Chip Talk > Fraunhofer IAF Unveils Revolutionary 1200V GaN Switch for Electric Vehicles
The electric vehicle (EV) market is on the cusp of a breakthrough as Fraunhofer Institute for Applied Solid State Physics IAF introduces its groundbreaking 1200V gallium nitride (GaN) bidirectional switch. This innovation, presented at the Power Electronics, Intelligent Motion, Renewable Energy, and Energy Management (PCIM) 2025 Expo in Nuremberg, holds the potential to significantly enhance the efficiency and usability of future EVs.
According to Fraunhofer IAF's announcement, the development was part of the GaN4EmoBiL project, a strategic initiative supported by the German Federal Ministry for Economic Affairs and Climate Action. The project's objective is to push the boundaries of GaN power semiconductors to support the burgeoning field of electro-mobility.
The 1200V monolithic bidirectional switch (MBDS) is a marvel of engineering, integrating two free-wheeling diodes within a single package. This reduces component count and leads to lower conduction losses, thanks to its ability to block voltage and conduct current bidirectionally. The technology leverages GaN-on-insulator fabrication techniques that employ substrates like silicon carbide (SiC) and sapphire to enhance insulation and enable higher breakdown voltages.
This device is particularly valuable in grid-connected power converters which are crucial for efficient energy generation and storage. The MBDS's ability to function in the 1200V class opens new possibilities for the development of high-performance electric drive systems.
Currently, the EV market primarily sees 400V systems, with 800V technology emerging as a strong contender. However, the introduction of 1200V systems, facilitated by Fraunhofer IAF’s advancements, promises to revolutionize the sector. With higher blocking voltages, energy losses are minimized while charging powers are boosted, enhancing the range and utility of EVs, including trucks.
The leap to 1200V technology offers noted advantages in terms of charging speed, operational efficiency, and vehicle range, effectively broadening the scope of what electric vehicles can achieve on the road.
At PCIM 2025, Fraunhofer IAF is not only highlighting the 1200V MBDS, but also showcasing its extensive GaN-based power electronics portfolio. The range includes voltage classes spanning 48V to 1200V, with ongoing research aiming at the 1700V class.
Among the innovations are lateral and vertical components, as well as integrated GaN power ICs and modules. Fraunhofer IAF is also committed to the development of highly insulating substrates, enhancing the performance of their power electronics across various applications.
At the conference, experts like Dr. Michael Basler and Dr. Richard Reiner will further elucidate these innovations, emphasizing progressions in lateral and vertical GaN devices and power ICs.
The unveiling of this 1200V MBDS sets a promising precedent for the future of GaN technology in power electronics, particularly for applications in electro-mobility. As the demand for more efficient, scalable, and high-capacity systems grows, technologies like Fraunhofer IAF’s will play pivotal roles in reshaping landscapes across industries.
For more detailed insights and discussions on these exciting advancements, visit the original Fraunhofer IAF news release.
Published April 30, 2025
