Chip Talk > Infineon Unveils Next-Gen CoolSiC MOSFETs Targeting High-Power Applications
Published September 30, 2025
Infineon's Expansion of the CoolSiC MOSFETs Portfolio
In a significant move to strengthen its position in the semiconductor industry, Infineon Technologies has announced the expansion of its CoolSiC MOSFETs range. This latest upgrade introduces the 400V G2 series, highlighted by the addition of the top-side-cooled (TSC) TOLT package alongside the TO-247-3 and TO-247-4 packages.
The refinement also brings forth three groundbreaking products in the TOLL package with robust voltage ratings of 440V and 455V transient. This introduction is particularly significant for industries reliant on high-power and compute-intensive tasks, such as AI server power supplies, solar inverters, and motor drives.
Infineon's CoolSiC MOSFETs have been crafted to cater to the increasing demand for high-efficiency and higher thermal performance in power electronic solutions. The enhanced thermal dynamics and system efficiency promise substantial improvements across various domains.
Compared to traditional silicon technologies at 250V and 300V, the new 400V and 440V CoolSiC G2 MOSFETs cut conduction losses by up to 50% at an operational temperature of 120°C. The hallmark feature ensuring this significant enhancement is the flat R(DS(on) as a function of junction temperature (Tj), a metric that sets a new benchmark for switching figures of merit in the industry.
One of the most notable aspects of this revolutionary series is its impact on power supply units (PSUs). When integrated into a three-stage flying-capacitor continuous conduction mode (CCM) totem-pole power factor correction (PFC), the new MOSFETs achieve 0.4 percentage points higher peak PSU efficiency compared to traditional state-of-the-art interleaved two-level systems.
This leap in efficiency equates to an impressive reduction in system losses, quantified at approximately 15% at peak operational efficiencies. Such metrics not only lower energy consumption but also extend the longevity and reliability of electronic systems.
This development underscores Infineon's commitment to leveraging silicon carbide (SiC) technology to advance power electronics. The distinctive characteristics of SiC, such as high thermal conductivity and the ability to withstand higher voltages, amplify its competitiveness over silicon alternatives. These attributes foster higher performance and enhanced durability in demanding environments.
By enhancing their portfolio with the new CoolSiC MOSFETs, Infineon not only broadens its market reach but also fortifies its competitive edge in the power electronics sector.
As the demand for efficient power solutions continues to surge, Infineon's CoolSiC MOSFETs are poised to play a critical role. By expanding the capabilities of power electronics across various high-power applications, these innovative products ensure that Infineon remains at the cutting edge of semiconductor technology.
For engineers and industry professionals, the introduction of these new components offers a suite of opportunities to enhance existing systems and develop innovative solutions that cater to the growing demands of modern technologies. Infineon's exploration of high-performance materials like SiC is a testament to its forward-thinking approach and strategic focus on long-term sustainability in the semiconductor industry.
For more details, refer to the original article covering Infineon's latest enhancements in their CoolSiC MOSFETs lineup.
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