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Toggle MRAM is designed to provide a simple yet high-density non-volatile memory solution utilizing a 1-transistor, 1-MTJ cell. Everspin's patented Toggle cell design offers robust data retention for over two decades even under elevated temperatures, effectively combining speed and non-volatility in a single device. The technology stands out by delivering unlimited endurance without the wear-out typical of traditional non-volatile memories. During read operations, the pass transistor is activated to facilitate the resistance comparison of the cell with a reference. For write processes, dual write lines generate a magnetic field that alters the cell at their intersection without affecting adjacent cells. This robust architectural choice renders it suitable for applications requiring high reliability and speed. Toggle MRAM's architecture ensures that data is always available instantly, providing power-loss protection and instant-on capabilities pivotal for numerous electronic systems. With a combination of magnetic material and silicon circuitry, it merges the rapid response of SRAM and the reliability of flash memory, ideal for modern computing needs.
Everspin's xSPI products are transforming memory solutions with their industrial STT MRAM, compliant with the latest JEDEC standards. The xSPI family introduces a high-performance, multi-I/O interface equipped for SPI compatibility, designed to operate with a 1.8V power supply, facilitating up to 400MBps read and write speeds. This versatility positions it as an ideal replacement for existing devices like SRAM, NOR, and NVSRAM, with applications spanning Industrial Automation, Process Control, and more. Featuring both Octal and Quad interface options, xSPI devices provide expansive capacities ranging from 4Mb to 128Mb, catering to diverse memory demands within the IoT and other embedded systems. This expanded SPI standard ensures higher data transfer rates, supporting rapid industrial growth. Configurations include advanced evaluation boards compatible with multiple FPGA systems, simplifying integration and performance testing for developers. The products are not just known for their speed and reliability but also for their ability to handle versatile computing conditions efficiently.
Spin-transfer Torque MRAM (STT-MRAM) from Everspin employs the unique property of spin-transfer torque to set the desired magnetic state in the memory cell. This advancement allows for significantly reduced switching energy compared to toggle MRAM, thus achieving higher memory density in a scalable manner. Everspin's STT-MRAM is built with a perpendicular magnetic tunnel junction (MTJ), featuring high magnetic anisotropy for superior data retention. With STT-MRAM, writing data entails directing a polarizing current through the MTJ, which adjusts the magnetic state of the free layer. When aligned with the fixed layer, the MTJ is in a low resistance state, and when anti-aligned, it presents high resistance. This configuration equates to a binary bit cell state of logic one or zero, providing efficient data processing capabilities. Delivering JEDEC standard-like DDR4 interface features, this technology seamlessly integrates with data centers and enterprise storage, offering persistent memory with exceptional endurance and extended temperature operation ranges. It's refined to serve both Industrial IoT and embedded systems, utilizing the new xSPI interface for high-speed data transfers with reduced pin requirements.
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