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GaN Systems

GaN Systems, a subsidiary of Infineon Technologies, is at the forefront of innovation in the field of gallium nitride (GaN) power semiconductors. The company prides itself on delivering world-class support and tools specifically designed for power system designers. Their broad portfolio of high-performance GaN transistors is trusted for both their reliability and their ability to significantly reduce energy consumption in power systems. These products are making substantial contributions to various sectors, including consumer electronics, renewable energy, data centers, and automotive solutions, fostering increased energy efficiency. The firm's design center is a vital resource, offering application notes, evaluation kits, circuit simulators, and an extensive partner network to help engineers and companies in integrating GaN technology into their products. By providing these elements, GaN Systems assists in crafting products that tackle some of the world’s economically crucial and environmentally significant challenges, particularly in industries demanding high power efficiency. Moreover, GaN Systems’ dedication to environmental sustainability is evident in their commitment to developing products and systems that decrease system weight and size, while increasing power density and decreasing power loss. Their efforts in advancing GaN technology continue to revolutionize the power semiconductor landscape, portraying a promising future for designs with lower costs and better performance across various applications. The acquisition by Infineon Technologies only strengthens their position as a renowned GaN technology power house, augmenting their capabilities and expanding their reach in the semiconductor industry. Read more

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GS61004B Enhancement Mode GaN Transistor

The GS61004B transistor is an enhancement-mode gallium nitride (GaN) power device that offers superior performance metrics aimed at enhancing energy efficiency. With minimal on-resistance (RDS(on)), this component is suitable for high-frequency switching applications, providing a significant reduction in heat generation compared to silicon-based counterparts. The robustness of the GS61004B makes it a reliable choice for diverse applications in modern electronics. This transistor is designed to operate in circuits requiring minimal electrical losses and can handle substantial power loads, making it ideal for consumer electronics that demand consistent performance and durability. Its compact dimensions also allow for integration into smaller spaces, facilitating more efficient designs without sacrificing power capabilities. Engineers will appreciate the performance advantages provided by its negligible gate charge (QG), ensuring rapid switching and reducing transition losses. Additionally, the GS61004B can significantly improve system-level performance due to its enhanced thermal properties, supporting designs where cooling is a critical factor in maintaining operational stability and longevity.

GaN Systems
Power Management
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