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TwinBit Gen-1 represents an advanced non-volatile memory solution that is embedded within logic-based semiconductor designs, adapting seamlessly to CMOS logic processes without necessitating additional masks or process steps. This IP supports a range of process nodes from 180nm to 55nm, demonstrating high endurance through over 10,000 program and erase cycles. The memory solution excels in flexibility and efficiency, providing a sizeable range of memory density from 64 bits to 512K bits. Particularly beneficial for applications like analog trimming, security key storage, and system switches for ASIC and ASSP, it helps reduce manufacturing costs while maintaining compatibility with modern semiconductors. TwinBit Gen-1's remarkable features also include low-voltage, low-power operations, complemented by an automotive grade under AEC-Q100 conditions. Additionally, this technology's built-in test circuits streamline stress-free test environments, ensuring its integration doesn't hamper production. Compared to other technologies such as eFuses, TwinBit Gen-1 saves silicon area and simplifies test procedures without sacrificing operational capacity. Its design is particularly poised for embedded applications needing secure reprogrammable memory.
PermSRAM is a versatile non-volatile memory solution integrated into foundry standard CMOS platforms accommodating process nodes from 180nm to 22nm and beyond. This memory technology offers various functionalities, such as one-time programmable ROM and pseudo multi-time PROM, which feature a multi-page configuration spread across memory sizes from 64 bits to 512K bits. A notable aspect of PermSRAM is its non-rewritable hardware safety lock that ensures the secure storage of critical security codes. In addition to its security features, PermSRAM delivers high reliability and a stable yield, making it suitable for automotive applications that require data retention at temperatures exceeding 150 degrees Celsius. This memory type is designed for seamless integration with existing system infrastructures as it doesn't need additional read operation circuitry like charge pumps. Its built-in self-test circuit is pivotal for supporting stress-free testing environments, ensuring ease of implementation in various applications like DRM and HDMI decoding, security code storage, and program storage. The benefits of PermSRAM extend to a smaller silicon footprint, achieved through a tamper-resistant design mechanism that uses an invisible charge trap memory system. This compactness is complemented by a fully testable architecture using conventional equipment. PermSRAM beams with capabilities that cater significantly to secure and reliable memory demands, whether for market differentiation or meeting stringent automotive standards.
TwinBit Gen-2 enhances the prior version by supporting more advanced process nodes, spanning from 40nm to 22nm and adapted for further processes. It retains the simplicity of integration found in Gen-1, with no requirement for additional process steps, masks, or auxiliary charges despite its sophistication and efficiency enhancements. This memory technology leverages a newly developed Pch Schottky Non-Volatile Memory Cell that optimizes power consumption for ultra-low-power operations. The tech allows controlled hot carrier injection by cell bias during the program/erase cycle, ensuring the retention and reliability of data throughout its lifecycle. TwinBit Gen-2 thus guarantees a heightened level of operational efficiency for modern electronic devices. Suitable for various memory applications demanding high security and low energy consumption, TwinBit Gen-2 is a valuable asset in fields like IoT and other high-volume consumer electronics requiring reprogrammable memory infrastructure. By achieving this balance, TwinBit Gen-2 establishes itself as a leading non-volatile memory solution in the evolving semiconductor market.
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