All IPs > Memory Controller & PHY > SRAM Controller
In the expansive world of semiconductor technology, SRAM Controller semiconductor IPs play a crucial role in managing static random access memory (SRAM). SRAM Controllers are critical components in a wide array of electronic systems due to their speed and efficiency in data access and storage operations. Whether in consumer electronics, telecommunications, or industrial applications, these controllers ensure that memory operations are optimized for maximum performance. At Silicon Hub, we offer an expansive selection of SRAM Controller IPs tailored to handle diverse computational needs.
SRAM Controllers are pivotal in connecting processors and SRAM memory blocks. They facilitate seamless communication between these components, ensuring that data is transferred quickly and efficiently. This capability is particularly crucial in applications that require real-time data processing and high-speed performance, such as gaming consoles, networking equipment, and advanced automotive systems. By integrating SRAM Controller IPs, designers can achieve reduced latency and enhanced system throughput, which are essential for maintaining competitiveness in today’s tech-driven market.
Apart from the impressive performance features, these semiconductor IP solutions are also designed with flexibility and scalability in mind. Users can select IPs that offer customizable features to cater to specific application requirements, such as varying memory sizes and bandwidths. This adaptability makes SRAM Controller IPs suitable for cutting-edge applications, including artificial intelligence (AI) devices, IoT technologies, and mobile computing. Furthermore, these controllers often come equipped with error correction capabilities, adding another layer of reliability to critical systems.
At Silicon Hub, our SRAM Controller semiconductor IP portfolio is carefully curated to meet the highest industry standards. Whether you are designing compact systems for power-sensitive environments or high-end servers requiring massive bandwidth, our selection offers robust and versatile solutions. Explore our SRAM Controller IPs to find the perfect match for your project requirements and ensure your next innovation harnesses the full potential of efficient and effective memory management.
CrossBar's ReRAM Memory brings a revolutionary shift in the non-volatile memory sector, designed with a straightforward yet efficient three-layer structure. Comprising a top electrode, a switching medium, and a bottom electrode, ReRAM holds vast potential as a multiple-time programmable memory solution. Leveraging the resistive switching mechanism, the technology excels in meter-scale data storage applications, integrating seamlessly into AI-driven, IoT, and secure computing realities. The patented ReRAM technology is distinguished by its ability to perform at peak efficiency with notable read and write speeds, making it a suitable candidate for future-facing chip architectures that require swift, wide-ranging memory capabilities. Unprecedented in its energy-saving capabilities, CrossBar's ReRAM slashes energy consumption by up to 5 times compared to eFlash and offers substantial improvements over NAND and SPI Flash memories. Coupled with exceptional read latencies of around 20 nanoseconds and write times of approximately 12 microseconds, the memory technology outperforms existing solutions, enhancing system responsiveness and user experiences. Its high-density memory configurations provide terabyte-scale storage with minimal physical footprint, ensuring effective integration into cutting-edge devices and systems. Moreover, ReRAM's design permits its use within traditional CMOS manufacturing processes, enabling scalable, stackable arrays. This adaptability ensures that suppliers can integrate these memory solutions at various stages of semiconductor production, from standalone memory chips to embedded roles within complex system-on-chip designs. The inherent simplicity, combined with remarkable performance characteristics, positions ReRAM Memory as a key player in the advancement of secure, high-density computing.
The AXI4 DMA Controller is a highly versatile IP core that supports multi-channel data transfers, ranging from 1 to 16 channels, depending on system requirements. Optimized for high throughput, this controller excels in transferring both small and large data sets effectively. It features independent DMA Read and Write Controllers for enhanced data handling with options for FIFO transfers to a diverse array of memory and peripheral configurations. This IP core offers significant flexibility with its programmable burst sizes, supporting up to 256 beats and adhering to critical boundary crossings in the AXI specification.
Toggle MRAM technology from Everspin facilitates reliable non-volatile memory solutions ideal for high-performance, demanding environments. Known for its durability and speed, Toggle MRAM provides solutions that bridge the gap between volatile and solid-state storage. This technology is particularly useful for applications requiring fast data retention and retrieval, ensuring integrity even in power failure scenarios. Due to its robust framework, Toggle MRAM has proven indispensable in industries such as aerospace, where the reliability of data storage can be crucial. The non-volatility offers the capability to store data even when powered off, a feature much appreciated in dedicated electronic systems and embedded applications. Furthermore, Toggle MRAM supports a myriad of interfaces, catering to broad industrial and commercial needs. Its architecture ensures it remains versatile and adaptable to continuous technological advancements, making it a future-proof solution for various applications. This blend of performance, reliability, and adaptability makes Toggle MRAM a cornerstone technology in Everspin's suite.
Revolutionizing SoC power delivery, the Aeonic Power family integrates state-of-the-art on-die voltage regulation capabilities. Its design supports energy and BOM optimization through a highly configurable framework that addresses a range of power delivery needs. Notably, Aeonic Power offers unprecedented telemetry oriented around Power Delivery Networks (PDN). This functionality is critical for gaining insights into SoC power behavior, providing capabilities for real-time monitoring and performance enhancement. This integration serves to reduce energy consumption through dynamic voltage and frequency scaling (DVFS) and virtual power islands. Flexible in application, Aeonic Power is ideal for handling the power complexities of chiplets and die-to-die interfaces. Its robustness and programmability aspire to suppress noise and harmonize power distribution across various SoC environments, facilitating reliable power management.
