Chip Talk > Infineon's Next-Gen SiC: A Leap Forward in Power Efficiency
Published May 08, 2025
In the ever-evolving world of semiconductors, Infineon stands out with its introduction of trench-based silicon carbide (SiC) superjunction technology. This innovation marks a significant leap in power density and efficiency, targeting automotive and industrial applications. The new trench superjunction (TSJ) technology ushers in a new era for SiC technology, pushing the boundaries of what's possible in power electronics.
The existing CoolSiC portfolio by Infineon spans a wide range, from 400 V to 3.3 kV, and now, with the addition of TSJ technology, it's set to cover even more ground. According to Infineon, this expansion will be inclusive of various package types such as discretes, molded and frame-based modules, and bare dies. The move is designed to cater to a wide array of applications, enhancing reliability and performance across sectors.
The combination of trench and superjunction technology allows for more compact designs—a crucial factor for applications requiring high levels of performance and reliability. The 1200 V products, in particular, aim to revolutionize automotive traction inverters. By leveraging more than 25 years of expertise in SiC and silicon-based superjunction technology, Infineon is poised to set new standards in energy efficiency.
Key benefits of the technology include improved power density through a 40% enhancement in RDS(on)*A, supporting more compact power classes. This is accompanied by up to a 25% increase in current capability in main inverters, without compromising on short-circuit capability.
Infineon’s new offerings are not just theoretical improvements. They are tailored for real-world applications that demand robust performance, such as electric vehicle (EV) drivetrains. Hyundai Motor Company is one of the early adopters, making use of Infineon's technology to enhance their electric vehicle offerings. This collaboration is expected to drive the development of more efficient and compact EV drivetrains, which are set to benefit from reduced cooling requirements and improved energy efficiency.
Infineon's advancement with SiC TSJ technology is not merely a technological upgrade; it's a sign of the growing emphasis on sustainable and efficient power solutions in the semiconductor industry. Scheduled for volume production by 2027, this technology is expected to catalyze change across various sectors.
The impact on the automotive sector is especially profound, with enhanced drivetrains contributing to the efficiency and reliability of electric vehicles. As a result, this could accelerate the adoption of EVs globally. For industrial applications, the technology promises enhanced performance and reduced system costs, potentially leading to broader advancements in smart manufacturing and automation technologies.
In conclusion, Infineon's trench-based SiC superjunction technology represents a significant stride in semiconductor innovation. It not only broadens the capabilities of existing platforms but also sets the stage for the next generation of energy-efficient applications, underscoring Infineon’s role as a leader in semiconductor technology. For further details, check this source.
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