All IPs > Memory Controller & PHY > SRAM Controller
In the expansive world of semiconductor technology, SRAM Controller semiconductor IPs play a crucial role in managing static random access memory (SRAM). SRAM Controllers are critical components in a wide array of electronic systems due to their speed and efficiency in data access and storage operations. Whether in consumer electronics, telecommunications, or industrial applications, these controllers ensure that memory operations are optimized for maximum performance. At Silicon Hub, we offer an expansive selection of SRAM Controller IPs tailored to handle diverse computational needs.
SRAM Controllers are pivotal in connecting processors and SRAM memory blocks. They facilitate seamless communication between these components, ensuring that data is transferred quickly and efficiently. This capability is particularly crucial in applications that require real-time data processing and high-speed performance, such as gaming consoles, networking equipment, and advanced automotive systems. By integrating SRAM Controller IPs, designers can achieve reduced latency and enhanced system throughput, which are essential for maintaining competitiveness in today’s tech-driven market.
Apart from the impressive performance features, these semiconductor IP solutions are also designed with flexibility and scalability in mind. Users can select IPs that offer customizable features to cater to specific application requirements, such as varying memory sizes and bandwidths. This adaptability makes SRAM Controller IPs suitable for cutting-edge applications, including artificial intelligence (AI) devices, IoT technologies, and mobile computing. Furthermore, these controllers often come equipped with error correction capabilities, adding another layer of reliability to critical systems.
At Silicon Hub, our SRAM Controller semiconductor IP portfolio is carefully curated to meet the highest industry standards. Whether you are designing compact systems for power-sensitive environments or high-end servers requiring massive bandwidth, our selection offers robust and versatile solutions. Explore our SRAM Controller IPs to find the perfect match for your project requirements and ensure your next innovation harnesses the full potential of efficient and effective memory management.
CrossBar's ReRAM Memory is designed to redefine data storage with its high-density and energy-efficient characteristics. The memory solution can achieve terabyte-scale storage on-chip, significantly surpassing traditional flash memory solutions in both speed and power consumption. Offered in a 3D cross-point architecture, it is capable of providing high performance with minimal layout overhead. Engineered for next-generation applications, this ReRAM technology boasts a performance edge with 20ns read times and 12µs write capabilities, eliminating the usual erase latency. It is significantly faster than traditional NAND flash with its lightning-fast read and write speeds, making it suitable for real-time processing required by cutting-edge applications such as AI and IoT. Security is a key feature, offering tamper-resistant provisions for cryptographic key storage ensuring robust protection against data breaches. The memory solution leverages advanced technology to deliver energy savings of up to 5x compared to eFlash, and up to 40x when compared to BLE, positioning it as an ideal choice for mobile and low-power applications.
Digital Blocks' AXI4 DMA Controller is a robust solution designed for transferring data efficiently between systems over the AXI4 interface. Supporting up to 16 independent channels, it excels in high data throughput both for small and large data sets. Its capabilities are extended with advanced DMA features, allowing custom configurations to minimize silicon usage and licensing costs. Precise control over DMA operations is facilitated through its customizable settings, supporting a flexible range of interface buses and addressing modes.
Toggle MRAM technology represents one of Everspin’s pioneering contributions to memory storage. This innovative system is engineered to deliver consistent performance with non-volatile memory capabilities, enabling persistent data retention without reliance on power. Toggle MRAM functions by storing data through magnetic states, ensuring remarkable data integrity and endurance even under strenuous conditions. Emphasizing simplicity and efficiency, the Toggle MRAM occupies a prominent space in applications requiring rapid read and write cycles. It excels in environments where durability is crucial, as it provides an unmatched lifecycle with enduring data storage capabilities. This technology proves particularly beneficial for mission-critical applications where data loss is not an option. Everspin’s Toggle MRAM is designed to seamlessly integrate with various systems, offering compatibility and flexibility to a broad range of industries, including aerospace and automotive. Its unique attributes such as fast access times and prolonged endurance make it a preferred choice for systems that require robust data logging and secure data holding capabilities.
Aeonic Power revolutionizes power delivery within SoCs through integrated on-die voltage regulation tailored to high-demand ICs and chiplets. It offers a scalable architecture that meets diverse energy needs, optimizing both energy usage and bill of materials (BOM). Aeonic Power products include agile telemetry features, allowing design teams to glean invaluable insights into power behavior and improve power grid resilience. The family supports energy optimization efforts by enabling functionalities like per-core DVFS and virtual power islands, providing a versatile approach to energy management in complex systems.
The ReRAM IP Cores for Embedded Non-Volatile Memory are crafted to seamlessly integrate into microcontrollers (MCUs) and systems on chips (SOCs), addressing the enduring need for efficient and scalable storage. These IP cores leverage CrossBar's signature 3D ReRAM technology to provide unparalleled performance in both speed and density, tailored specifically for embedded systems. Designed to offer superior integration capabilities, this ReRAM technology reduces traditional bottlenecks witnessed with embedded flash memory solutions. It allows for rapid data access and storage, making it a superior choice for applications requiring frequent read/write operations. By offering robust tamper-resistance for secure key storage, these IP cores also add an additional layer of security critical for modern embedded systems. They enable cost-effective scalability and flexibility for manufacturers looking to enhance their products with cutting-edge memory technology.
