Chip Talk > Boosting Power Efficiency: Renesas' New GaN Innovation for AI Data Centers
Published July 01, 2025
Renesas Electronics Corporation has made headlines with their latest release of 650V GaN FETs tailored for high-density power conversion across AI data centers and other power-hungry systems. This groundbreaking innovation marks a significant leap in efficiency and design simplicity, leveraging the combined power of advanced Gallium Nitride (GaN) technology and silicon-compatible gate drive inputs.
The newly launched TP65H030G4P series offers substantial advancements over traditional silicon or Silicon Carbide (SiC) alternatives. With options in TOLT, TO-247, and TOLL packages, it grants engineers the flexibility to customize and optimize their designs for specific power architectures from 1kW upwards to 10kW and even higher with parallel configurations.
The devices integrate a robust SuperGaN® platform, a noteworthy achievement from Renesas’ acquisition of Transphorm. This acquisition has accelerated advancements in GaN by refining d-mode architectures that promise seamless, reliable performance.
GaN technology is swiftly replacing conventional semiconductor switches, particularly as systems demand higher efficiency and reduced footprint for applications like electric vehicles (EVs), AI servers, and renewable energy systems. The Gen IV Plus products from Renesas illustrate this shift, pushing efficiency upward whilst maintaining ease of use. Renesas has developed these GaN FETs to minimize power loss effectively, utilizing lower gate charge, output capacitance, and improved dynamic resistance.
Featuring a significant reduction in RDS(on) down to 30 milliohms, the Gen IV Plus portfolio boasts higher efficiency in a smaller die size, reducing costs and enhancing power density. These characteristics highlight the devices’ aptitude in thermally demanding environments, a critical consideration for data centers and industrial sectors striving for sustainability through technology.
One compelling aspect is the SuperGaN’s silicon-compatible gate, simplifying the adaptation for system developers and eliminating the need for specialized drivers. This functionality underscores Renesas' commitment to easing the engineering process, ensuring minimal friction in the transition to GaN solutions.
The release aligns with Renesas' overarching strategy to blend high and low-power GaN FETs, addressing broader customer requirements and real-world applications. With over 20 million GaN devices hitting the market, Renesas is not only innovating but also leading the charge to scalable, efficient power solutions.
Renesas’ recent GaN FET release underlines a pivotal step towards highly efficient, reliable, and environmentally sustainable power solutions. As the semiconductor industry evolves, the deployment of such advanced GaN technology reaffirms Renesas' position in the forefront of power electronics and smart systems design across diverse applications. For further insights into Renesas' innovations and full specifications of their cutting-edge GaN portfolio, visit their official product page.
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