TwinBit Gen-1 is a sophisticated embedded memory solution designed for a wide range from 180nm to 55nm process nodes, featuring a memory density that spans from a minimum of 64 bits to a maximum of 512K bits. This IP is ideal for high-endurance applications, offering more than 10,000 program and erase cycles, which makes it a perfect fit for products requiring frequent updates. The technology is implemented within CMOS logic processes without necessitating additional masks or process steps, thereby streamlining its adoption across varied manufacturing nodes. TwinBit Gen-1 is engineered to support low-power and low-voltage operations, making it particularly suitable for IoT devices, microcontroller-based systems, and FPGA configurations where power efficiency is vital. Its wide application scope includes integration into products with field-rewritable firmware and security codes, as well as analog trimming applications. TwinBit Gen-1's built-in test circuits provide a stress-free testing environment, ensuring seamless integration and deployment.
EverOn is a single-port SRAM IP that offers extraordinary power savings, with up to an 80% reduction in dynamic consumption and a 75% decrease in static power. On a 40ULP bulk CMOS process, EverOn supports an operating voltage starting as low as 0.6V, setting records in operational efficiency within a broad voltage range up to 1.21V. This capability allows for new potential in wearable and IoT technologies. The IP's ULV compiler supports a broad set of memory configurations and is designed to be fully adaptable to modern SoC performance requirements, featuring several operational modes that optimize battery life and system performance based on use case needs.
CrossBar's ReRAM IP Cores present a sophisticated solution for enhancing embedded NVM within Microcontroller Units (MCUs) and System-on-Chip (SoC) architectures. Designed to work with advanced semiconductors and ASIC (Application-Specific Integrated Circuit) designs, these cores offer efficient integration, performance enhancement, and reduced energy consumption. The technology seeks to equip contemporary and next-generation chip designs with high-speed, non-volatile memory, enabling faster computation and data handling. Targeting the unique needs of IoT, mobile computing, and consumer electronics, the ReRAM IP Cores deliver scalable memory solutions that exceed traditional flash memory limits. These cores are built to be stackable and compatible with existing process nodes, highlighting their versatility. Furthermore, the integration of ReRAM technology ensures improved energy efficiency, with the added benefit of low latency data access—a critical factor for real-time applications and processing. These IP cores provide a seamless route to incorporating high-performance ReRAM into chips without major redesigns or adjustments. As the demand for seamless, secure data processing grows, this technology enables manufacturers and designers to aptly meet the challenges presented by ever-evolving digital landscapes. By minimizing energy usage while maximizing performance capabilities, these IP cores hold potential for transformative applications in high-speed, secure data processing environments.
Secure OTP by PUFsecurity offers a tamperproof data storage solution designed for the next generation of secure memory needs. It is an enhanced anti-fuse OTP memory that provides secure storage for key data across various forms, ensuring that data in transit, use, or rest remains protected. This technology integrates physical macros, a digital RTL controller, and a resilient anti-tamper shell to guard against hardware attacks. As IoT devices become increasingly susceptible to early-stage attacks, Secure OTP presents a reliable means to safely store sensitive data such as keys and boot code. By transitioning to this tamperproof storage format, devices can effectively mitigate vulnerabilities inherent in legacy storage systems, fortifying data security at the hardware level.
YouDDR is a comprehensive technology encompassing not only the DDR controller, PHY, and I/O but also features specially developed tuning and testing software. It provides a complete subsystem solution to address the complex needs of DDR memory interfaces. The integrated approach allows for cohesive synchronization between the controller and PHY, optimizing performance and reliability. The YouDDR technology ensures seamless integration into a variety of platforms, supporting a broad range of applications from simple consumer electronics to advanced computing systems. By offering enhanced tuning capabilities, it allows developers to fine-tune performance metrics, ensuring that systems can operate within their optimal performance windows. Developers utilizing YouDDR benefit from a thoroughly tested and verified subsystem that significantly simplifies the design cycle. This not only reduces development time but also enhances the likelihood of first-pass success, providing a competitive edge in manufacturing efficiency and product launch speed.
The NVMe Streamer from MLE is engineered to optimize the handling of next-generation storage protocols, specifically through the use of NVMe technology, which offers substantial enhancements in data performance. This IP aggressively leverages FPGA capabilities to improve storage acceleration for applications needing computational storage, as well as high-speed data capture and processing. Designed for data-driven environments, the NVMe Streamer allows seamless operation in various data handling tasks. Its structure ensures the rapid execution of storage operations, thereby reducing latency and increasing throughput. By integrating such a solution, users experience higher storage efficiency and performance, directly impacting the speed and reliability of their data systems. Ideal for data centers and enterprise storage solutions, this IP stands as a powerful tool for handling emerging data storage challenges. Its ability to pair abstract storage management with high-speed hardware interfaces enables users to meet the growing demands of data connectivity and storage seamlessly. The NVMe Streamer represents MLE's commitment to pushing the boundaries in storage acceleration technology, offering a modular and scalable approach tailored to modern computing needs.
The Zhenyue 510 SSD Controller represents a pivotal advancement in solid-state drive technology, tailored to meet the rigorous demands of enterprise-grade storage solutions. It leverages state-of-the-art technology to deliver exceptional data throughput and reliability, ensuring swift data access and enhanced storage efficiency. This controller is engineered to minimize latency, making it highly suitable for environments where data speed and reliability are crucial, such as cloud computing and enterprise data centers. With the ability to handle large volumes of data effortlessly, the Zhenyue 510 SSD Controller sets new benchmarks for performance and energy efficiency in storage solutions.