TwinBit Gen-1 stands as a cutting-edge, logic-based non-volatile memory suitable for 180nm to 55nm process nodes. It prides itself on remarkable endurance, capable of performing over 10,000 programming cycles. This IP macro is designed for integration into CMOS logic processes without extra masking steps, easing the implementation in advanced technology nodes. The TwinBit Gen-1 series is well-adapted for a diverse range of applications, including IoT devices, microcontrollers, FPGAs, and ASICs with embedded NOR FLASH, offering memory sizes from 64 bits to 512K bits. It provides a high-density, small-area solution, which is particularly beneficial for applications requiring field-rewritable firmware or secure data storage. This memory technology ensures low-voltage and low-power operations, accommodating automotive industry standards through compliance with AEC-Q100. TwinBit Gen-1 includes built-in test circuits that allow for stress-free testing, ensuring reliability in diverse operating conditions. The technology also supports low-cost manufacturing and faster development turnaround times.
EverOn is sureCore's revolutionary Single Port Ultra Low Voltage (ULV) SRAM, offering significant power reductions. Proven on the 40ULP BULK CMOS process, it provides up to 80% dynamic power savings and 75% static power reduction. This memory operates across an impressive voltage range, from 0.6V to 1.21V, allowing it to support applications demanding extreme energy efficiency. The ULV compiler accommodates memory capacities from 8Kbytes to 576Kbytes and sustains a wide operational voltage spectrum. Architecturally, EverOn supports dynamic voltage and frequency scaling, using a single supply rail to simplify integration. SMART-Assist technology ensures reliable operation even at retention voltages, with architectural innovations that enhance system flexibility. By supporting various power-down states and bank control options, EverOn allows designs to be tailored specifically to varying operational conditions, making it ideal for wearable technology and IoT products. With its groundbreaking power-saving features and robust operational profile, EverOn stands as an ideal choice for developers aiming to extend battery life without compromising SRAM performance.
Secure OTP from PUFsecurity is the next evolution in data protection, utilizing a secure anti-fuse OTP memory for storing keys and sensitive information. It enhances traditional OTP by providing a comprehensive protection mechanism against hardware attacks. The solution features digital and physical macros along with a resilient anti-tamper shell, supporting multiple interfaces for smooth integration into diverse IC applications.
YouDDR is a comprehensive technology encompassing not only the DDR controller, PHY, and I/O but also features specially developed tuning and testing software. It provides a complete subsystem solution to address the complex needs of DDR memory interfaces. The integrated approach allows for cohesive synchronization between the controller and PHY, optimizing performance and reliability. The YouDDR technology ensures seamless integration into a variety of platforms, supporting a broad range of applications from simple consumer electronics to advanced computing systems. By offering enhanced tuning capabilities, it allows developers to fine-tune performance metrics, ensuring that systems can operate within their optimal performance windows. Developers utilizing YouDDR benefit from a thoroughly tested and verified subsystem that significantly simplifies the design cycle. This not only reduces development time but also enhances the likelihood of first-pass success, providing a competitive edge in manufacturing efficiency and product launch speed.
TwinBit Gen-2 builds upon the foundation of its predecessor by supporting more advanced process nodes from 40nm to 22nm. Like the Gen-1 version, it is integrated into CMOS processes without necessitating additional masks or processing steps. This technology incorporates the novel Pch Schottky Non-Volatile Memory Cell, facilitating ultra-low-power operation. With the Gen-2, users gain access to a memory solution that handles both programming and erasing effectively through controlled hot carrier injection. This is achieved through intelligent cell bias manipulation, ensuring optimal performance. The process of hot-hole and hot-electron generation is finely distributed to maintain integrity during both program and erase operations. TwinBit Gen-2 is specifically advantageous for applications that demand ultra-low-power memory solutions. Its structure caters well to IoT and automotive applications where energy efficiency and reliability are paramount. Maintaining compactness and efficiency, this IP further enhances NSCore's portfolio in serving advanced technological requirements.
The LEE Flash G2 transcends traditional flash memory with its advanced features and innovative use of SONOS technology. Constructed to redefine the potential of non-volatile memory (NVM) systems, G2 stands out with its ability to perform read operations at standard VDD levels. By minimizing high voltage areas within the memory block, G2 enables seamless connectivity between memory cells and logic circuits, fostering the direct integration of NV-SRAM functionality within larger systems. This unique capability stems from G2's design, which integrates SONOS transistors with advanced switching elements to offer unprecedented functionality. The low programming current, in picometric amplitude, mirrors a fraction of what is required for floating-gate technologies, presenting designers with extensive flexibility in chip architecture. The extended feature set of G2 further elevates its value, particularly for applications needing rapid data transfer, such as MCU and SoC developments. G2's proprietary NV-SRAM design allows for efficient data transfer between SRAM and non-volatile memory, providing a robust solution for applications requiring swift power cycling without data loss. It eliminates the need for separate flash blocks and interconnect interfaces, thereby streamlining design processes and reducing material costs. This makes the G2 particularly suitable for high-performance embedded systems, facilitating quicker startups and power-responsive operations.
T-Head Semiconductor's Zhenyue 510 is a high-performance SSD controller tailored for enterprise-grade solid-state drives. This controller is intricately engineered to handle large-scale data processing with enhanced reliability and speed. It integrates innovative memory management techniques that maximize the effectiveness of storage solutions, thereby supporting modern data-driven applications in various industries. The Zhenyue 510 boasts advanced error correction mechanisms and efficient power mode management, which together ensure robust data integrity and energy efficiency. Its architecture allows for seamless integration with existing server infrastructures and supports an extensive set of storage interfaces, facilitating versatile deployment options for enterprise users. These features combine to deliver a balance of speed and dependability essential for sustaining the performance demands of high-end applications. With its focus on optimizing NAND performance, the Zhenyue 510 excels in sequencing large datasets, making it indispensable for workloads that thrive on quick data access and manipulation such as databases and real-time analytics. Its design underpins T-Head Semiconductor's mission to deliver components that not only meet but exceed the rigorous expectations of contemporary technology landscapes.
