Belgium’s imec, one of the world’s leading semiconductor R&D hubs, has officially launched a 300mm gallium nitride (GaN) technology program, signaling a major leap forward for wide-bandgap (WBG) semiconductor integration.

The initiative brings together a powerful coalition of partners — AIXTRON, GlobalFoundries, KLA, Synopsys, and Veeco — each contributing unique expertise across epitaxy, manufacturing, metrology, and EDA tools.

This program aims to scale GaN technology from 200mm to 300mm wafers, lowering cost barriers and paving the way for next-generation power electronics and RF applications across computing, automotive, and datacenter markets.

⚡ Why 300mm GaN Matters

GaN, a III/V compound of gallium and nitrogen, has long been recognized for its wide bandgap (3.4 eV) — much higher than silicon’s 1.1 eV and slightly above silicon carbide’s 3.3 eV.

This property allows higher voltage tolerance, faster switching speeds, and better efficiency, making GaN a prime candidate for compact, high-power systems.

Traditionally, GaN chips have been fabricated on 200mm or smaller wafers, with production challenges tied to substrate cost and wafer bowing. By moving to 300mm, imec and its partners seek to:

1. Reduce cost per die through higher wafer throughput
2. Leverage CMOS-compatible tools already established for silicon
3. Enable co-integration with digital logic and controllers
4. Accelerate commercialization for both low- and high-voltage GaN devices

🧩 Inside imec’s 300mm GaN Program

The 300mm program sits within imec’s Industrial Affiliation Program (IIAP) on GaN power electronics. Its technical roadmap includes:

1. Low-Voltage Platform (100 V and beyond)
2. Development of a baseline lateral p-GaN HEMT technology on 300mm silicon substrates
3. Process optimization for p-GaN etch and Ohmic contact formation
4. High-Voltage Platform (650 V and above)
5. Integration using CMOS-compatible QST-engineered substrates (with poly-crystalline AlN core)
6. Focus on bow control and mechanical strength for 300mm wafers

The target: establish a fully functional 300mm GaN flow by late 2025, leveraging imec’s existing 300mm cleanroom infrastructure.

This evolution parallels imec’s broader mission — bridging advanced materials and manufacturability, ensuring Europe remains at the forefront of semiconductor innovation.

🌍 The Strategic Significance

The implications of this move stretch well beyond Belgium’s borders:

1. For GlobalFoundries: It opens the door to next-gen GaN foundry offerings, strengthening its position against TSMC and Infineon in power and RF segments.
2. For AIXTRON and Veeco: The partnership reinforces their leadership in GaN epitaxy equipment, now tailored for 300mm scalability.
3. For Synopsys and KLA: Their participation bridges design and metrology, critical for yield ramp and process control.
4. For the ecosystem: This collaboration reduces fragmentation and creates a standardized 300mm GaN process reference, potentially catalyzing commercial adoption across data centers, EV chargers, and AI power delivery systems.

In short, imec’s initiative could do for GaN what 300mm scaling did for silicon 20 years ago — unlock the economics of mass production and enable new performance classes.

👥 Leadership Transition at imec

Adding to the momentum, imec announced that Patrick Vandenameele will succeed Luc Van den hove as CEO on April 1, 2026.

Vandenameele, currently EVP and Co-COO, has been instrumental in shaping imec’s R&D strategy since 2021.

Van den hove will move to the role of Chair of imec’s Board, ensuring continuity of vision as imec expands its leadership in advanced materials and semiconductor scaling.

🔍 Why It Matters

Imec’s 300mm GaN initiative marks a critical inflection point for wide-bandgap semiconductors.

The convergence of GaN efficiency, 300mm manufacturability, and multi-partner collaboration could accelerate adoption across high-density compute, automotive, and renewable-energy systems.

In a world demanding more power, less loss, and smaller form factors, imec’s 300mm GaN program may become the blueprint for the next decade of power electronics.

Sources

1. imec Industrial Affiliation Program (IIAP) materials
2. PowerAmerica Consortium — Wide Bandgap Semiconductor Overview
3. Company announcements from AIXTRON, GlobalFoundries, KLA, Synopsys, and Veeco