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The LEE Flash G1 is a highly cost-effective Flash memory solution, leveraging SONOS technology. Designed to support harsh automotive environments, this memory IP is scalable down to 40nm technology. It is ideal for applications necessitating medium memory capacity, providing long retention life and low power operation. This Flash memory solution requires only two to three additional masks, showcasing its compatibility with standard CMOS processes without altering the characteristics of logic transistors. Its short testing and bake time further reduce chip costs, facilitating low-cost implementation for various applications. LEE Flash G1’s efficiency extends to its program and erase operations, utilizing Fowler Nordheim tunneling to minimize power consumption dramatically. This technology ensures smooth integration into existing design frameworks, offering extended data retention and high-temperature resilience.
The LEE Flash G2 builds upon its predecessor, offering a Flash solution that harmoniously combines with logic circuits while minimizing costs and power consumption. It's based on a simple SONOS memory cell structure, allowing seamless integration with standard logic, thus converting volatile SRAM circuits into non-volatile versions. This innovation removes the need for isolation areas and additional high voltage requirements during read operations, enhancing layout flexibility and power efficiency. Capable of supporting large memory capacities up to a few Megabytes, LEE Flash G2 stands out for its compatibility with existing CMOS processes and its ability to maintain performance without altering design characteristics. The G2 utilizes a very low power Fowler-Nordheim tunneling mechanism, ensuring minimal current consumption during programming and erasing, which leads to significantly reduced testing time and expenses. Its architecture is particularly advantageous in automotive applications requiring high-temperature operations and long data retention periods.
The LEE Fuse ZA is a specialized Anti-Fuse memory solution, optimized for one-time programming needs such as memory redundancy and trimming applications. Its design philosophy embraces ease of implementation and cost effectiveness, requiring no additional masks or process steps beyond standard CMOS workflows. With capabilities extending from advanced nodes of sub-10nm to more classic 180nm processes, this memory is versatile across various technology scales. The LEE Fuse ZA stands out due to its high-temperature and long data retention attributes, aligned with the demands of automotive-grade applications. Its efficient design supports widespread application opportunities, enabling manufacturers to integrate this technology into existing systems without significant architectural overhaul. LEE Fuse ZA addresses critical memory needs while maintaining cost efficiency and reliability in challenging environments.
The LEE Flash ZT is crafted for trimming and parameter storage, especially focusing on automotive and analog IC applications. It boasts a Zero Additional Mask technology, requiring no new process steps, thus ensuring ease of implementation and significantly reduced cost. Operating efficiently in harsh environments, the ZT memory supports a wide temperature range and long retention life. It utilizes FN tunneling to achieve exceptionally low power consumption, which greatly shortens testing time and therefore contributes to cost savings. Flexible and robust, the LEE Flash ZT is compatible with standard CMOS processes, allowing existing design and IP reuse. This makes it an optimal solution for applications seeking minimal disruption in existing manufacturing workflows while requiring durable memory solutions for critical settings.
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