The sensor technology from Analog Bits plays a pivotal role in monitoring and ensuring system stability and power integrity. These sensors are expertly designed to provide precise environmental data and real-time feedback critical for power management and thermal control. With exceptional accuracy, they allow devices to adjust operational parameters dynamically, enhancing the reliability and efficiency of system-wide performance. With support for extensive system diagnostics, their sensors are crucial in critical applications where stability and energy management are of utmost importance. They help in detecting power fluctuations and temperature variations, enabling proactive management strategies that prevent system failures. This adaptability is important in implementing effective industrial and enterprise-level applications that need constant monitoring. Incorporating advanced calibration features, these sensors offer remarkable precision in mixed-signal environments. They also significantly contribute to reducing power consumption and maintaining system integrity under various conditions, marking a substantial advantage in sustainable technology solutions. Their industry-leading integration capabilities make them indispensable for cutting-edge technology deployments.
PermSRAM offers a flexible non-volatile memory solution designed for seamless integration with standard CMOS processes from 180nm to 28nm and potentially beyond. Its key features include one-time programmable and pseudo multi-time capabilities with a variety of memory configurations, ranging from 64 bits to 512K bits. Notably, PermSRAM incorporates a non-rewritable hardware safety lock, which is ideal for secure storage of codes. This memory macro caters to applications requiring high security and reliability such as security code storage and program management. It provides a robust solution with stable yield performance, making it an excellent choice for various security-sensitive uses. Furthermore, it eliminates the need for additional charging circuits by operating with a typical system board voltage of 5V, which leads to significant savings in silicon area. PermSRAM is structured to handle stress-free testing environments thanks to its built-in self-test circuits, maintaining efficiency even under demanding conditions. Its small silicon footprint and highly secure data storage make it suitable for a comprehensive set of applications, including analog trimming, gamma correction, and chip identification solutions.
SuperFlash® Technology stands out as a cost-effective and high-performance solution, utilizing a proprietary split-gate Flash memory cell. It provides exceptional programmability for System-on-Chip (SoC) applications. Renowned for its reliability, SuperFlash® technology has been in production for over two decades, ensuring robust solutions for industries such as automotive, IoT, AI, and secure smart cards. Its impressive endurance, excellent data retention, and resilience to high temperatures make it an optimal choice for demanding environments. The architecture simplifies the design process while maintaining compatibility with standard silicon CMOS processes, extending scalability from larger nodes down to 110 nm technology. Its immunity to Stress-induced Leakage Current (SILC) enhances its reliability further. Available through flexible licensing options, SuperFlash® technology is employed by leading foundries and Integrated Device Manufacturers worldwide. This technology's availability spans a broad range of process nodes, from 28 nm to 500 nm, ensuring wide applicability in next-generation memory solutions. SuperFlash®'s impressive track record with over 90 billion units shipped underscores its innovation and reliability in the market.
DRAM memory modules from Avant Technology are engineered to meet the demands of applications requiring both speed and large capacity. Known for their rapid data access and storage capabilities, DRAM modules are indispensable in gaming, point-of-sale systems, and medical equipment where quick data retrieval is essential. Avant's DRAM modules adhere to JEDEC standards and offer a variety of configurations like UDIMM, SODIMM, and ECC DIMM, catering to both industrial and consumer requirements. These modules are designed for high performance, supporting interfaces like DDR3, DDR4, and DDR5, which are critical for maintaining system efficiency and reliability. Designed to operate in diverse temperature ranges, Avant’s DRAM solutions can handle both industrial and commercial environments. Whether for gaming consoles or medical devices, these memory modules provide the necessary bandwidth and low power consumption needed for high-demand tasks.
Non-Volatile Memory (NVM) Solutions are engineered for reliability and long-term data retention, crucial for devices requiring memory persistence even in power-off conditions. This technology underpins key storage applications across various sectors, including automotive and industrial markets. Tower Semiconductor's NVM solutions offer a variety of cell structures tailored to meet specific high-performance criteria, including low power consumption and high density. These attributes make them suitable for both consumer electronics and embedded systems where consistent memory access is vital. Enhanced by proprietary technologies like Y-Flash and e-Fuse, these NVM solutions provide customizable options for tailored memory designs, allowing for significant improvements in device functionality and security. The adaptability of these solutions ensures their relevance in an ever-growing technological landscape.
The LEE Flash ZT is an innovative SONOS-based memory, crafted to deliver the benefits of multi-time programmable (MTP) non-volatile memory with minimal mask layers. Its zero additional masks design significantly lowers production costs while maximizing reliability, making it a truly cost-effective option for modern electronics systems. Focusing on providing tight Vt distributions and superior fault tolerance, the LEE Flash ZT utilizes electric charge retention technology inherently resistant to common defects. This guarantees excellent performance even after thousands of program and erase cycles, without degeneration in data integrity. Specifically optimized for applications where memory stability and endurance are critical, it delivers a robust solution that simplifies development and maintains the quality over extended use. The ZT's compatibility with existing CMOS processes without additional mask layers ensures it's an attractive option for a variety of implementations, further supported by its rapid integration capability. It's especially beneficial for systems seeking to minimize cost overheads and enhance value propositions without compromising on reliability or performance. Applications extend across diverse fields such as automotive controllers, consumer electronics, and industrial devices, bolstered by the memory's ability to efficiently handle numerous cycles without performance dips.
CrossBar's ReRAM IP Cores for High-Density Data Storage are tailored to enhance the memory capacity of various devices beyond current possibilities. These cores are designed with CrossBar's advanced ReRAM architecture which enables stacking technology to achieve ultra-dense data storage solutions. This level of memory sophistication is ideal for applications requiring massive data archiving and real-time data analytics, delivering energy-efficient storage at a fraction of the power needed by traditional HDD or SSD solutions. The ReRAM architecture provides rapid read/write cycles, catering to applications demanding high throughput and low latency. Incorporating CrossBar’s secure storage capability, this core ensures data integrity and security are maintained without sacrificing performance. It is an optimal choice for data-driven sectors striving to manage vast pools of information rapidly and effectively, setting a benchmark for future storage solutions.
