Tower Semiconductor, a major player in the analog semiconductor solutions arena, is gearing up to make waves at the upcoming International Microwave Symposium (IMS) 2025. The event, slated to run from June 16 to 21 in San Francisco, California, promises to be a showcase of cutting-edge technology and Tower Semiconductor is stepping up with a highlight on their innovations in RF foundry technology.

Breaking Barriers with RF Switch Technology

Tower Semiconductor's participation is particularly notable this year with the presentation of their latest white paper developed in collaboration with pSemi. This paper, which is a contender for the prestigious Best Industry Paper Award at IMS 2025, introduces a revolutionary single-pole, double-throw (SPDT) switch. The SPDT switch excels in its ultra-wideband capabilities, remarkable for operating from DC up to 110 GHz, and boasting less than 2 dB of insertion loss.

Such advancements in RF technology have been made possible through Tower's PCM RF switches integrated monolithically in an RFSOI CMOS process. The resulting SPDT switch highlights significant improvements in power handling at 30 dBm and a linearity performance that is 15-20 dB superior compared to available RFSOI CMOS SPDT switches. This technological leap not only simplifies implementation but also paves the way for a multitude of applications in 5G, potential 6G developments, satellite communications (SatCom), beamforming, and millimeter-wave technologies.

Integration and Performance

The integration of digital control using a CMOS driver, complete with a MIPI RFFE interface, is another facet of innovation being brought to IMS by Tower. This level of integration implies a substantial ease of incorporation into existing and upcoming technologies. By embedding such functionalities directly into the hardware, Tower ensures a streamlined performance that caters to the stringent needs of modern communication technologies.

With industries pushing towards higher frequencies and broader bandwidths, Tower’s contributions are particularly significant. The movement towards frequencies above millimeter-wave and the increasing demand for larger bandwidths position Tower’s innovations as pivotal.

Industry Implications

The introduction of this SPDT switch marks a new era in RF technology. As industries move towards the future of telecommunications, the demand for smarter, more efficient, and robust solutions grows. Tower’s advances in RF switches not only meet these demands but also set new standards for power, integration, and performance.

Getting to Know Tower's Innovations

For those interested in gaining first-hand insights into Tower Semiconductor’s latest advancements, the company will divulge further details in their presentation titled “A Low-Loss, Wideband, 0-110 GHz SPDT Using PCM RF Switches with Integrated CMOS Drivers.” Dr. Nabil El-Hinnawy, Principal R&D Engineer, will deliver this presentation during the Th1B session focusing on Innovative RF Switches, Varactor, and Modulator Technologies on June 19, 2025, at 8:20 AM in room 205.

Moreover, attendees are encouraged to visit Tower’s engineering team at booth #655 during IMS 2025 to engage with the technology up close and discuss potential applications and implications for future advancements.

To further explore Tower Semiconductor’s RF platform offering and the groundbreaking advancements in RF switch technology, you can visit their official website or the IMS 2025 event page. With IMS 2025 serving as the platform, Tower Semiconductor is undoubtedly setting a high bar in the RF sector, driving innovation and fostering future-ready technologies.