Floadia's LEE Flash G2 transcends standard flash memory by blending the qualities of logic and memory. This provides a dual benefit of non-volatile performance with logic-level operation, achieved through its unique tri-gate transistor architecture. The G2 cell combines a SONOS transistor with switching transistors, offering high-speed, non-volatile SRAM capabilities. The G2 memory's design addresses one of the major challenges in memory technology: reducing power consumption. By employing a programming current that is substantially lower than conventional floating gate NVMs, it considerably lowers power demands. This technology allows for the memory and logic circuits to be connected directly, enabling more efficient chip architectures. Additionally, the LEE Flash G2 supports a novel application where it can function as Non-Volatile SRAM (NV-SRAM). This combination eliminates the need for dedicated flash blocks, thereby streamlining the microcontroller architecture and enabling rapid wake-up or sleep modes. Such a configuration enhances the overall efficiency of systems, especially in complex SOC and FPGA designs.
Analog Bits' sensor solutions are designed to ensure high precision in monitoring and adjusting system parameters. These include temperature sensors, voltage monitors, and power integrity sensors which are critical for maintaining optimal operational conditions within semiconductor devices. With a focus on high accuracy and reliability, these sensors are integrated seamlessly into larger mixed-signal environments. They serve various applications from ensuring power supply stability to monitoring thermal conditions, which in turn, safeguard against potential overheating and electrical failures. These sensor IPs are particularly valuable in next-generation process nodes such as TSMC's N5 and below, providing intelligent systems with the insights necessary for adapting to changing conditions. By enhancing system durability and performance, these sensors play a central role in advancing energy-efficient technologies in industries ranging from automotive to consumer electronics.
PermSRAM is a dynamic memory macro known for its adaptability and efficiency. It is built on a foundry standard CMOS platform and supports a broad spectrum of process nodes ranging from 180nm to 28nm and beyond. This memory solution offers various functionalities, such as one-time programmable ROM and a pseudo multi-time programmable ROM, featuring a multi-page configuration. The memory sizes available span from 64 bits to 512K bits, integrating a non-rewritable hardware safety lock for the secure storage of critical security codes. PermSRAM is well-regarded for its consistent performance, offering high reliability and yielding stable results in various conditions. This makes it particularly suitable for applications like security code storage, program storage, and analog trimming. The technology is designed to be tamper-resistant, utilizing a charge trap memory mechanism that ensures data security. Furthermore, PermSRAM operates without the need for a charge pump during read operations, simplifying its integration into different systems. Beyond these technical features, PermSRAM includes a built-in self-test circuit, which facilitates stress-free testing procedures. It supports conventional testing equipment and is engineered to perform reliably in automotive-grade environments, even under high temperatures exceeding 150°C. With its minimal silicon area usage and robust security features, PermSRAM is a versatile choice for a wide range of industrial applications.
TwinBit Gen-2 marks an advanced step in NSCore's non-volatile memory offerings, designed for process nodes from 40nm to 22nm and potentially beyond. Like its predecessor, Gen-2 integrates smoothly into existing manufacturing processes without the need for additional masks or process alterations. This IP is enhanced by its use of the novel Pch Schottky Non-Volatile Memory Cell, which is engineered to optimize for ultra-low-power operations. A key attribute of TwinBit Gen-2 is its capacity to support high-density non-volatile memory demands with improved energy efficiency, making it apt for devices where power consumption is pivotal. Its hot carrier injection control via cell bias, paired with its unique memory cell configuration, facilitates versatile memory operations that are fundamental in modern CMOS technology. Applications for TwinBit Gen-2 encompass high-demand fields such as embedded system design and battery-sensitive environments. Its streamlined design and process adaptation capabilities maintain NSCore's commitment to delivering state-of-the-art memory technologies that meet stringent energy and performance standards.
Offering a zero additional mask solution, LEE Flash ZT stands for a zero-technology-cost addition to Floadia’s flash memory repertoire. It is particularly valued for its minimal impact on manufacturing processes while maintaining robust performance attributes inherent to Floadia's memory products. This memory eliminates additional mask requirements in the production process, which not only reduces costs but also simplifies the manufacturing workflow. The ZT model effectively retains the essential features of robustness and high reliability, necessary for modern semiconductor applications, through its efficient architecture. In terms of functionality, the ZT adheres to high standards of charge retention and endurance, similar to other products in Floadia's lineup. With this design choice, Floadia ensures that the technology maintains the integrity and reliability expected from advanced embedded memory solutions, making it suitable for a wide array of industrial applications.
The LEE Flash G1 from Floadia is designed as a cost-effective SONOS technology solution. This nonvolatile memory offers remarkable cost efficiency, employing a low-cost process that requires minimal additional masks, thus reducing fabrication complexity. The design ensures compatibility with existing semiconductor processes, making it economical without sacrificing quality or performance. This flash memory is built on a robust SONOS architecture, which stands out for its high reliability, a crucial factor in memory retention and endurance. The electric charge retention mechanism in SONOS is distinct from the traditional floating gate charge storage, offering superior reliability due to its resistance to leakage through defects. By utilizing Fowler Nordheim (FN) tunneling, the G1 guarantees minimal oxide damage and sustains a high level of performance even after many cycles. Additionally, the G1's design focuses on simplifying manufacturing processes by using common materials, allowing for seamless integration into existing foundry workflows. This ease of implementation, combined with its robustness and low power requirements, makes the LEE Flash G1 a key product in high-demand, cost-sensitive applications.
LEE Fuse ZA from Floadia offers a unique approach with its zero additional mask anti-fuse memory technology. Designed for one-time programmable (OTP) applications, this memory type is cost-efficient and easily adaptable to existing manufacturing processes without requiring additional masks. The ZA fuse is characterized by its reliable anti-fuse mechanism, providing secure data retention. It excels in applications requiring a permanent programming solution and offers high endurance due to its robust design. By eliminating the need for complex mask layers, the LEE Fuse ZA significantly cuts down production costs while maintaining superior performance. Its compatibility with standard CMOS processes further underscores its suitability for various implementations where cost efficiency and reliability are paramount. The design guarantees effective fuse operation, making the LEE Fuse ZA a popular choice for applications in diverse sectors needing a robust OTP solution.