The LEE Fuse ZA features a zero additional mask design, focusing on anti-fuse one-time programmable (OTP) technology. This provides significant cost savings while guaranteeing high reliability and robust data retention. Tailored for applications requiring permanent data storage, LEE Fuse ZA excels in areas where security and durability are essential, making it the ideal choice for code storage, device configuration, and secure key management. Utilizing a modified SONOS architecture, the LEE Fuse ZA ensures the highest standards in data preservation, even under demanding conditions. The technology circumvents typical failure modes seen in alternative memory technologies by fortifying the integrity of stored data against environmental changes and prolonged usage. This robustness extends the life expectancy of devices, particularly in harsh operating environments, without compromising on performance. Moreover, the LEE Fuse ZA's easy adaptability to standard manufacturing processes without the need for specialized materials expedites its inclusion in a variety of electronic systems. With applications ranging from smart card manufacturing to advanced motor control, its attributes make it an essential component for modern embedded systems in need of secure, reliable one-time programmable memories.
The LEE Flash G1 is a cost-efficient SONOS flash memory solution crafted for exceptional low-power performance. Utilizing SONOS architecture, it overcomes common challenges faced by traditional split-gate memory technologies. With inherent charge retention capabilities, SONOS provides remarkable reliability through electric charge retention within a distributed charge trap, thereby ensuring minimal leakage. The G1's high endurance is maintained through Fowler-Nordheim tunneling, which ensures negligible oxide damage during programming and erasure, resulting in a long-lasting memory solution. Floadia's G1 memory cell is designed to integrate smoothly with standard CMOS processes, ensuring full compatibility with existing systems while necessitating few, if any, additional masks. This integration leads to decreased production costs and encourages efficient manufacturing workflows across various fabs. Featuring high-speed read operations with minimal energy consumption, the LEE Flash G1 addresses both cost concerns and technical demands, positioning it as a reliable choice for multiple applications. The G1's streamlined architecture means it's easy to adopt within semiconductor fab lines, using common materials that simplify the manufacturing process. This enhanced compatibility supports a diverse array of applications, including automotive MCUs, sensor controllers, and power management solutions. Moreover, the memory's rapid test cycles help minimize overhead in production time, making it an appealing choice for industries focused on quick turnaround times and reduced developmental expenses.
MiniMiser provides an innovative approach to register file design by significantly decreasing power consumption while maintaining high performance. This architecture supports both low power and high performance, offering a multi-port register file that cuts power usage by over 50%. By replacing traditional registers with MiniMiser, developers can fine-tune operational performances across diverse voltage settings, allowing for optimized design adjustments based on specific application needs. In emerging AI-driven wearable technology, where power management is crucial to extending device usability, MiniMiser provides the necessary flexibility to manage power resources efficiently. By utilizing a single rail design, MiniMiser negates the complexities of level shifters and static timing, simplifying integration with system logic. MiniMiser's contribution to power optimization is critical for extending battery life and maximizing device runtime in high-demand applications. Its adaptability across differing performance modes makes it a strategic component in the design of competitive, power-efficient semiconductor solutions.
Attopsemi's I-fuse is a revolutionary one-time programmable memory solution that breaks from traditional designs by eliminating the need for explosive anti-fuse technology. Instead, this innovation thrives on a patented design that utilizes fully standard logic processes, making it both scalable and highly robust. Unlike other OTPs which require redundancy and charge-pump integration, I-fuse offers a compact, efficient alternative with proven reliability across diverse applications, including automotive and medical sectors. The I-fuse platform is remarkable for its adaptability, having been silicon-proven across a wide spectrum of process nodes from 0.7μm to 22nm. This flexibility ensures it fits seamlessly into various manufacturing scenarios, benefiting customers with its exceptional performance metrics such as low power consumption and high testability. Furthermore, I-fuse is engineered with a wide temperature range of operation, enhancing its reliability even in harsh conditions. Attopsemi's commitment to quality and innovation is evidenced by the technology's compliance with AEC-Q100 Grade 0 standards, which guarantees robust functioning in the most challenging environments. The company's extensive IP portfolio, bolstered by over 90 patents, continues to propel I-fuse forward as a trusted solution in the ever-evolving field of semiconductor technologies.
NeoBit is an innovative One-Time Programmable (OTP) silicon IP that exemplifies reliability and efficiency in data storage solutions. It is engineered for robustness and caters to diverse applications requiring permanent data preservation. The technology ensures that data is securely stored throughout the product's lifecycle, with the assurance that it can be accessed whenever required without the risk of alteration. NeoBit is specifically designed to meet the demands of applications necessitating high endurance and reliability. It plays a critical role in devices where data integrity is crucial, such as authentication keys and personalization data in consumer electronics and automotive domains. Its ability to retain data securely forms a vital part of systems that prioritize security and anti-counterfeiting measures. The architecture of NeoBit facilitates easy integration with existing electronic designs, offering developers a dependable solution that supports extended product durability. By simplifying storage concerns within semiconductor design, NeoBit empowers manufacturers to deliver products that meet both performance and security benchmarks.
The NuRAM Low Power Memory represents a state-of-the-art memory solution utilizing advanced MRAM technology. Engineered to provide rapid access times and extremely low leakage power, NuRAM is significantly more efficient in terms of cell area compared to traditional SRAM, being up to 2.5 times smaller. This makes it an ideal replacement for on-chip SRAM or embedded Flash, particularly in power-sensitive environments like AI or edge applications. The emphasis on optimizing power consumption makes NuRAM an attractive choice for enhancing the performance of xPU or ASIC designs. As modern applications demand higher efficiency, NuRAM stands out by offering crucial improvements in power management without sacrificing speed or stability. The technology offers a compelling choice for those seeking to upgrade their current systems with memory solutions that extend battery life and deliver impressive performance. NuRAM is particularly beneficial in environments where minimizing power usage is critical while maintaining high-speed operations. This makes it a preferred choice for applications ranging from wearables to high-performance computing at the edge.
