All IPs > Memory Controller & PHY > SRAM Controller
In the expansive world of semiconductor technology, SRAM Controller semiconductor IPs play a crucial role in managing static random access memory (SRAM). SRAM Controllers are critical components in a wide array of electronic systems due to their speed and efficiency in data access and storage operations. Whether in consumer electronics, telecommunications, or industrial applications, these controllers ensure that memory operations are optimized for maximum performance. At Silicon Hub, we offer an expansive selection of SRAM Controller IPs tailored to handle diverse computational needs.
SRAM Controllers are pivotal in connecting processors and SRAM memory blocks. They facilitate seamless communication between these components, ensuring that data is transferred quickly and efficiently. This capability is particularly crucial in applications that require real-time data processing and high-speed performance, such as gaming consoles, networking equipment, and advanced automotive systems. By integrating SRAM Controller IPs, designers can achieve reduced latency and enhanced system throughput, which are essential for maintaining competitiveness in today’s tech-driven market.
Apart from the impressive performance features, these semiconductor IP solutions are also designed with flexibility and scalability in mind. Users can select IPs that offer customizable features to cater to specific application requirements, such as varying memory sizes and bandwidths. This adaptability makes SRAM Controller IPs suitable for cutting-edge applications, including artificial intelligence (AI) devices, IoT technologies, and mobile computing. Furthermore, these controllers often come equipped with error correction capabilities, adding another layer of reliability to critical systems.
At Silicon Hub, our SRAM Controller semiconductor IP portfolio is carefully curated to meet the highest industry standards. Whether you are designing compact systems for power-sensitive environments or high-end servers requiring massive bandwidth, our selection offers robust and versatile solutions. Explore our SRAM Controller IPs to find the perfect match for your project requirements and ensure your next innovation harnesses the full potential of efficient and effective memory management.
NRAM, or Nanotube-based Random Access Memory, represents a major breakthrough in memory technology by Nantero. It leverages the unique properties of carbon nanotubes, providing an innovative alternative to traditional memory technologies like DRAM and NAND. This technology is renowned for offering extraordinary speed, capable of matching DRAM speeds and being up to 100 times faster than NAND. What's particularly significant about NRAM is its nonvolatile nature, which means it retains data even when power is switched off, leading to devices with 'instant on' capabilities. Additionally, NRAM stands out due to its energy efficiency, often consuming no power in standby mode and requiring minimal energy during operation. This positions it perfectly to meet the energy-saving demands of green data centers, contributing to substantial reductions in electricity usage and carbon footprint. Furthermore, it offers a simple and cost-effective structural design that can be scaled down to below 5 nm, supporting multilayer and 3D configurations, which makes it versatile and ready for future memory scaling needs. NRAM’s robust design also ensures high endurance and environmental resistance, withstanding extreme conditions like heat, cold, and radiation, making it suitable for aerospace and other challenging applications. Coupled with its RadHard capabilities for secure data retention under adverse conditions, NRAM is designed to support critical infrastructure systems. Its integration does not necessitate specialized equipment, allowing for seamless manufacturing within existing CMOS fabs.
The YouDDR technology offered by Brite Semiconductor encompasses not just DDR controllers and PHY, but also I/O features and specialized software designed for tuning and testing. This forms a comprehensive subsystem delivering efficient data handling with robust performance for high-speed applications.<br><br>Designed with versatility, YouDDR is adaptable to cater to varied DDR technology demands, ensuring seamless integration in diverse electronic environments. Whether in consumer electronics or high-speed computing systems, it enables precise control and optimal function.<br><br>With additional tuning and testing software, the YouDDR system is engineered to maintain performance integrity across extensive operational ranges. It represents a complete solution, addressing every aspect from control to interface and verification.
