Chip Talk
Find out what's new on Silicon Hub, and discover helpful tutorials and articles to get more from your IP!
Find out what's new on Silicon Hub, and discover helpful tutorials and articles to get more from your IP!
As the demand for high-resolution imaging, low-power displays, and advanced edge processing continues to grow, SoC designers are under increasing pressure to deliver robust connectivity solutions without sacrificing performance or power efficiency. In this context, Mixel’s recent announcement is a strategic milestone—not just for the company, but for the entire embedded and edge semiconductor ecosystem.
Mixel has successfully validated its MIPI C-PHY/D-PHY Combo IP on STMicroelectronics’ 40nm Low-Power (40LP) process, a widely adopted node for automotive, IoT, medical, and industrial applications. This integration creates a compelling offering for semiconductor designers building camera and display-intensive systems.
Mixel’s combo IP supports both MIPI C-PHY v2.0 and MIPI D-PHY v1.2, making it a versatile solution for a wide array of applications. This dual compatibility provides flexibility to system architects and SoC designers by:
For customers working on heterogeneous product portfolios—ranging from smart cameras to industrial displays—this flexibility translates into faster time-to-market and reduced development cost.
The validated IP achieves data rates of:
These performance levels make the combo IP suitable for bandwidth-intensive applications like:
The ability to reach such speeds on the 40LP node, which is favored for its cost-effectiveness and low leakage characteristics, adds even more value for designers aiming at mass-market or power-sensitive segments.
This validation offers a robust and silicon-proven IP path for those targeting ST’s 40nm platform. It simplifies IP sourcing, reduces design risk, and enables a faster path to silicon for products requiring MIPI interfaces.
This move strengthens Mixel’s leadership in the MIPI IP space, reaffirming its commitment to providing interface IP on mainstream and emerging process nodes. It also enhances the value of ST’s 40LP technology platform by enabling high-speed connectivity—an increasingly critical feature in modern SoCs.
End-product manufacturers stand to benefit from better system integration, extended component interoperability, and more scalable design options—particularly in sectors where both D-PHY and C-PHY devices coexist.
As imaging, sensing, and display technologies continue to advance in edge and embedded applications, connectivity IP will play a decisive role in enabling new user experiences. Mixel’s MIPI C-PHY/D-PHY Combo IP on ST’s 40LP is a clear example of how collaborative IP development and process optimization can drive meaningful innovation—without needing to move to bleeding-edge nodes.
This validation isn't just about speeds and specs—it's about enabling the next generation of intelligent systems to be smaller, faster, and more power efficient.
🔗 Learn more: https://mixel.com/mixel-mipi-c-phy-d-phy-combo-ip-stmicroelectronics-40lp/
#Mixel #STMicroelectronics #MIPI #CPHY #DPHY #SemiconductorIP #SoCDesign #EdgeAI #AutomotiveElectronics #IoTDesign #DisplayTechnology #CameraInterface #LowPowerChips #ChipDesign
In an era marked by shifting global trade policies and mounting tariff pressures, Samsung Electronics finds itself at a strategic crossroads. As reported by Yonhap News, Samsung is weighing significant adjustments in both its sales focus and production arrangements to cushion the impact of potential tariff increases.
Samsung's response to these challenges appears multifaceted. Senior executives have suggested a pivot towards expanding sales of high-end products, a move geared towards safeguarding profit margins. This strategic pivot reflects the firm's understanding that flagship and edge devices offer the potential for higher profitability margins. By focusing on premium lines in its MX (Mobile Experience), VD (Video Display), and DA (Digital Appliances) divisions, Samsung hopes to mitigate potential cost surges due to chip-related tariff hikes.
Amid rising costs and trade barriers, Samsung is considering realigning its production footprint. The company's reliance on countries like Vietnam and India for smartphone manufacturing – both of which face heightened tariff threats – prompts consideration of alternative sites such as Brazil, which offers comparatively lower tariff rates.
With a current concentration of smartphone manufacturing facilities in Vietnam (46% tariff rate) and India (26% tariff rate), the strategic shift to Brazil could not only optimize tariffs but also leverage Brazil's growing industrial capabilities. As tariffs in these critical production hubs become a pressing concern, moving certain operations to jurisdictions with favorable trade policies is becoming a sound strategy.
In the DS (Device Solutions) division, another area of concern is the potential dampening of memory demand in the latter half of the year. The prospect of tariffs and export controls specifically impacting AI chip exports to the U.S. is top of mind. According to Yonhap, some customers are accelerating their orders in anticipation of future cost increases, potentially leading to a market softness ahead.