CodaCache Last-Level Cache is an advanced, shared cache solution specifically designed to minimize memory latency and boost SoC performance. Its configurable nature allows it to be tailored to specific design needs, optimizing data flow and enhancing power efficiency across the chip. This cache helps overcome common SoC challenges related to timing closure, performance, and layout congestion by providing a flexible caching architecture that ensures effective data management and reliable operations. Its role in optimizing memory hierarchy enhances computational speeds and system reliability. CodaCache is particularly beneficial for applications that require rapid access to large data sets, ensuring that power consumption is minimized while maintaining high performance standards. Its versatility and efficiency make it a top choice for industries striving for high data throughput and low latency operations.
Tower Semiconductor's non-volatile memory solutions leverage cutting-edge design to enhance data retention and simplify integration within various devices. The solutions include advanced Y-Flash and e-Fuse technologies, offering reliable data storage options that retain information without a constant power supply. This makes them ideal for applications requiring persistent data, ranging from consumer electronics to critical industrial controls. The NVM solutions are designed to offer high endurance and retention periods, granting devices the capability to operate effectively across diverse environmental conditions. Y-Flash supports fast write and erase times, while e-Fuse enables secure, permanent programming options, prototyping a versatile memory solution suitable for field programming and personalization. In addition to their technological sophistication, these solutions are supported by a comprehensive suite of design resources including detailed libraries and validation data. This ensures seamless integration with existing architectures, allowing designers to rapidly bring enhancements to market. As such, Tower Semiconductor's NVM offerings signify a blend of reliability, adaptability, and innovation in modern data storage technology.
DRAM memory modules from Avant Technology are engineered to meet the demands of applications requiring both speed and large capacity. Known for their rapid data access and storage capabilities, DRAM modules are indispensable in gaming, point-of-sale systems, and medical equipment where quick data retrieval is essential. Avant's DRAM modules adhere to JEDEC standards and offer a variety of configurations like UDIMM, SODIMM, and ECC DIMM, catering to both industrial and consumer requirements. These modules are designed for high performance, supporting interfaces like DDR3, DDR4, and DDR5, which are critical for maintaining system efficiency and reliability. Designed to operate in diverse temperature ranges, Avant’s DRAM solutions can handle both industrial and commercial environments. Whether for gaming consoles or medical devices, these memory modules provide the necessary bandwidth and low power consumption needed for high-demand tasks.
SuperFlash® Technology is built on the foundation of a proprietary split-gate Flash memory cell, which offers a robust, cost-effective, and high-performance solution for System-on-Chip (SoC) functionalities. The technology excels in maintaining its core structure and operating parameters due to its simple array architecture, enhancing its reliability. Since its inception in 1992, SuperFlash® memory has proven its capability through high endurance for write cycles, excellent data retention, and consistent performance under high temperatures. This technology's design simplifies integration while offering compatibility with standard silicon CMOS processes and scalability from 1 micron to 110 nm nodes, ensuring its adaptability across manufacturing processes.
The NuRAM Low Power Memory represents a state-of-the-art memory solution utilizing advanced MRAM technology. Engineered to provide rapid access times and extremely low leakage power, NuRAM is significantly more efficient in terms of cell area compared to traditional SRAM, being up to 2.5 times smaller. This makes it an ideal replacement for on-chip SRAM or embedded Flash, particularly in power-sensitive environments like AI or edge applications. The emphasis on optimizing power consumption makes NuRAM an attractive choice for enhancing the performance of xPU or ASIC designs. As modern applications demand higher efficiency, NuRAM stands out by offering crucial improvements in power management without sacrificing speed or stability. The technology offers a compelling choice for those seeking to upgrade their current systems with memory solutions that extend battery life and deliver impressive performance. NuRAM is particularly beneficial in environments where minimizing power usage is critical while maintaining high-speed operations. This makes it a preferred choice for applications ranging from wearables to high-performance computing at the edge.
Designed to scale effectively with the growing needs for high-volume data storage, CrossBar's ReRAM IP Cores for High-Density Data Storage offer clients the ability to manage extensive datasets with ease. The cores excel in providing high-speed data access and retrieval capabilities, making them an ideal choice for data centers, AI infrastructure, and complex analytics platforms. These cores support dense data storage configurations within devices, far surpassing the performance specifications of traditional memory options. CrossBar's ReRAM cores offer significant energy savings in storage operations, enabling data centers to drastically reduce power consumption while increasing throughput and efficiency. This green approach to data storage not only enhances computational performance but also aligns with global sustainability efforts to lower energy expenditure. With high-density capabilities, the ReRAM cores play a critical role in optimizing large-scale data handling and facilitate emerging trends like real-time analytics and advanced machine learning algorithms. Integrated into existing infrastructures, these ReRAM cores transcend traditional memory solutions. The technology's flexibility allows for customization, accommodating varied client needs and extending beyond standard operational limitations. Whether deployed in cloud services, enterprise data warehousing, or sophisticated AI training models, CrossBar's ReRAM cores ensure robust performance, reliability, and scalability in handling complex storage challenges.
