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NanoSILICON, Inc.

NanoSILICON, Inc., founded in 2010 and located in the vibrant Silicon Valley, has positioned itself as a performance leader in the silicon wafer industry. The company's commitment to quality is underscored by its ISO 9001:2015 certification obtained in 2022, highlighting rigorous quality processes across sales, operations, and quality control. NanoSILICON specializes in accommodating wafer diameters from 50.8mm to 300mm, offering a range of services including the provision of virgin test and prime wafers. The company's distinguishing factor lies in its relentless focus on quality control, targeting cost efficiency without compromising on excellence. As silicon wafers are fundamental to the miniaturization and functioning of modern electronics, their demand has risen significantly since the 1950s. NanoSILICON taps into this burgeoning market by providing high-quality silicon wafers crucial for the semiconductor industry. With around 12 million wafers used annually, the company emphasizes recycling strategies, such as wafer reclaim services, to minimize silicon costs and environmental impact. Their processes ensure rigorous quality control, providing customers with assured quality at competitive pricing. NanoSILICON's reclaim services incorporate advanced polishing and reclaim technologies, ensuring customers receive high-grade silicon substrates at a cost-effective rate. The company strives to form innovative partnerships with its clients, emphasizing unique solutions and consistent product quality. Driven by a mission to be a recognized leader in the silicon wafer market, they focus on operational excellence and exceptional customer service. Practices like their reclaim wafer process are crucial for both customer cost savings and environmental sustainability. NanoSILICON's methods, including chemical processing and mechanical planarization, provide a mirror finish with guaranteed cleanliness, extending the lifecycle of silicon wafers. They represent a forward-thinking approach to silicon wafer management, reflecting their commitment to cost reduction and sustainability. Read more

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Thermal Oxide Processing

Thermal oxide or SiO2 is a pivotal insulating film utilized in semiconductor devices, serving functions as both ‘field oxide’ and ‘gate oxide’. NanoSILICON, Inc. provides robust thermal oxide processing services using silicon wafers oxidized in high-temperature furnaces ranging from 800°C to 1050°C. The process ensures high purity and low defects, leveraging quartz tubes that provide a stable, high-temperature environment to produce high-density, high-breakdown voltage films. The dry oxidation process involves a reaction of silicon with oxygen to form SiO2, characterized by slow growth but resulting in a high-density layer ideal for isolation purposes. Conversely, the wet oxidation process engages steam, enabling rapid growth of the oxide layer even at lower temperatures, suitable for creating thicker oxides. This flexibility ensures that NanoSILICON can cater to a variety of requirements for different semiconductor applications. NanoSILICON ensures batch thickness uniformity and an impressive degree of thickness accuracy within wafers. Their use of equipment such as the Nanometrics 210 guarantees precise measurement and adherence to specific industry standards. This focus on meticulous quality control assures that the thermal oxides produced meet stringent electrical and physical specifications necessary for reliable device performance.

NanoSILICON, Inc.
TSMC
130nm
Analog Filter, Analog Subsystems, Clock Synthesizer, Coder/Decoder, Temperature Sensor
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