The company's memory business division, led by Jae-jun Kim, is particularly vigilant, as these trade developments unfold. With an eye on the U.S. tariff landscape, Samsung is poised to adapt its market strategies and reinforce its U.S. commitments, including the progression of its Taylor plant in Texas slated for a 2026 launch.
Samsung's scenario exemplifies the intricate dance multinational corporations must engage in within the evolving global trade environment. Balancing production and sales strategies while maintaining a keen eye on geopolitical shifts is critical. By fostering resilience through diversification of production sites and bolstering premium product lines, Samsung is strategically positioning itself to navigate these turbulent waters.
As the semiconductor market continues to face uncertainties, companies like Samsung must remain agile, continually assessing their operational moves to safeguard their market positions while nurturing core innovations. For industry observers and stakeholders, Samsung's roadmap offers key insights into managing supply chain vulnerabilities amid global economic fluctuations.
In the rapidly evolving spheres of battery technology and semiconductor equipment, innovation is the golden key. Forge Nano, Inc. has raised $40 million in new funding, backed by notable investors such as RockCreek and Ascent Funds. This latest capital influx brings Forge Nano's total investment to over $140 million, setting the stage for transformative growth in the U.S.'s advanced manufacturing sector.
For those keen on the intricate workings of semiconductor innovations, this is significant news. Read more about Forge Nano's funding here.
The innovative edge that Forge Nano brings to battery production is embodied by its subsidiary, Forge Battery. Their lithium-ion batteries, enriched with their proprietary Atomic Armor technology, boast industry-leading energy density. Further, Forge Battery embraces a predominantly U.S.-based supply chain, emphasizing a resilient and secure manufacturing process.
This investment follows an impressive $100 million award from the U.S. Department of Energy, received in 2025, showcasing the confidence in Forge Nano's capacity to bolster U.S. manufacturing Read about the Department of Energy grant.
Meanwhile, the semiconductor sphere is witnessing game-changing advancements with Forge Nano's TEPHRA™ platform - a single-wafer ALD coating tool that optimizes chip performance and energy efficiency. This tool offers a breathtaking 40% improvement in processing speeds and a 50% reduction in power consumption, making it indispensable for producing efficient devices, sensors, and AI computing technologies.
TEPHRA™ not only improves chip performance but also strengthens America's domestic semiconductor capabilities. It’s compelling to think that a single technology could remove bottlenecks to 3D chip stacking, which can significantly boost processing efficiency. To dive into the intricate details of the TEPHRA™ platform, visit Forge Nano's ALD solutions.
As Paul Lichty, CEO of Forge Nano, notes, this funding is not just about innovation. It's about reaffirming the U.S. as a leader in energy security and technology innovation. The company's Atomic Armor technology in batteries promises not just higher energy density but also improved cycle life and faster charging speeds.
For those working within the semiconductor IP industry, Forge Nano's vision is promising and signals a shift towards more efficient, reliable, and high-performance technology solutions. This expansion is about positioning the U.S. to lead in AI and edge computing solutions, enhancing success in both defense and commercial applications.
The infusion of funds for Forge Nano is more than just financial growth. It’s emblematic of a broader trend towards innovation-driven markets where the intersection of battery technology and semiconductors plays a crucial role. Explore more details on Forge Nano's latest innovations and stay tuned as they continue to challenge norms and push boundaries.
As these advances unfold, keeping an eye on their trajectory in the market will be essential for anyone invested in the future of semiconductors and sustainable technologies.
Amid geopolitical tensions and supply chain shifts, the European Union (EU) finds itself deeply entrenched in the global semiconductor tug-of-war. A recent European Court of Auditors (ECA) report has underscored a significant concern: the EU’s burgeoning dependency on China for its legacy chips. According to the report, China is currently the primary supplier for one-third of the EU's legacy chips - semiconductors crucial for the automotive and industrial sectors.
The facts laid bare in the ECA’s report, titled "Microchips: EU off the pace in a global race," indicate just how far the EU remains from achieving its ambitious semiconductor goals. The EU aims to capture 20% of the global chip market by 2030, yet as of the last forecast, its market share is expected to rise slightly from 9.8% in 2022 to just 11.7% by 2030, given the current trajectory.