The SmartMem Subsystem is designed to enhance memory functionality through a synthesisable and configurable architecture. This memory subsystem significantly boosts power efficiencies and improves both performance and endurance. Not limited to just Numem's own products, it can easily interface with other high-performance MRAMs, RRAM, and Flash technologies, offering versatility across different hardware needs. Built with Numem's thorough memory expertise and innovative patents, the SmartMem Subsystem delivers MRAM performance that rivals SRAM, characterized by much lower standby power. Its intelligent power management system controls MRAM’s non-volatile nature for ultra-efficient operation, making it robust against endurance challenges while seamlessly integrating into varied systems, whether in edge devices or expansive data centers. The subsystem supports software-defined scalability, which negates the necessity for new hardware designs. This makes it an excellent choice for future-proofing memory solutions in AI workloads, ensuring agility and adaptability across rapid advancements in AI applications.
MiniMiser is notable for its versatile multi-port register file architecture that caters to both high-performance and low-energy consumption demands. This architecture is not tied to a specific foundry bit cell, granting it high adaptability and direct system logic integration, which is crucial for processing in complex devices like wearables with integrated AI capabilities. MiniMiser innovatively minimizes power consumption by over 50%, further extending device operating windows and presenting a fresh approach to balancing power efficiency against computational needs.
The I-fuse technology from Attopsemi is a revolutionary OTP memory design characterized by its non-explosive action, circumventing the limitations of traditional anti-fuse technology. I-fuse is crafted without requiring specialized masks, utilizing standard logic design processes, allowing for broad compatibility across various tech platforms. Operating across a substantial spectrum from 0.7 µm to 22 nm, it promises exceptional reliability and efficiency, offering higher testability and competitive advantages in size and power use. I-fuse stands out due to its scalability, adaptability for varied applications, and compliance with the AEC-Q100 Grade 0 specification, which makes it robust enough for applications where reliability can’t be compromised. This OTP technology provides enhanced flexibility and precision, especially in automotive and industrial settings. It leverages Attopsemi's extensive patent portfolio and production experience, incorporating the company's 90+ patents into its design principles. With the shipment of over 10,000 wafers per month, I-fuse has demonstrated its practical use and benefits across hundreds of enterprises globally, performing with no reported failures and ensuring a lasting footprint in the market.
Spectral MemoryIP offers a comprehensive range of silicon-proven, high-density, low-power Static Random Access Memories. This robust library includes six standard compiler architectures such as Single Port & Dual Port SRAMs, ROM, and several variations of Register Files. Leveraging either foundry or bespoke bit cell designs crafted by Spectral, these memories combine high-density advantages with low power consumption and performance-oriented circuitry. This dual benefit ensures high-speed operations with minimal energy drain. A notable feature of Spectral MemoryIP is its adaptability, facilitated through the proprietary Memory Development Platform. Available in source code format, designers are empowered to tweak the designs, adopt them for new technologies, or enhance existing functionalities. These memories see widespread usage in standard CMOS process technologies and offer a rich array of features like varied power rails, multiple aspect ratios, and a multi-bank architecture. Spectral's innovative PVT monitoring technology, known as SpectralTrak, is integrated into each memory solution to ensure resilient operation under various environmental conditions. With a user-friendly memory compiler set, Spectral MemoryIP is optimized for diverse embedded storage demands delivering essential capabilities for chip manufacturers and designers.
The SRAM provided by DXCorr stands as a highly efficient and tailored solution, designed to address the demands of modern data storage. Known for its high-speed performance, this memory technology is pivotal in applications requiring rapid data access. SRAMS offer lower latency and power consumption compared to alternatives, making them ideal for high-performance computing and processing tasks. The customizability of DXCorr's SRAM allows for adaptations that suit specific requirements, reinforcing its use in a variety of technological domains. These memory components play an essential role in embedded systems, enhancing their operational capacity through rapid data retrieval and storage capabilities. With a focus on improving the speed and efficiency of these systems, DXCorr's SRAM offerings cater to the needs of sectors ranging from consumer electronics to industrial applications. Through meticulous design, DXCorr ensures that their SRAM modules maintain consistency and reliability under various operational conditions. The SRAM solutions are born from DXCorr's innovative approach to memory design, further facilitating integration into complex chip architectures. This customization potential means that each SRAM unit delivered can be fine-tuned to meet the power, performance, and area (PPA) requirements unique to its intended application, thereby optimizing the end-user experience across numerous platforms.
OPENEDGES offers a DDR Memory Controller which serves as a critical component in managing and optimizing memory operations in contemporary computing systems. This controller interfaces directly with DDR memory, orchestrating read and write operations while ensuring peak data throughput and minimal latency. The architecture of this memory controller is designed to manage various memory channels and is highly configurable, allowing for adaptations specific to customer requirements. By leveraging intelligent algorithms, it efficiently schedules task operations, thereby improving overall performance and reducing power consumption. The controller's versatility makes it ideal for systems that demand high data rates and reliable memory management. In addition to performance benefits, the OPENEDGES DDR Memory Controller also incorporates features to ensure system integrity and data protection. Error correction and detection protocols are embedded to safeguard against data corruption, which is critical for maintaining system reliability in mission-critical applications. Its capability to adapt to various DDR protocols also ensures future-proofing the system against evolving memory standards.
The DDR PHY by OPENEDGES is engineered to offer robust and efficient integration within advanced memory systems. This PHY facilitates seamless data transfer and communication between the processor and memory modules, thereby enhancing the overall system bandwidth and efficiency. It supports various DDR standards, which makes it adaptable to a wide range of applications and ensures optimal performance across different system architectures. Designed for next-generation computing systems, the DDR PHY emphasizes reduced power consumption without sacrificing speed or reliability. By implementing sophisticated signal processing capabilities, the design ensures minimal electromagnetic interference and maximized data integrity. This makes it particularly valuable for high-performance computing environments where speed and stability are critical. Moreover, OPENEDGES has ensured that their DDR PHY is scalable and flexible, making it suitable for integration with multiple platforms and technologies. As a result, it's an excellent choice for engineers seeking a versatile memory interface solution that can be tailored to specific project requirements or broader market needs.
