The memory sizes available span from 64 bits to 512K bits, integrating a non-rewritable hardware safety lock for the secure storage of critical security codes. PermSRAM is well-regarded for its consistent performance, offering high reliability and yielding stable results in various conditions. This makes it particularly suitable for applications like security code storage, program storage, and analog trimming. The technology is designed to be tamper-resistant, utilizing a charge trap memory mechanism that ensures data security. Furthermore, PermSRAM operates without the need for a charge pump during read operations, simplifying its integration into different systems. Beyond these technical features, PermSRAM includes a built-in self-test circuit, which facilitates stress-free testing procedures. It supports conventional testing equipment and is engineered to perform reliably in automotive-grade environments, even under high temperatures exceeding 150°C. With its minimal silicon area usage and robust security features, PermSRAM is a versatile choice for a wide range of industrial applications.
TwinBit Gen-2 marks an advanced step in NSCore's non-volatile memory offerings, designed for process nodes from 40nm to 22nm and potentially beyond. Like its predecessor, Gen-2 integrates smoothly into existing manufacturing processes without the need for additional masks or process alterations. This IP is enhanced by its use of the novel Pch Schottky Non-Volatile Memory Cell, which is engineered to optimize for ultra-low-power operations. A key attribute of TwinBit Gen-2 is its capacity to support high-density non-volatile memory demands with improved energy efficiency, making it apt for devices where power consumption is pivotal. Its hot carrier injection control via cell bias, paired with its unique memory cell configuration, facilitates versatile memory operations that are fundamental in modern CMOS technology. Applications for TwinBit Gen-2 encompass high-demand fields such as embedded system design and battery-sensitive environments. Its streamlined design and process adaptation capabilities maintain NSCore's commitment to delivering state-of-the-art memory technologies that meet stringent energy and performance standards.
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