Notably, legacy chips are pivotal for key market sectors such as automotive and green technologies—sectors where Europe has traditionally been a strong player. Despite having industry champions like Germany's Infineon, the Netherlands' NXP, and STMicroelectronics in this segment, the EU's domestic production capability falls short of meeting the surging demand.
The risks of this reliance are exacerbated by geopolitical dynamics. The U.S.'s stringent export controls on China have prompted the latter to pivot aggressively towards the legacy chip market. The EU's dependency signifies potential vulnerabilities, including exposure to supply chain disruptions and political leverage that China could wield.
As the report highlights, this heavy reliance has also contributed to a significant trade imbalance; the EU currently runs a €9.8 billion semiconductor trade deficit with China. This number is poised to grow unless strategic changes are implemented.
In response, the EU launched the European Chips Act in 2022, aiming to revitalize its semiconductor industry. However, the path forward is fraught with challenges—chief among them is funding. As the ECA notes, the EU Commission's contribution of €4.5 billion towards the €86 billion Chips Act budget is a mere fraction of global industry investments.
The lack of sufficient financial backing not only hampers progress but also highlights potential setbacks in meeting the 2030 objectives. Comparisons to the massive investments by global chipmaking giants reveal just how daunting the path to competitiveness is for Europe.
To mitigate these risks, the EU must not only innovate technologically but also create a more conducive investment environment to attract global players. Enhanced partnerships within member states could help bridge the funding gap while creating a sustainable supply chain that gradually reduces the EU's reliance on external markets.
In conclusion, the EU’s legacy chip dependency on China represents both a significant threat and an opportunity for reform. By leveraging policy, investment, and collaboration, Europe could potentially stabilize its supply chains and reinforce its standing in the global semiconductor arena. Understanding the dynamics of this dependency is crucial for policymakers and industry leaders alike to navigate the complex semiconductor landscape.
The UK's semiconductor industry, once a powerhouse on the global stage, is witnessing a resilient comeback as it positions itself at the forefront of innovation with cutting-edge compound semiconductors. Following years of decline, prompted by economic shifts and global competition, the return is underscored by strategic investments and ground-breaking research, particularly focusing on silicon carbide (SiC) and gallium nitride (GaN). This resurgence is breathing new life into areas known historically for their electronic brilliance, most notably Silicon Glen.
During the 1990s, Silicon Glen emerged as a hub of semiconductor innovation and production, rivaling global centers and employing tens of thousands in the electronics sector. Major corporations such as NEC and Motorola established significant presences in the region, exporting cutting-edge technology worldwide. However, the early 2000s shift towards low-cost production in Asia saw a rapid decline in the UK's domestic semiconductor capabilities, with the dotcom crash exacerbating these challenges.
The industry’s recent revival pivots around the development and manufacturing of compound semiconductors. Unlike traditional silicon-based semiconductors, SiC and GaN offer exciting opportunities due to their superior properties in handling high temperatures and electric fields, making them indispensable for future technological demands.
The materials, silicon carbide (SiC) and gallium nitride (GaN), are transforming the landscape of power electronics due to their efficiency in converting electrical power with minimal energy waste. SiC chips are particularly effective at tolerating high temperatures and electric fields, enabling enhancements in power density and energy efficiency. GaN is similarly revolutionizing industries by making devices like wall chargers more efficient and compact.
These advancements are particularly crucial for sectors such as electric vehicles (EVs) and renewable energy, where energy efficiency directly translates into performance and sustainability. For instance, SiC power converters in EVs can significantly extend vehicle range by reducing energy loss during power conversion.
There are strategic moves to fortify the UK's position in this competitive domain. Notably, US-based Vishay Intertechnology’s acquisition of Newport Wafer Fab and subsequent investment in specialized compound semiconductor production illustrates such initiatives. The Newport plant is set to focus on producing SiC chips, catering primarily to the automotive, data processing, and industrial sectors. These moves are supplemented by the renewed operations at Clas-SiC Wafer Fab in Fife, exemplifying the foundry model that attracts international innovation.
Such investment is also mirrored by vital participation from the UK’s governmental and defense sectors. Efforts by entities like the Ministry of Defense to secure domestic supply chains for semiconductors underscore their strategic importance, particularly for applications like radar and aerospace technology.
Driving this resurgence is a robust partnership with academic institutions. For example, the University of Warwick is leading the charge in SiC device innovation with government-backed funding aimed at propelling the UK into the future of energy and transportation. Such collaborations signify a commitment to not only foster technological innovation domestically but also to translate academic excellence into scalable industry solutions.