NeoBit is an innovative silicon-based One-Time Programmable (OTP) memory technology from eMemory Technology Inc. It is a leading-edge solution designed to offer non-volatile storage capabilities within integrated circuits. NeoBit is essential for applications where permanent data storage is critical, providing a secure, reliable platform for storing configuration data, security keys, and other vital information. The technology behind NeoBit ensures that once data is programmed in the memory, it cannot be altered or erased, thus safeguarding information against unauthorized changes. This feature makes it especially valuable in security-sensitive areas such as digital rights management, encryption keys, and secure identity applications. NeoBit's reliability and robustness are what set it apart from conventional storage methods as it continues to perform optimally in varying operating conditions. Adopted widely across multiple industries, NeoBit caters to the growing need for data integrity and resilience in hostile environments. It offers a compact footprint and is highly customizable to suit specific application requirements, making it a preferred option for semiconductors needing embedded security and configuration options.
NeoFuse represents a state-of-the-art anti-fuse One-Time Programmable (OTP) silicon IP solution. This technology is a key offering of eMemory Technology Inc., focusing on providing an unparalleled level of permanence and security for data storage within electronic devices. Once data is written into the NeoFuse, it becomes impervious to any modification, providing an ideal solution for applications requiring unalterable data recording. NeoFuse's anti-fuse approach is particularly advantageous in environments demanding high-security measures. This includes sectors like aerospace, defense, and high-stakes commercial applications where the integrity of data is paramount. By leveraging advanced physical and electronic characteristics, NeoFuse offers robust performance, resisting tampering and environmental influences. Moreover, NeoFuse has been successfully utilized in various cutting-edge technologies such as AI and HPC, demonstrating reliability and resilience. Its compatibility with modern semiconductor processes ensures that NeoFuse-based applications can meet the rigorous requirements of today's data-critical operations while offering a scalable and future-proof solution for storing sensitive information securely.
NeoEE is a cutting-edge 100,000+ times programmable silicon IP solution from eMemory Technology Inc. Designed to provide extensive programmability for complex applications, this technology is particularly suited to systems requiring frequent and vast data updates without compromising reliability. In the landscape of modern electronics where adaptability is key, NeoEE offers unparalleled flexibility. Its advanced memory architecture supports numerous reprogramming cycles, making it ideal for dynamic environments in sectors like consumer electronics, telecommunications, and automotive solutions, where ongoing data revision is crucial. This high-frequency programming ability lends electronics the adaptability needed to evolve continuously alongside technological advancements. Apart from offering extensive programmability, NeoEE is crafted to withstand rigorous operational conditions, retaining its effectiveness and secure data handling even under duress. This positions NeoEE as a vital component in high-performance devices that necessitate enduring and reliable memory solutions, successfully bridging the gap between current needs and future technological expectations.
InnoSilicon's GDDR7 PHY and Controller is engineered to support the latest high-performance memory requirements. This solution is tailored to accommodate the escalating demands of data bandwidth-intensive applications such as gaming, virtual reality, and advanced computing processes. With its significant throughput capabilities, the GDDR7 module is a testament to InnoSilicon's commitment to advancing memory technologies. The GDDR7 PHY and Controller deliver robust performance while maintaining a balance between power efficiency and maximum data transfer speeds. Designed to integrate seamlessly into current computing architecture, it facilitates a smooth transition for organizations upgrading their memory systems. The IP is structured to handle intensive workloads, ensuring reliability and efficiency. With the focus on delivering high reliability and low latency, InnoSilicon's GDDR7 solution stands out in the competitive landscape of semiconductor interfaces. It is tailored for industries that require rapid processing capabilities without compromising on stability, making it ideal for cutting-edge applications seeking the latest technological advancements.
PowerMiser has been crafted to address the needs of devices that require minimal power consumption both in active and standby modes. This SRAM solution is silicon-proven and backed by sureCore's low-power design expertise, providing significant reductions in dynamic power usage. PowerMiser is particularly effective in 28nm FDSOI and similar advanced process nodes, achieving over 50% savings in dynamic power and showcasing reduced leakage power depending on operational conditions. The technology also offers a compiler that supports up to 576Kbit capacity with versatile configurations. Added features include innovative 'Bit Line Voltage Control' techniques that ensure optimal performance even at lower operating voltages. Enhanced sleep modes offer rapid wake-ups and deep sleep options for maximum power efficiency.
The SiC Schottky Diode by Nexperia is a specialized semiconductor component designed to facilitate efficient rectification in high-frequency applications. Unlike conventional diodes, this SiC variant offers significantly lower reverse recovery charges and power losses, boasting improved energy efficiency. It finds its applications in high-power systems such as photovoltaic inverters, power supplies, and electric vehicle chargers, where it contributes to improved system performance and reliability. With its ability to operate at higher temperatures without significant loss of efficiency or performance, this Schottky diode is a favorite in applications demanding compact size yet robust performance. Implementing SiC technology enhances the diode's thermal stability, which ensures consistent functionality in power management systems exposed to extreme conditions. Consequently, designers can achieve higher current ratings without increasing the component size or cost. The innovative design of the SiC Schottky Diode ensures minimal leakage current, which conserves energy and contributes to the overall cut down of electromagnetic interference. Its high switching speeds complement its energy-saving capabilities, making it a preferable choice for modern power electronics where efficiency and performance are pivotal. Designed with sustainability and performance in mind, this diode is an ideal fit for forward-thinking applications that value long-term efficiency improvements.
