An Overview of the SiC Power Device Innovation Landscape

In recent years, Silicon Carbide (SiC) technology has emerged as a pivotal component in the advancement of power electronics. Notably, the first quarter of 2025 witnessed an unparalleled surge in patent filings in this domain, underscoring both rising interest and innovation. According to KnowMade's SiC Patent Monitor, this period saw over 840 new patent families filed globally, with Toshiba and China's Global Power Technology leading the charge.

A Closer Look at Patent Dominance

Toshiba and Global Power Technology have established themselves as frontrunners in the SiC patent landscape, collectively matching each other with a high volume of filings. This development reaffirms the strategic prioritization of SiC MOSFET structures by Global Power Technology, a company that continues to be a prolific patent applicant from China. Interestingly, the quarter also observed over 120 patents expiring or being abandoned, highlighting a dynamic and competitive environment.

Moreover, the patent landscape features notable contributions from Japanese enterprises like Denso/Toyota, Fuji Electric, Sumitomo Electric, and Mitsubishi Electric. Global Power Technology’s prominence is attributed to its significant number of utility models registered, indicating a robust approach to securing intellectual property.

Strategic Patent Transfers and Collaborations

The quarter was also significant for patent reassignments, especially following the acquisition of United Silicon Carbide by onsemi, leading to several patents transferring from Qorvo. Further collaboration in the industry is evident through national partnerships, predominantly between research institutions and domestic companies. A standout alliance is the Nissan-Renault collaboration aiming to enhance the reliability of trench SiC MOSFETs, a demonstration of cross-border synergy.

Innovations Across the SiC Supply Chain

Innovative strides from companies like SICC have led to advancements in SiC substrate quality through new patent submissions. SICC and other players are determined to push the envelope by achieving more uniform stress distribution across SiC wafers, vital for high-performance power devices.

Microchip Technology has renewed its focus on patenting activities with fresh inventions concerning SiC/Si hybrid channel MOSFETs. Concurrently, Purdue University unveiled a new SiC MOS-based device boasting reduced on-resistance levels, set to influence efficiency standards.

The Push Towards Next-Gen SiC Devices

The evolution of SiC technology is further demonstrated by emerging patent applications for next-gen SiC devices like superjunction structures and SiC IGBTs. Companies such as Rohm, Hitachi, and GlobalFoundries are at the forefront of these technological advancements, pursuing innovations like semi-insulating SiC substrates for medium voltage applications.

Market Implications and Future Prospects

The burgeoning patent landscape reflects a market ripe with potential and diversifying applications. From EV/HEV systems to aerospace and energy storage, SiC devices are becoming integral across various sectors. This trend is being mirrored by increased patenting activities from Chinese research organizations in particular, heralding a new era of technological prowess.

As the SiC patent landscape develops, it is crucial for industry professionals to remain informed. Subscribing to services like KnowMade’s SiC Quarterly Patent Monitor can offer real-time insights into these emerging trends—essential for anyone looking to navigate the competitive IP terrain strategically.

For more in-depth analysis and subscription details, view the full KnowMade article. This resource is designed to guide your strategic decisions in R&D, marketing, and intellectual property management.