NeoFuse introduces an anti-fuse OTP technology that enhances data security and reliability in semiconductors. This silicon IP is optimized for environments where security of stored data is paramount, offering a robust solution for secure memory applications. NeoFuse's architecture is distinguished by its ability to keep data intact without the possibility of being altered, making it ideal for applications involving encryption keys and digital rights management. Engineered for environments with high demands for data security, NeoFuse integrates seamlessly into SoCs, enhancing the security infrastructure. Its anti-fuse mechanism is a significant leap forward, providing unparalleled assurance against data tampering and unauthorized access. NeoFuse ensures that sensitive data is safeguarded throughout the device's operational life, proving indispensable for applications in sectors like finance and defense. The flexibility of NeoFuse makes it compatible with a wide range of technologies and platforms, aiding in the design of secure systems where data confidentiality and integrity are non-negotiable. By integrating NeoFuse, manufacturers can assure users of heightened security measures, making it a strategic component in the secure semiconductor landscape.
The DDR Memory Controller by OPENEDGES acts as the central management hub for memory operations, coordinating transactions, and optimizing data flow between the processor and memory. This component is critical for managing memory access in multicore systems, optimizing latency and throughput for complex computing tasks. With its advanced scheduling and pre-fetch algorithms, the DDR Memory Controller enhances data access times significantly, reducing bottlenecks and improving overall system throughput. Its intelligent control mechanisms allow for seamless transitions between active and idle states, further promoting efficiency in energy consumption. The controller is engineered to support a wide range of DDR standards, ensuring flexible compatibility with various DRAMs. Its architecture inherently improves system performance through tight integration with other subsystems, particularly within memory-intensive applications where efficiency and speed are paramount.
The SmartMem Subsystem is designed to enhance memory functionality through a synthesisable and configurable architecture. This memory subsystem significantly boosts power efficiencies and improves both performance and endurance. Not limited to just Numem's own products, it can easily interface with other high-performance MRAMs, RRAM, and Flash technologies, offering versatility across different hardware needs. Built with Numem's thorough memory expertise and innovative patents, the SmartMem Subsystem delivers MRAM performance that rivals SRAM, characterized by much lower standby power. Its intelligent power management system controls MRAM’s non-volatile nature for ultra-efficient operation, making it robust against endurance challenges while seamlessly integrating into varied systems, whether in edge devices or expansive data centers. The subsystem supports software-defined scalability, which negates the necessity for new hardware designs. This makes it an excellent choice for future-proofing memory solutions in AI workloads, ensuring agility and adaptability across rapid advancements in AI applications.
The SRAM provided by DXCorr stands as a highly efficient and tailored solution, designed to address the demands of modern data storage. Known for its high-speed performance, this memory technology is pivotal in applications requiring rapid data access. SRAMS offer lower latency and power consumption compared to alternatives, making them ideal for high-performance computing and processing tasks. The customizability of DXCorr's SRAM allows for adaptations that suit specific requirements, reinforcing its use in a variety of technological domains. These memory components play an essential role in embedded systems, enhancing their operational capacity through rapid data retrieval and storage capabilities. With a focus on improving the speed and efficiency of these systems, DXCorr's SRAM offerings cater to the needs of sectors ranging from consumer electronics to industrial applications. Through meticulous design, DXCorr ensures that their SRAM modules maintain consistency and reliability under various operational conditions. The SRAM solutions are born from DXCorr's innovative approach to memory design, further facilitating integration into complex chip architectures. This customization potential means that each SRAM unit delivered can be fine-tuned to meet the power, performance, and area (PPA) requirements unique to its intended application, thereby optimizing the end-user experience across numerous platforms.
Spectral's MemoryIP offers a wide array of silicon-proven, high-density, and low-power static random-access memories (SRAMs). This library includes six fundamental architectures: Single Port & Dual Port SRAMs, ROM, and Register Files (1 Port, 2 Port, and Pseudo-2 Port). Employing uniquely tailored bit cells, Spectral's compilers ensure robust functionality and optimal performance with minimal power usage. This customization is part of the broader Memory Development Platform, which allows users to tailor designs and extend capabilities easily. The MemoryIP is meticulously architected for high efficiency and supports advanced process nodes, compatibility with any standard CMOS technology, and even offers source code options for greater flexibility. Spectral MemoryIP distinguishes itself with its inclusion of proprietary SpectralTrak technology, a specialized PVT (Process, Voltage, Temperature) monitoring system that enhances reliability by adjusting internal memory timing to environmental variations. Its compilers, such as SpectralSPSRAM, SpectralPS2PSRAM, and SpectralDPSRAM, cater to high-capacity instances, while options like Spectral1PRF and Spectral2PRF are suited for tasks like scratchpad memories and FIFO applications. With expandable configurations ranging from 8 Words to 16K Words in depth and data widths from 4 to 144 bits, MemoryIP can meet diverse implementation needs. These features, alongside multi-bank architecture and low dynamic power, make MemoryIP a flexible choice for both foundries and fabless semiconductor companies pursuing effective memory solutions. Enhanced by Sleep and Power options, it supports BIST and ECC, safeguarding data integrity while promoting energy efficiency.