Embedded ReRAM is an advanced memory technology designed to significantly enhance the performance of integrated circuits (ICs) by providing fast, low-power, and reliable memory storage. This technology leverages resistive switching to store data, making it a highly efficient alternative to traditional non-volatile memory (NVM) solutions. Embedded ReRAM is particularly suitable for applications demanding large memory capacities and lower power usage, such as IoT devices, automotive electronics, and advanced AI systems. One of the most notable features of Embedded ReRAM is its scalability. As semiconductor processes continue to shrink, traditional NVMs face challenges in maintaining performance and reliability. Embedded ReRAM addresses these challenges by offering a scalable solution that can be integrated seamlessly into the latest process nodes. This capability ensures that devices utilizing Embedded ReRAM can maintain high performance and energy efficiency, even as they adopt more complex geometries. The technology is also distinguished by its endurance and retention characteristics, providing a robust storage solution that can withstand the demands of automotive and industrial applications. With the capability to operate under high-temperature conditions and rapid read/write cycles, Embedded ReRAM stands as a reliable choice for designers seeking to innovate in fields like neuromorphic computing and next-generation computing architectures.
NeoFlash is one of eMemory Technology Inc.'s leading products, distinguished by its ability to be programmed over 100,000 times. As a multipurpose silicon IP solution, it delivers high endurance and adaptability, suitable for applications where significant data rewrite is a regular requirement. Its robust and durable flash memory design is an asset to sectors requiring swift and frequent data updates. This technology fits seamlessly into applications across consumer electronics, automotive, and industrial sectors, providing the flexibility and reliability necessary to handle complex data storage needs. Such flash memory solutions are essential for dynamic environments where data integrity and consistency are crucial, enhancing both performance and efficiency. NeoFlash ensures that devices using this technology can rely on its lasting memory capability while supporting a wide range of functionalities and performance parameters. Its integration helps future-proof devices, accommodating a broad spectrum of technological advances and ensuring relevance in rapidly changing technological landscapes.
The Platform-Level Interrupt Controller (PLIC) by Roa Logic is a comprehensive solution for managing interrupt signals in sophisticated and large-scale computing environments. Compatible with RISC-V platforms, it is fully parameterised and offers an efficient means to handle and prioritize multiple interrupt sources. The PLIC's design emphasizes scalability and flexibility, allowing developers to adapt the module for a wide range of system requirements. The PLIC supports a configurable number of interrupt sources, each with customizable priority levels. This enables a tailored approach to the handling of critical interrupts, ensuring that high-priority tasks receive immediate attention. It serves as an essential building block for systems that demand precise and reliable interrupt management, making it indispensable in complex processor environments. With its easy integration into existing RISC-V platforms, the PLIC provides a seamless upgrade to traditional interrupt controllers. Its high level of adaptability ensures that it can be calibrated to complement specific system architectures, enhancing performance in varied operational scenarios.
Everspin's xSPI for Industrial IoT and Embedded Systems is a part of their innovative non-volatile memory solutions, utilizing the expanded Serial Peripheral Interface standard. Tailored for industrial applications, these MRAM products offer high speed and reliability, ensuring persistent data availability and integrity. The xSPI technology is designed with a focus on improved performance across various IoT and embedded systems, featuring a high-speed bus interface that supports intensive data transactions. Its compatibility with SPI makes it a versatile option for integrating into various systems, reducing the need for complex redesigns. With its robust architecture, the xSPI is ideal for use in harsh environments typical of industrial settings, where durable and reliable memory solutions are crucial. This product family offers flexibility, allowing for varying capacities and interfaces, making it an optimal solution for industrial automation, automotive, and other applications demanding high endurance memory solutions.
DXCorr's TCAM is a sophisticated memory solution that processes data at exceptional speeds by executing search operations natively in hardware. This kind of memory is particularly beneficial for network routers, switches, and other devices where rapid data retrieval is essential. With the ability to store data entries in ternary values (0, 1, and X for 'don't care'), TCAM excels in tasks like address lookup and pattern matching, making it indispensable in high-speed networking applications. By leveraging TCAM, systems can conduct parallel searches, providing a significant speed advantage over conventional search techniques. This capability ensures faster data processing, which is vital for maintaining efficient network throughput and performance. In addition, its ability to handle complex queries with ease broadens its utility beyond networking into database management and artificial intelligence. DXCorr's approach to TCAM involves optimizing both performance and efficiency. This entails reducing power consumption while maintaining speed and reliability, which are crucial for applications requiring constant data handling and high availability. Their TCAM solutions are designed to integrate seamlessly into existing architectures, providing flexibility and scalability to adapt to evolving technological demands.
DXCorr's MRAM technology offers a compelling alternative to conventional memories with its non-volatility, high endurance, and superior read/write speeds. The use of magnetic tunnel junctions allows MRAM to retain information even when power is lost, making it a crucial technology for applications that demand data persistence. Its quick access times and energy efficiency complement its robust nature, placing it at the forefront of next-generation memory solutions. In terms of applications, MRAM can seamlessly integrate into both consumer and industrial products where durable and fast data handling is essential. Whether used in wearables, IoT devices, or advanced automotive systems, the benefits of MRAM’s speed and durability cannot be overstated. As MRAM technology continues to evolve, the memory is set to replace or supplement other forms of non-volatile storage, providing industries with greater design flexibility and enhanced performance outputs. DXCorr continues to refine MRAM technology to address emerging technological needs, reflecting a commitment to delivering memory solutions that align with future innovations. With their deep expertise, the memory units they produce not only focus on performance metrics but are also engineered for easy integration, ensuring they meet diverse technological requirements while optimizing overall system efficiency.
