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Toggle MRAM is designed using a one transistor, one magnetic tunnel junction (MTJ) memory cell configuration. It leverages a patented Toggle cell design that ensures high reliability and data retention for over 20 years. During operation, the device reads data by comparing the resistance of the MTJ, which can exist in a low or high resistance state. This characteristic provides it with non-volatility akin to flash memory while maintaining the speed associated with SRAM, making it a versatile memory solution for various electronic systems.
The xSPI family is a high-performance device leveraging Everspin's STT MRAM for industrial IoT applications. It features the JEDEC standard xSPI interface, providing high-speed data transfers with low pin count. Operating on a single 1.8V supply, these devices manage up to 400MB/s for read and write operations. They offer a compelling memory solution by replacing traditional SRAM, BBSRAM, and NVSRAM devices while being ideal for sectors such as automotive, process control, and industrial automation.
Spin-transfer Torque MRAM employs STT technology, enabling high-density, scalable memory solutions with substantial reductions in power consumption. This technology uses electron spin polarization to perform write functions, which allows the devices to offer higher endurance and density than traditional Toggle MRAM products. With integration capabilities suited for enterprise-level data centers and complex IoT networks, Everspin's STT-MRAM offers impressive operational stability across extended temperature ranges and is ideal for ensuring data integrity under power loss without backup power systems.
Serial Peripheral Interface (SPI) MRAM from Everspin is optimized for applications requiring efficient data storage with minimal pin usage. The MR10Q010 Quad SPI MRAM offers fast data read and write speeds, reaching up to 52 MB/s, which surpasses many traditional MRAM solutions. This technology is ideal for next-generation applications like RAID controllers and embedded systems requiring quick access and high reliability, providing an optimal balance of performance and simplicity with reduced pin counts and lower power consumption.
Parallel Interface MRAMs of Everspin are designed to be compatible with traditional SRAM interfaces, offering the benefits of non-volatility. These MRAMs are available with 8-bit and 16-bit interfaces and are characterized by access times as quick as 35 nanoseconds. The devices are capable of preserving data for more than 20 years, providing a reliable solution especially where data persistence during power loss is critical. These MRAMs are employed in applications requiring high-speed data storage and retrieval without the wear-leveling issues found in other non-volatile memories.
Everspin's MRAM for radiation-hard environments is specially designed to withstand high-radiation doses and is extensively used in space applications. With the ability to manage over 1Mrad of radiation without a hard error, these MRAM devices excel in environments exposed to cosmic rays and other radiation sources. It provides robust memory solutions for aerospace and defense sectors, ensuring data integrity where it is most critical. Everspin, being the sole MRAM supplier with US manufacturing capabilities, offers both discrete and embedded MRAM solutions to meet the demanding requirements of these sectors.
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