The DDR PHY from OPENEDGES Technology is designed to optimize the interface between the memory controller and DRAM, ensuring high-speed data transfer and efficient power usage. This PHY layer is instrumental in achieving exceptional performance in modern computing environments. By focusing on reduction of power consumption while maintaining peak efficiency, this solution is ideal for manufacturers seeking to enhance the performance of their channeled data systems. Its robust architecture makes it an essential component for systems requiring rapid data movement and synchronization, crucial for sustaining the high demands of computing applications. The design of the DDR PHY emphasizes DRAM optimization, ensuring that the memory subsystem operates at its highest potential while providing significant improvements in speed and bandwidth management. This adaptability means it effectively meets the diverse needs of various semiconductor project requirements. Built with scalability in mind, the DDR PHY supports a range of DRAM technologies and ensures seamless integration with the memory controller. Its design facilitates synergy with other IP solutions, enhancing the overall performance of the memory subsystem and providing a cohesive interface for streamlined functionality.
The GDDR7 PHY and Controller from Innosilicon is designed to meet the high-performance needs of modern graphics and computing environments. It offers impressive bandwidth efficiency and speed, providing an ideal solution for high-end graphics cards and systems requiring vast data throughput. Innosilicon’s GDDR7 solution is a testament to their commitment to innovation, incorporating advanced technical features for optimized performance. Built to be compatible with various technological interfaces, this GDDR7 solution ensures seamless integration into existing systems. It has been engineered for enhanced signal integrity and lower power consumption, helping to reduce the operational cost while providing peak performance consistency. The forward-thinking design anticipates future industry trends, providing scalable capabilities to handle increased data demands. As one of Innosilicon's flagship products, the GDDR7 PHY and Controller represents a fusion of technological excellence and practical functionality. This solution operates within rigorous quality standards, guaranteeing reliability and efficiency in real-world applications. It supports numerous process nodes catering to a wide array of industrial needs while maintaining stringent compliance with industry protocols.
NeoEE provides a remarkable advancement in Multi-Time Programmable (MTP) silicon IP, offering high endurance and performance for applications requiring repeated programming. Designed for up to 100,000 programming cycles, NeoEE is perfect for usages that require regular updates to data stored on ICs, such as in firmware updating and data logging systems. This IP is ideal for environments where data must be frequently rewritten, such as in IoT devices and consumer electronics. The technology ensures data integrity through repeated cycles, thus extending device utility and efficiency. NeoEE's robust architecture is suited to applications where flexibility in data handling is crucial. Integrating NeoEE into electronic designs allows for greater adaptability in product development, assisting in the creation of durable devices that comply with varying market demands. Its extended programmability offers a competitive edge in dynamic environments where technology must keep pace with evolving user needs.
Quazar Quad Partition Rate Memories leverage Quad Partition Rate technology to replace multiple QDR devices within an FPGA configuration, providing high-capacity SRAM that enhances board capability while reducing complexity and cost. The simple serial SERDES setup minimizes signal connections needed, offering higher performance than traditional counterparts at nearly a third of the cost per Mbit. These memories offer flexible operating modes: DEEP mode, which unifies memory resources into four distinct high-capacity partitions, and WIDE mode, allowing partitioned access for larger data word widths. Accepted in both modes, this innovative approach facilitates simplified access management, pushing the boundaries of what traditional designs can achieve.
The SiC Schottky Diode from Nexperia is a powerful semiconductor component offering remarkable efficiency and fast switching capabilities. Engineered using Silicon Carbide technology, this diode is ideal for applications that require superior performance in high-frequency operations. Its inherent advantages include low forward voltage drop and minimal reverse recovery losses, which are essential for energy-efficient power electronics. This diode excels in high-pressure environments, supporting applications with stringent power management requirements. The SiC Schottky Diode's ability to operate at higher temperatures compared to silicon diodes makes it an excellent choice for automotive and industrial applications where thermal stability is crucial. This component addresses the growing demand for components capable of performing in advanced and robust electronic systems. Versatile in its application, the SiC Schottky Diode is particularly beneficial in systems where minimizing power loss is critical. It finds extensive use in power factor correction circuits, solar inverters, and industrial power supplies. Nexperia's dedication to high-quality and efficient designs is clearly exemplified in this product, which is crafted to enhance system performance and reliability.
The Platform-Level Interrupt Controller (PLIC) by Roa Logic is a comprehensive solution for managing interrupt signals in sophisticated and large-scale computing environments. Compatible with RISC-V platforms, it is fully parameterised and offers an efficient means to handle and prioritize multiple interrupt sources. The PLIC's design emphasizes scalability and flexibility, allowing developers to adapt the module for a wide range of system requirements. The PLIC supports a configurable number of interrupt sources, each with customizable priority levels. This enables a tailored approach to the handling of critical interrupts, ensuring that high-priority tasks receive immediate attention. It serves as an essential building block for systems that demand precise and reliable interrupt management, making it indispensable in complex processor environments. With its easy integration into existing RISC-V platforms, the PLIC provides a seamless upgrade to traditional interrupt controllers. Its high level of adaptability ensures that it can be calibrated to complement specific system architectures, enhancing performance in varied operational scenarios.
sureCore's PowerMiser is a cutting-edge low power SRAM solution designed for devices that demand exceptional battery life with minimal operational and standby power consumption. PowerMiser is available in 28nm FDSOI, 28nm HDC+, and 22nm ULL BULK CMOS processes, providing a flexible voltage range from 0.7V to 1.2V. This IP achieves dynamic power savings exceeding 50% compared to conventional SRAM solutions, while also reducing leakage power by 21% to 38% depending on conditions. The PowerMiser compiler handles capacities up to 576Kbit and offers word lengths of up to 144 bits with three multiplexing configurations. It facilitates automatic generation of vital design documentation and models, streamlining integration into standard EDA workflows. The implementation of Bit Line Voltage Control techniques helps the IP maintain high performance even at lower voltage operations, without compromising on retention capabilities, thanks to versatile sleep modes. Retentive sleep modes enable rapid wake-up and maximal leakage current savings, ensuring the SRAM can adjust to the needs of dynamic applications without sacrificing power efficiency. This makes PowerMiser a substantial ally for modern, high-demand applications that prioritize power savings.