The Quazar Quad Partition Rate Memories are sophisticated FPGA memory solutions designed to excel in applications requiring very high bandwidth and low latency. Each Quazar device replaces multiple QDR memory devices, streamlining system designs by minimizing board complexity and reducing costs while improving performance. This efficiency is achieved using high-capacity SRAM, which enhances the memory capacity connected to FPGAs. Designed to support high-speed data processing, the Quazar memories utilize four to sixteen serial SERDES connections, providing flexibility in configuration and system implementation. This not only simplifies board layout but also reduces debugging time and associated expenses. They are ideally suited for replacing traditional QDRs, thereby improving system cost-effectiveness without compromising on speed. The technology at the heart of these memories supports dual-port memory architectures, making them particularly advantageous for systems where asynchronous access and quick data retrieval are paramount. As such, the Quazar series is an ideal choice for applications ranging from high-capacity buffers to real-time high-frequency trading systems.
Spin-transfer Torque MRAM (STT-MRAM) from Everspin is an advanced non-volatile memory technology that offers high speed, endurance, and data retention capabilities. This type of MRAM leverages the spin-transfer torque effect to enable efficient writing of data, thus enhancing the durability and performance of the memory device. STT-MRAM is essential in environments where data consistency and availability are pivotal, such as data centers and enterprise infrastructure. It replaces traditional volatile memory types like DRAM in some applications, providing persistent data storage even without continuous power supply. Moreover, STT-MRAM eliminates the risks of data loss due to power interruptions, making it a favored choice in mission-critical applications. The technology is designed to integrate seamlessly with existing computing architectures, enhancing system-level performance and providing a robust solution to modern data storage challenges. With its high switching speed and low power consumption, STT-MRAM is positioned as a future-ready technology for a diverse array of industries.
NeoMTP stands out as a Multi-Time Programmable (MTP) silicon IP solution that provides flexibility and reliability for programming multiple data configurations over time. Engineered by eMemory Technology Inc., NeoMTP supports over 1,000 successful programming cycles, making it ideal for applications that require frequent updates or changes to stored data. This capability is especially beneficial in fields like automotive and industrial automation where configuration data, code revisions, or calibration settings may need to be updated repeatedly, without risking data degradation or loss. NeoMTP excels by offering durability and adaptability while maintaining the security and integrity of the stored data. By delivering strong performance under diverse operating conditions, NeoMTP ensures that devices equipped with this IP are primed for long-term use. Its robust design features contribute to the overall longevity and reliability of semiconductor devices in which it is embedded, making it a critical component in maintaining the operational efficiency of complex electronics systems.
Everspin’s SPI MRAM devices utilize the Serial Peripheral Interface to provide efficient, non-volatile memory solutions with a high degree of flexibility. These MRAM products are optimized for applications that require a compact form factor and energy-efficient operations, sustaining memory integrity in the face of power disruptions. SPI MRAM is characterized by its straightforward integration capabilities, which minimizes design complexity and facilitates faster time-to-market for various products. Its fast read/write speed, coupled with non-volatility, is particularly advantageous for applications in industrial control and consumer electronics, where quick data recovery and preservation are critical. This MRAM variant is configured to suit a range of operational environments, from low-energy IoT devices to more demanding industrial components. With its high endurance and reliability, SPI MRAM stands out as a cost-effective memory solution that boosts the efficiency and reliability of embedded systems.
Everspin’s Parallel Interface MRAM offers versatile memory solutions with a parallel bus interface, widely utilized in high-speed data processing environments. These MRAM products provide fast read/write capabilities, making them ideal for applications that demand swift data transactions and high reliability. One of the key advantages of Parallel Interface MRAM is its compatibility with standard SRAM, particularly in terms of pin architectures and interfaces, which allows for seamless integration into existing systems. The technology is engineered to perform robustly under different conditions, maintaining data integrity across multiple cycles and providing a high endurance solution that reduces the total cost of ownership. Its deployment in various industries such as defense and telecommunications underscores its versatility and effectiveness in real-world applications. With the parallel interface, the MRAM ensures high data throughput, contributing to improved operational efficiency and performance in critical applications worldwide.
Specially designed for radiation-hard markets, Everspin's MRAM solutions provide reliable memory options for space and military applications. These MRAM products ensure data integrity even under the challenging radiation conditions found in space. The technology prides itself on its resilience, offering non-volatile memory that isn’t susceptible to upsets commonly caused by radiation. This makes it an ideal option for satellite, aerospace, and other space-bound technologies requiring high reliability over extended periods. Radiation-hard MRAM by Everspin delivers performance akin to other volatile memory types but eliminates the need for constant power supply. It’s tailored for applications where data must endure harsh external factors while maintaining rapid access and operational efficiency.
SLL's Modular PHY Type 01 Suite is a PVT aware, foundry and process agnostic, PHY for use with most single-ended LVCMOS protocols up to 400 MHz DDR. The PHY has a highly modular architecture that supports x1, x4, x8, and x16 data paths. Its has process-voltage-temperature (PVT) controls that are suitable for use in hard realtime systems (zero timing interference on PVT adjustments). The PHY includes a full standard cell library abstraction. The PHY also offers >1000 configurable options at compile time, enabling coarse grain capabilities such as pin-level deskew to be enabled/disabled, along with precise fine-grain control of mapping of RTL to gates through various data paths. It supports a range of protocols such as SPI, QSPI, xSPI, eMMC, .. and allows run-time configuration via an APB3 control port. It is designed to support easy place-and-route in a broad range of customer designs.
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