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Everspin's Toggle MRAM stands as a leading non-volatile memory solution, emphasizing simplicity and reliability. It utilizes a one transistor, one magnetic tunnel junction cell design, ensuring high durability and data integrity over 20 years. The patented Toggle MRAM cell employs a magnetic tunnel junction (MTJ) composed of a fixed magnetic layer, a dielectric tunnel barrier, and a free magnetic layer. This architecture allows data to be stored in a manner that combines the endurance of SRAM with the long-term reliability of Flash.\n\nToggle MRAM is fundamentally different from traditional volatile memory technologies. During read processes, the device activates the pass transistor, comparing the cell's resistance to a reference device to retrieve data, while write operations are conducted through magnetic field interactions, ensuring precision without disturbing adjacent cells. This unique setup offers 'instant-on' capabilities, providing reliable operation across a wide temperature range.\n\nThis technology is not only valued for its high performance but also for its versatility. With applications spanning from industrial control systems to consumer electronics, Toggle MRAM ensures data preservation in power-loss scenarios, offering a robust solution for increasing electronic system demands.
Everspin's Parallel Interface MRAM offers a robust solution for environments demanding high-speed data access with non-volatility. This MRAM is SRAM-compatible, ensuring seamless integration with existing systems. With access timings as swift as 35ns, it stands out for its rapid response time and ability to endure numerous read/write cycles without degradation.\n\nThis MRAM design ensures data retention for over two decades, even in the absence of power. Through its low-voltage inhibit circuitry, data integrity is guarded by preventing unintended write actions during voltage fluctuations. Its compatibility with an 8-bit/16-bit interface further enhances its adaptability across diverse technological ecosystems.\n\nThe Parallel Interface MRAM is engineered for high reliability in mission-critical applications. Its structure effectively counteracts power loss scenarios, maintaining data integrity and availability. Such features make it ideal for sectors requiring fail-safe operation, including automotive, aerospace, and medical devices.
The Serial Peripheral Interface (SPI) MRAM by Everspin is crafted to meet the needs of applications requiring rapid data transactions with minimal pin usage. This memory solution excels in speed, offering reading and writing operations faster than many parallel MRAMs due to the efficiency of its four data lines in Quad SPI mode.\n\nThis device is encased in a compact 16-pin SOIC package and engineered for low power consumption while maintaining swift data access at 52MB per second. Such capabilities make it suitable for systems requiring efficient space management alongside robust performance, such as industrial computing and embedded system applications.\n\nSPI MRAM is designed for simplicity in integration, supporting both rapid prototyping and long-term deployments in data-intensive environments. Systems such as next-generation RAID controllers and embedded logs benefit from its fast access speeds and non-volatile characteristics, ensuring data retention even during unforeseen power outages.
Everspin's Spin-transfer Torque MRAM (STT-MRAM) represents a leap forward in memory technology, leveraging the spin-transfer torque phenomenon for more efficient magnetic state writing. This technology operates by manipulating electron spin with a polarizing current, making it significantly more power-efficient than traditional Toggle MRAM.\n\nSTT-MRAM utilizes perpendicular magnetic tunnel junctions, enhancing data retention capability and allowing for smaller memory cell size, which is critical for developing higher density memory solutions. These attributes are particularly beneficial for data centers and enterprise storage environments, where reliable and persistent data access is paramount.\n\nThis advanced MRAM variant offers compatibility with DDR interfaces, facilitating easy integration with existing systems. Its high-density memory products maintain industry-leading endurance, making them suitable for continuous high-demand environments such as industrial IoT applications and broader embedded systems. The superior bandwidth for data transfer ensures high-speed processing, a crucial requirement for cutting-edge technological applications.
Everspin's xSPI MRAM is engineered for non-volatile memory applications where performance is crucial. Leveraging the JEDEC standard for expanded SPI interfaces, these devices offer high-speed, multiple I/O compatibility, pushing the boundaries of traditional memory usage in industrial IoT settings. With clock frequencies reaching up to 200 MHz, the devices achieve up to 400MBps for both read and write operations, significantly enhancing data throughput.\n\nThe xSPI MRAM series is suitable for diverse applications including industrial automation, process control, and automotive electronics, where reliability and speed are not negotiable. These memories require a mere 1.8V power supply, promoting energy efficiency while maintaining high performance standards.\n\nThis technology represents a significant shift towards universal memory solutions, effectively replacing older technologies such as SRAM and NvSRAM. The usability in expanded IoT networks and smart industry systems highlights its critical role in the evolving technological landscape.
Everspin's MRAM solutions for radiation-hard markets are specifically crafted to withstand the challenging conditions beyond Earth's atmosphere. Traditional electronic memories suffer from data integrity issues in high-radiation environments, but MRAM provides a robust solution, ensuring data is preserved without power.\n\nLeveraging magnetoresistive properties, this memory type exhibits zero hard errors at high radiation levels, crucial for aerospace and defense applications. As the sole U.S.-based MRAM provider, Everspin manufactures these devices to strict quality standards, ensuring reliability in mission-critical operations.\n\nWith the ability to operate with various CMOS front-end options, their MRAM solutions offer versatility and customization, allowing deployment in both discrete and embedded formats. This adaptability ensures a broad application spectrum, from satellites to military-grade devices, where performance and durability are paramount.
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