NeoMTP represents a significant innovation in silicon IP, offering a Multi-Time Programmable solution that addresses the needs of applications requiring frequent data updates. With more than 1,000 programming cycles, NeoMTP strikes a balance between flexibility and durability, making it an ideal choice for applications where data revisability is essential. Its versatility ensures that it can be adopted across a variety of devices that require re-programmability, such as in automotive and industrial control systems. By providing robust storage and data management capabilities, NeoMTP helps simplify electronic design and manufacturing processes, contributing to improved product lifecycle management. The enhanced features of NeoMTP facilitate its seamless integration into a wide array of semiconductor designs, ensuring that devices remain adaptable to shifting requirements while maintaining high performance and reliability standards. As industries continue to adopt IoT and smart technologies, solutions like NeoMTP are crucial in enabling dynamic updates and functionality adaptations.
Weebit Nano's Embedded ReRAM brings transformative benefits to memory enhancement for semiconductor designs. This ReRAM technology offers superior speed and power consumption reductions compared to traditional NVMs, making it highly suitable for advanced applications like IoT and automotive systems. The embedded technology integrates seamlessly into existing semiconductor infrastructure, allowing for easier transitions and improved performance. With its robust data retention and high endurance, this ReRAM enhances device longevity and reliability, catering to the demanding environments of modern electronics while maintaining low energy requirements. The Embedded ReRAM technology by Weebit Nano is designed with scalability in mind, addressing the constraints seen with conventional memories at sub-28nm levels. Its innovative architecture enables faster operation speeds and maintains performance at extreme temperatures, ensuring robust operation across varied applications. This makes it ideal for systems requiring frequent read/write operations, offering a balance between efficiency and power usage that is necessary for future-forward technology systems. By positioning itself as a leader in ReRAM technology, Weebit Nano caters to industries looking to optimize semiconductor performance with next-generation solutions. The embedded ReRAM is not just a memory upgrade; it's an essential enabler for achieving high-performance results across a broad spectrum of use cases, from industrial control systems to advanced consumer electronics.
NeoFlash provides highly programmable silicon IP, designed to support up to 100,000 programming cycles. It is tailored for applications where longevity and reliability in data storage are crucial. With its extensive programmability, NeoFlash caters to a diverse range of functions that require frequent and reliable data updates, such as in consumer electronics and embedded systems. This IP stands out in scenarios where products demand long-term sustainability and high endurance data storage. NeoFlash's structure is engineered to uphold data integrity across multiple usage cycles, thereby reducing the risk of data corruption and ensuring consistent performance. It's particularly beneficial in environments where data needs to be frequently refreshed or modified. Manufacturers benefit from NeoFlash through the flexibility it offers in integrating into existing systems, simplifying design processes and facilitating cost-effective product iterations. As demands for adaptable storage solutions grow, NeoFlash presents a forward-thinking choice, equipping devices with the means to navigate constantly evolving technological landscapes.
DXCorr's TCAM is a sophisticated memory solution that processes data at exceptional speeds by executing search operations natively in hardware. This kind of memory is particularly beneficial for network routers, switches, and other devices where rapid data retrieval is essential. With the ability to store data entries in ternary values (0, 1, and X for 'don't care'), TCAM excels in tasks like address lookup and pattern matching, making it indispensable in high-speed networking applications. By leveraging TCAM, systems can conduct parallel searches, providing a significant speed advantage over conventional search techniques. This capability ensures faster data processing, which is vital for maintaining efficient network throughput and performance. In addition, its ability to handle complex queries with ease broadens its utility beyond networking into database management and artificial intelligence. DXCorr's approach to TCAM involves optimizing both performance and efficiency. This entails reducing power consumption while maintaining speed and reliability, which are crucial for applications requiring constant data handling and high availability. Their TCAM solutions are designed to integrate seamlessly into existing architectures, providing flexibility and scalability to adapt to evolving technological demands.
DXCorr's MRAM technology offers a compelling alternative to conventional memories with its non-volatility, high endurance, and superior read/write speeds. The use of magnetic tunnel junctions allows MRAM to retain information even when power is lost, making it a crucial technology for applications that demand data persistence. Its quick access times and energy efficiency complement its robust nature, placing it at the forefront of next-generation memory solutions. In terms of applications, MRAM can seamlessly integrate into both consumer and industrial products where durable and fast data handling is essential. Whether used in wearables, IoT devices, or advanced automotive systems, the benefits of MRAM’s speed and durability cannot be overstated. As MRAM technology continues to evolve, the memory is set to replace or supplement other forms of non-volatile storage, providing industries with greater design flexibility and enhanced performance outputs. DXCorr continues to refine MRAM technology to address emerging technological needs, reflecting a commitment to delivering memory solutions that align with future innovations. With their deep expertise, the memory units they produce not only focus on performance metrics but are also engineered for easy integration, ensuring they meet diverse technological requirements while optimizing overall system efficiency.
Everspin's MRAM designed for radiation-hard markets is pivotal for applications in aerospace and defense sectors, where data integrity is crucial amidst high-radiation environments. This MRAM technology assures stability and reliability in conditions typical of outer space, offering trusted data storage and retrieval. With radiation-hardened properties, these MRAM solutions are crafted to withstand cosmic forces that could disrupt or damage conventional electronic components. This resilience ensures critical data remains intact and accessible, validating its use in satellite communications and space explorations where performance and dependability are non-negotiable. By coupling high endurance memory with radiation-resistant capabilities, Everspin’s MRAM for radiation-hard markets delivers an exceptional balance of performance and protection. It stands as a reliable choice for organizations operating in the most challenging environments, securing data integrity and longevity even in the harshest of conditions.
