Altum RF's Showstopper Presence at IMS 2025

In the buzzing enclave of San Francisco's Moscone Center, the IEEE MTT-S International Microwave Symposium (IMS 2025) took the spotlight. Among the notable participants is Altum RF, a Netherlands-based entity renowned for its cutting-edge designs in RF, microwave, and millimeter-wave semiconductors. As enthusiasts gather at booth #966, Altum RF seizes the opportunity to flaunt its latest innovations, which are poised to redefine the landscape of mmWave telecom and SATCOM applications [^source1].

Pioneering E-Band Power Amplifiers

Central to Altum RF's showcase are their innovative E-band power amplifiers and low-noise amplifiers. These components are meticulously engineered to cater to the rigorous demands of mmWave communications systems. The E-band spectrum, spanning 71-76 GHz and 81-86 GHz, is pivotal for next-gen telecom and SATCOM operations, enabling high-capacity data transfers over extended ranges. Altum RF addresses these needs with products like the ARF1018 and ARF1019 power amplifiers, boasting Psat outputs of 1.8W and 1.6W, respectively [^source1]. Such output ensures robust link quality, a necessity for the expanding horizons of high-speed data communication.

Technical Highlights and Market Application

Altum RF's expertise isn't confined to power amplifiers. Their portfolio extends to components with varied frequency ranges and functionalities:

• ARF1206: A low-noise amplifier proficient from 71 to 86 GHz, featuring an impressive noise figure of 2.5-3.5dB, crucial for SATCOM where signal clarity is paramount.
• ARF1303: This distributed amplifier covers DC-60 GHz, ensuring a significant gain of 15dB and achieves an output Psat of 24dBm. Such attributes make it ideal for radar and test & measurement markets.
• ARF1020Q5: Targeting the X-band spectrum (9-11 GHz), it delivers a powerful 42dBm Psat, ideal for military and weather radar applications [^source1].

The Role of GaAs and GaN Technologies

Driving these innovations are the semiconductor materials gallium arsenide (GaAs) and gallium nitride (GaN). Both exhibit superior high-frequency performance and thermal efficiency, making them the backbone of Altum RF's amplifier designs. With over 40+ MMICs (monolithic microwave integrated circuits) incorporating these materials, Altum RF highlights their commitment to leveraging advanced technology to sustain competitive advantages.

Altum RF's Strategic Developments

Beyond product offerings, Altum RF continues to evolve its strategic footprint. The recent expansion of their Sydney Design Center underscores their dedication to growth and innovation in RF design [^source2]. Such developments hint at an ambition to solidify global standing while fostering local talent and expertise.

Conclusion

In the rapidly advancing realm of telecommunications and SATCOM, Altum RF's contributions at IMS 2025 demonstrate not only a commitment to leading-edge technology but also a vision for the future of global communications. Their extensive range of amplifiers underscores the potential for faster, clearer connectivity, paving the way for the next frontier in wireless technology.

For more details, visit their website and explore the IMS symposium to witness transformative innovations firsthand.

[^source1]: Altum RF showcasing products and expertise at IMS 2025 [^source2]: Altum RF opens new, larger office for Sydney Design Center