Looking ahead, the challenge facing the UK is to build on this momentum to nurture home-grown technologies, ensuring they can be commercialized and scaled within the country. As the global demand for innovative and efficient semiconductor solutions grows, the UK’s focus on clean energy and advanced manufacturing positions it well for future challenges and opportunities.
UK’s revitalization of its semiconductor industry through compound semiconductors is a testament to strategic foresight and adaptability. The UK seems poised to reclaim its status in the semiconductor sector, setting standards that potentially lead the charge toward a more efficient and sustainable technological future. For more in-depth insights, you can explore Tech Xplore's article.
The semiconductor industry, which has been enduring a complex confluence of challenges, finds itself observing another significant shift as NXP Semiconductors announces a change in leadership. On Monday, NXP shared the news of a forthcoming transition in its executive hierarchy, aligning with its quarterly earnings report. Kurt Sievers, who has been at the helm since 2020, is set to retire, passing the baton to Rafael Sotomayor, an internal veteran poised to assume the presidency immediately and the CEO role by late October.
While leadership transitions in the tech industry are not uncommon, they invariably attract scrutiny, particularly when external market conditions persist as volatile and fraught with uncertainty as they are currently.
Chief among the external challenges facing NXP is the ongoing specter of tariffs, notably those recently outlined by US President Donald Trump. The tariffs threaten to exacerbate an already strained semiconductor supply chain, attempting to recover from the disruptions inflicted by the COVID-19 pandemic. The impact of these tariffs, while not directly quantifiable, creates a haze of uncertainty for industry players grappling to forecast demand and supply.
For more insights, see this report for a comprehensive overview of industries affected by the latest tariff measures.
In the wake of these announcements, NXP's shares faced an early morning tumble, with premarket trading noting an 8% decline. This transient market reaction underscores the apprehension prevalent among investors concerning NXP's forward guidance. The company anticipates a dip in revenue for the second quarter, projecting figures between $2.8 billion and $3 billion, as compared to analysts’ expectations approximately averaging $2.86 billion.
Despite the challenging environment, NXP is not retreating into conservatism. Instead, it is aggressively fortifying its future through strategic acquisitions. In January, the company made a significant acquisition of Austrian software innovator TTTech Auto for $625 million. TTTech Auto specializes in software-defined vehicle solutions, positioning NXP advantageously in the escalating race toward autonomous and semi-autonomous vehicles.
Complementing this, February saw NXP's acquisition of Kinara, a company focused on processing units crucial for artificial intelligence applications, for $307 million. These acquisitions not only illustrate NXP's commitment to leveraging cutting-edge technology but also its strategic vision to encompass a broader tech ecosystem.
As NXP embraces its leadership change, it carries forward 'cautious optimism' amid transitional market dynamics. With tariffs casting an uncertain shadow yet hinting at possible silver linings through strategic pivots, its trajectory will be one to observe closely. On a different front, the company's proactive acquisitions indicate a cerebral approach to not just withstand but redefine adversity into opportunity.
For further analysis, explore how companies like STMicroelectronics and Infineon Technologies are also navigating these tumultuous waters, where mature chips for electric vehicles and smartphones continue grappling with supply-demand imbalances.
By focusing on strategic growth, NXP exemplifies resilience, a crucial trait in not only surviving but thriving amid an uncertain tech landscape.
Explore detailed market analysis and reports on Taipei Times.
The intersection of cutting-edge technology and corporate strategy is exemplified in Nvidia's ambitious venture to establish a $500 billion AI server manufacturing presence in the United States. Central to this massive undertaking is ASE Technology Holding Co., a pivotal player in chip packaging and testing. This blog post delves into how ASE is evaluating its involvement in Nvidia's grand plan and the implications for the semiconductor industry.
ASE, revered as the world's largest provider of chip packaging and testing, has been invited to consider a crucial role in Nvidia's U.S.-based AI server initiative. During a recent earnings call, Joseph Tung, ASE's CFO, revealed that the decision-making process is still in its nascent stage. The specifics of potential investments, both in terms of size and timing, remain undefined. Tung highlighted that any decisions would hinge on economic viability. ASE is keenly exploring opportunities, yet the final roadmap remains undetermined. Interested readers can find more details in this Reuters article.
Nvidia's ambition to expand AI server manufacturing within the United States reflects a strategic response to growing demands and geopolitical considerations. The involvement of Siliconware Precision Industries, an ASE subsidiary that handles Nvidia's chip packaging, underscores the global interconnectedness of semiconductor production. Notably, Siliconware currently lacks a manufacturing foothold in the U.S. This raises questions about the logistics of transplanting production capabilities and the subsequent impact on supply chains.