Everspin’s xSPI product family offers a novel memory solution tailored for the evolving needs of the industrial IoT and embedded systems markets. Based on the expanded Serial Peripheral Interface, a cutting-edge JEDEC standard, the xSPI line is engineered to deliver remarkable read and write speeds with minimal latency. Operating at clock frequencies reaching up to 200 MHz, these devices utilize multiple I/O interfaces for enhanced data throughput, making them ideal for applications ranging from process control to automotive systems. Furthermore, the xSPI memory leverages Everspin’s proprietary STT MRAM technology to integrate high-speed SPI compatibility with the added benefit of persistent memory. These devices are crafted to replace legacy memory solutions like SRAM and NOR flash, providing an efficient, universal memory option that facilitates seamless integration into existing architectures. By offering a single power supply operation and remarkable data rates, the xSPI series is poised to support next-gen innovations in automation and industrial electronics.
Everspin's Parallel Interface MRAM stands as a versatile solution for those industries seeking reliable and fast-performing memory technology. Designed with a focus on rapid data storage and retrieval, this MRAM variant ensures optimal performance, making it a fitting choice for varied high-demand applications. The architecture of the Parallel Interface MRAM allows for unconventionally fast data transactions by leveraging a multi-line interface that facilitates extensive parallel processing. This results in quicker execution times and enhanced system efficiency, crucial for applications in sectors like medical and industrial automation, where timely data handling is critical. Providing non-volatile data storage, this technology minimizes the risks of data loss during power outages, making it invaluable for systems where uptime is crucial. With its robust design, Everspin’s technology pledges extended endurance and consistent performance, solidifying its place as a trusted solution in memory storage technology for real-world applications.
The Serial Peripheral Interface MRAM by Everspin is tailored for those applications necessitating streamlined data flows within compact systems. Its use of the Serial Peripheral Interface standard allows for simplified connectivity and lower pin counts, advantageous in designs with stringent space and integration constraints. Renowned for its rapid data exchange capabilities, the SPI MRAM facilitates both read and write operations at rates that ensure system responsiveness and reliability. Additionally, its resilience to data loss amidst power disruptions further cements its utility in critical applications where data persistence is paramount. Beyond performance, Everspin’s SPI MRAM exhibits remarkable compatibility with various electronic designs, facilitating seamless integration with existing technological infrastructure. This positions it as an ideal choice for enterprises looking to enhance reliability and speed without sacrificing space or efficiency.
SLL's Modular PHY Type 01 Suite is a PVT aware, foundry and process agnostic, PHY for use with most single-ended LVCMOS protocols up to 400 MHz DDR. The PHY has a highly modular architecture that supports x1, x4, x8, and x16 data paths. Its has process-voltage-temperature (PVT) controls that are suitable for use in hard realtime systems (zero timing interference on PVT adjustments). The PHY includes a full standard cell library abstraction. The PHY also offers >1000 configurable options at compile time, enabling coarse grain capabilities such as pin-level deskew to be enabled/disabled, along with precise fine-grain control of mapping of RTL to gates through various data paths. It supports a range of protocols such as SPI, QSPI, xSPI, eMMC, .. and allows run-time configuration via an APB3 control port. It is designed to support easy place-and-route in a broad range of customer designs.
Spin-transfer Torque MRAM (STT-MRAM) by Everspin is cutting-edge technology addressing the increasing need for scalable and high-speed memory solutions. Utilizing the phenomenon of spin-transfer torque, it revolutionizes magnetic state transitions within a magnetic tunnel junction, significantly reducing switching energy compared to traditional methods. STT-MRAM is built to offer high-density memory capabilities, along with prolonged data retention and excellent endurance, which are vital for data-heavy applications. It stands out in environments demanding energy-efficient yet powerful memory operations, making it perfect for enterprise storage systems and data centers looking for persistent memory solutions. This technology also extends its reach to applications across industrial IoT and embedded systems, combining the attributes of non-volatility, speed, and scalability. Everspin’s STT-MRAM is versatile, offering JEDEC-standard interfaces and expanded operational temperature ranges, allowing for scalable deployments in diverse industry sectors.
The DDR solutions from KNiulink include advanced architecture and technology designed to deliver high performance and low power consumption solutions in the DDR3/4/5 and LPDDR2/3/4/4x/5 families. These IP cores are tailored to cope with the increasing demands of modern applications that require high bandwidth and strong data integrity. The DDR IP offerings encompass a wide range of possibilities for embedded systems and other demanding applications, ensuring efficiency and performance across various industries.
Weebit Nano's Discrete ReRAM chips represent a leap in non-volatile memory technology tailored for diverse standalone applications. Targeted at specific sectors demanding high reliability and performance, these chips serve critical functions in high-stress environments. With their reduced power needs and excellent endurance, the discrete ReRAM products cater well to the memory requirements of consumer electronics, industrial modules, and more specialized high-tech applications. This discrete memory technology ensures next-level operational robustness, even under varying environmental conditions. By utilizing a structure that comes with inherent design simplicity, the chips offer eco-friendly benefits and are pressingly small yet performant, enabling them to be integrated into a multitude of independent devices seamlessly. Their low power operation bolsters battery life in applications where power efficiency is paramount. Offering an answer to the limitations of scaling and efficiency seen in traditional flash memory technology, these ReRAM chips stand out as a worthy successor in the demanding semiconductor landscape. By focusing on innovation and reliability, Weebit Nano carves a niche in developing standalone memory solutions that promise longevity and performance without sacrificing environmental considerations.
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