Introduction to GaN-on-Silicon Technology

As the semiconductor industry continues to push the boundaries of power efficiency and high-performance applications, gallium nitride (GaN) has emerged as a key material in the transition toward cutting-edge electronic devices. The latest development from X-FAB Silicon Foundries SE marks a significant step forward in the widespread adoption of GaN technology. Their newly launched GaN-on-silicon foundry services for depletion-mode (dMode) devices are set to transform the semiconductor landscape, particularly in high-power applications.

X-FAB’s Strategic Move

Belgium-based X-FAB, known for its expertise in analog/mixed-signal and specialty manufacturing, has introduced GaN-on-silicon technology as part of their XG035 platform. This initiative is conducted through their 8-inch fab located in Dresden, widely regarded as a hub for semiconductor innovation. More on this can be read in their official release.

The decision to offer GaN-on-silicon services addresses the growing demand across multiple sectors, including automotive, data centers, and renewable energy. The new services leverage X-FAB's decades of experience in high-voltage GaN technology and analog CMOS processing, providing a robust framework for the development and production of advanced semiconductor devices.

Features of XG035 dMode Technology

X-FAB's recently released XG035 dMode platform is opening the doors to a range of applications that were previously beyond the reach of traditional semiconductor technologies. This includes the capability for scalable high-electron mobility transistors (HEMTs) with voltages ranging from 100V to 650V, crucial for power conversion technologies.

Furthermore, the Dresden fab is equipped with tools optimized for thicker GaN-on-silicon wafers, catering to diverse applications such as power supplies, high-frequency rectification, and enhancing energy-efficiency in AI-driven data centers. The reduced resistance (RDS) in the 'on' state, coupled with high-frequency switching capabilities, underscores the efficiency gains available via GaN-on-silicon technology.

Meeting Demand for Power Efficient Devices

The demand for efficient power utilization in technologies such as electric vehicles, AI, and data centers is rapidly expanding. X-FAB's GaN-on-silicon technologies are tailored to address these emerging needs. In sectors like automotive, the need for superior battery performance and faster charging times is paramount, and GaN-on-silicon provides a pathway to achieving these goals.

Additionally, as power requirements for AI systems and data centers grow, the need for efficient power delivery systems becomes pivotal. By providing open-access multi-project wafer (MPW) services, X-FAB lowers entry barriers for fabless companies seeking to prototype and develop new semiconductor products.

Future of GaN-on-Silicon Foundry Services

X-FAB’s decision to enable public access to its MPW shuttle service by late 2025 will significantly alter the semiconductor manufacturing equation. The ability for multiple customers to share a single silicon wafer for fabrication helps in reducing costs and smoothing the transition from design to production.

This strategic move not only positions X-FAB as a key player in the global supply of GaN technology but also provides their customers with enhanced supply chain security and scalability options. For fabless companies, the availability of X-FAB's process design kit (PDK) simplifies the design phase, facilitating faster onboarding and rapid prototyping.

Conclusion

In conclusion, X-FAB’s introduction of GaN-on-silicon foundry services is a significant advancement in the semiconductor IP industry, particularly at a time when power-efficient and scalable semiconductor solutions are in high demand. By leveraging their extensive expertise and state-of-the-art facilities, X-FAB sets a new benchmark in semiconductor manufacturing, paving the way for innovative solutions that meet the demands of the modern world. For more details, refer to the complete news story. This substantial leap forward underscores the company's commitment to driving progress in semiconductor technology.