While Nvidia's vision is bold, industry analysts maintain a careful skepticism regarding the feasibility of the $500 billion investment magnitude. Historical challenges faced by tech giants in relocating or establishing manufacturing capabilities in new geographies provide a cautionary backdrop. The semiconductor manufacturing landscape is fraught with complexities ranging from supply chain logistics to workforce capabilities, all of which ASE must carefully consider.
Should ASE choose to proceed with supporting Nvidia's initiative, it could mark the beginning of a new era for semiconductor manufacturing in North America. Historically centered in Asia, the shift could redistribute technological hubs, affecting everything from local economies to global supply chains. It is also significant for other U.S.-based tech entities who may reconsider their manufacturing strategies in the face of evolving geopolitical and business climates.
ASE’s decision, whether to invest or abstain, will not only influence its trajectory but also Nvidia’s—and by extension, the semiconductor industry’s—future in the United States. Stakeholders await further developments with bated breath as ASE balances potential growth against economic rationale. For ongoing updates and discussions within the industry, the original report from Reuters is a valuable resource.
In conclusion, while uncertainties remain, the promise of innovation looms large on the horizon. ASE's decision could redefine what’s possible in semiconductor logistics, ushering in a transformative period for AI server manufacturing with global reverberations.
Sixty months from now, the semiconductor landscape might look completely different, and the UK is vying for a leading role with its recent push into materials discovery. The University of Sheffield, recognized for its contributions to semiconductor R&D, has been awarded a substantial £7 million from the UK's Engineering and Physical Sciences Research Council (EPSRC) for investment in state-of-the-art Molecular Beam Epitaxy (MBE) technology.
The new MBE equipment will be stationed at the National Epitaxy Facility, a collaboration among the universities of Sheffield, Cambridge, and University College London (https://compoundsemiconductor.net/article/121664/7m_awarded_to_University_of_Sheffield_for_materials_discovery). This facility aims to transcend the limitations of current semiconductor materials. With advanced capabilities, the system will accelerate the discovery of new compounds, especially those incorporating earth-abundant materials like zinc and aluminum, essential for the next generation of semiconductor devices.
This investment is more than just a boon for Sheffield; it’s a powerful statement about the UK's priorities in the technology sector. As the global semiconductor shortage painfully highlighted, technological sovereignty is indispensable. This shortage disrupted numerous industries and underlined the necessity for innovative approaches to semiconductor R&D.
Professor Jon Heffernan, a leading figure in the project, emphasizes the importance of such developments. "The National Epitaxy Facility at Sheffield is crucial for the UK's semiconductor capabilities. It not only bolsters the nation's standing in R&D but also aims to set a global benchmark,” he notes.
Perhaps the most exciting aspect of this investment is its integration with artificial intelligence. By leveraging AI, the new MBE system can potentially reduce the discovery time and optimize the formulation of new semiconductor materials. This synergy of AI and materials science may well ignite a renaissance in device innovation.
The emphasis on using earth-abundant materials is not only technologically significant but also environmentally strategic. As the world grapples with sustainability challenges, sourcing materials like zinc and aluminum makes economic and ecological sense.
As the semiconductor industry navigates through its most transformative phase, bolstered by initiatives like these, the UK's strategic positioning could catalyze a new era of technological leadership. The stakes are high, but with investments that double as both technological and sustainable leaps forward, Sheffield and the broader UK semiconductor arena could very well redefine global innovation landscapes.
The semiconductor industry is notoriously competitive, but through collaborative efforts and strategic investments, the UK could shape its future trajectory, promising a secure, innovative, and sustainable tomorrow. The full details of this initiative can be explored further at Compound Semiconductor.
The semiconductor industry is witnessing a renewed emphasis on innovation and research, demonstrated by the recent £7 million investment in the University of Sheffield by the Engineering and Physical Sciences Research Council (EPSRC). This funding heralds a significant advancement in the UK's semiconductor capabilities, particularly in materials discovery. Here’s a closer look at what this means for the industry and the implications of this investment.
This substantial investment is targeted at procuring new molecular beam epitaxy (MBE) equipment, crucial for uncovering and developing new semiconductor materials. The funding will primarily support the National Epitaxy Facility, a consortium hosted by Sheffield in collaboration with Cambridge and UCL. Recognizing semiconductor materials as pivotal for future technological development, this initiative is set to boost the UK’s standing in the global semiconductor landscape.
Epitaxy, the process of growing crystal layers on a semiconductor wafer, is a bedrock technology in developing new material systems. Jon Heffernan, a prominent figure at the National Epitaxy Facility, emphasizes the importance of this equipment—not just for discovering new materials, but also for helping offset the risks associated with global semiconductor shortages, as seen through recent consumer electronics price surges.
A noteworthy aspect of the advanced equipment involves the incorporation of Artificial Intelligence to quicken the discovery of new materials. By leveraging AI, the facility can focus on earth-abundant materials like zinc, aluminium, and nitrogen—essential for sustainable semiconductor production.
Moreover, the advancement in MBE technology will enable the mixing of materials, facilitating entirely new device concepts that could lead to unprecedented efficiencies in semiconductor applications.
Sue Hartley, VP for Research and Innovation at Sheffield, views this investment as pivotal not just for Sheffield but for the entire UK semiconductor sector. The decision aligns with global moves to bolster semiconductor technologies sovereign capabilities, thereby reinforcing the UK as a major player in the innovation ecosystem.
The new technology will aid in developing advanced devices and materials, ensuring the UK maintains a competitive edge in semiconductor research and development at a time when such capabilities are globally scrutinized.
This landmark investment signals a promising outlook for the UK’s semiconductor industry. By focusing on advanced materials development and employing AI, the University of Sheffield and its partners are setting a foundation for pioneering work in semiconductors.
Expectations are high that this strategic enhancement in research facilities will pave the way for breakthroughs that form the backbone of modern technology. For a deep dive into this story, explore the full article.
The electric vehicle (EV) market is on the cusp of a breakthrough as Fraunhofer Institute for Applied Solid State Physics IAF introduces its groundbreaking 1200V gallium nitride (GaN) bidirectional switch. This innovation, presented at the Power Electronics, Intelligent Motion, Renewable Energy, and Energy Management (PCIM) 2025 Expo in Nuremberg, holds the potential to significantly enhance the efficiency and usability of future EVs.
According to Fraunhofer IAF's announcement, the development was part of the GaN4EmoBiL project, a strategic initiative supported by the German Federal Ministry for Economic Affairs and Climate Action. The project's objective is to push the boundaries of GaN power semiconductors to support the burgeoning field of electro-mobility.
The 1200V monolithic bidirectional switch (MBDS) is a marvel of engineering, integrating two free-wheeling diodes within a single package. This reduces component count and leads to lower conduction losses, thanks to its ability to block voltage and conduct current bidirectionally. The technology leverages GaN-on-insulator fabrication techniques that employ substrates like silicon carbide (SiC) and sapphire to enhance insulation and enable higher breakdown voltages.
This device is particularly valuable in grid-connected power converters which are crucial for efficient energy generation and storage. The MBDS's ability to function in the 1200V class opens new possibilities for the development of high-performance electric drive systems.
Currently, the EV market primarily sees 400V systems, with 800V technology emerging as a strong contender. However, the introduction of 1200V systems, facilitated by Fraunhofer IAF’s advancements, promises to revolutionize the sector. With higher blocking voltages, energy losses are minimized while charging powers are boosted, enhancing the range and utility of EVs, including trucks.
The leap to 1200V technology offers noted advantages in terms of charging speed, operational efficiency, and vehicle range, effectively broadening the scope of what electric vehicles can achieve on the road.
At PCIM 2025, Fraunhofer IAF is not only highlighting the 1200V MBDS, but also showcasing its extensive GaN-based power electronics portfolio. The range includes voltage classes spanning 48V to 1200V, with ongoing research aiming at the 1700V class.
Among the innovations are lateral and vertical components, as well as integrated GaN power ICs and modules. Fraunhofer IAF is also committed to the development of highly insulating substrates, enhancing the performance of their power electronics across various applications.
At the conference, experts like Dr. Michael Basler and Dr. Richard Reiner will further elucidate these innovations, emphasizing progressions in lateral and vertical GaN devices and power ICs.
The unveiling of this 1200V MBDS sets a promising precedent for the future of GaN technology in power electronics, particularly for applications in electro-mobility. As the demand for more efficient, scalable, and high-capacity systems grows, technologies like Fraunhofer IAF’s will play pivotal roles in reshaping landscapes across industries.
For more detailed insights and discussions on these exciting advancements, visit the original Fraunhofer IAF news release.