The Aeonic Power family offers scalable on-die voltage regulation tailored to the power delivery needs of high-performance ICs and chiplets. Featuring a flexible architecture, Aeonic Power solutions enable energy optimization through per-core DVFS, static IR drop mitigation, and the creation of virtual power islands. These products provide observability and noise suppression capabilities, simplifying power distribution for die-to-die interfaces and facilitating enhanced PDN robustness. By integrating sophisticated telemetry, Aeonic Power empowers design teams with unparalleled insights into power behavior and optimizes the power distribution network for energy-efficient operations.
The AXI4 DMA Controller from Digital Blocks revolutionizes data management in System-on-Chip architectures through high-performance Direct Memory Access capabilities. Supporting a span of 1 to 16 channels, it handles data transfers between memory and peripherals with agility, ideal for both small and large datasets. Designed for high throughput, it includes a multi-channel architecture that can expand from 32 to up to 256 channels, demonstrating exceptional scalability for future data demands. Each channel within the DMA Controller operates independently with dedicated Read and Write Controllers, ensuring minimal overhead during transfers. It facilitates complex data flow configurations including scatter-gather linked-list data controls and comprehensive support for different burst modes within the AXI3 and AXI4 protocols. Its design incorporates advanced features that users can selectively enable to optimize silicon resource usage and cost efficiency. Additionally, it accommodates complex AXI4-Stream to memory-mapped interface transfers, making it versatile for a variety of applications, from high-speed data environments to embedded systems requiring optimized memory access and control.
The Zhenyue 510 SSD controller represents a breakthrough in enterprise-grade storage technology. This sophisticated controller is crafted to enhance SSD performance in demanding computing environments, offering speed and durability to enterprise data centers. It features state-of-the-art architectures tailored to meet the intense demands of continuous data inflows typical within server farms and cloud storage infrastructure. Combining advanced processing capabilities with custom algorithmic optimizations, the Zhenyue 510 delivers exceptional read and write cycles, ensuring high throughput and stable data handling. Its robust design not only manages high-capacity data storage efficiently but also ensures reliable data integrity through sophisticated error correction techniques and data management protocols. This SSD controller is designed with adaptability in mind, compatible with a wide range of NAND flash technologies, thus offering significant flexibility for various storage applications. Ideal for data-intensive tasks that require consistent performance, the Zhenyue 510 advances T-Head's position within the SSD industry by setting new standards for speed, efficiency, and dependability.
TwinBit Gen-1 is an embedded non-volatile memory solution designed for 180nm to 55nm CMOS logic processes. Known for its high endurance, TwinBit Gen-1 supports more than 10,000 program and erase cycles, making it exceptionally durable. This solution is easily integrated into advanced nodes without the need for additional masks or process alterations, and it spans a memory size range from 64 bits to 512K bits, suitable for applications like analog trimming and security key storage. TwinBit Gen-1 offers benefits such as minimal silicon area requirements and low power operations, making it perfect for automotive applications given its compliance with AEC-Q100 standards. Its built-in test circuits facilitate stress-free test environments, ensuring reliable performance across various operational scenarios.
CrossBar's ReRAM Memory technology introduces a revolutionary approach to non-volatile memory that transcends the limitations of traditional memory solutions. ReRAM, or Resistive RAM, distinguishes itself through its simple architectural design, enabling manufacturers to scale it down to sizes smaller than 10nm and integrate it seamlessly with existing logic processes in a single foundry. This advancement allows for unprecedented energy efficiency, with ReRAM consuming just 1/20th of the energy compared to traditional flash memory solutions, while also offering dramatically improved endurance and performance metrics. The scalability of ReRAM supports high-density memory applications, including its potential for 3D stacking, which allows terabytes of storage to be integrated on-chip. ReRAM excels in delivering low latency and high-speed operations, making it especially suitable for applications requiring rapid data access and processing, such as in data centers and IoT devices. Its robust performance characteristics make it an ideal solution for modern computing demands, offering both hard macros and architectural licenses depending on customer needs. Another key benefit of ReRAM is enhanced security, essential in applications ranging from automotive to secure computing. By providing low power consumption combined with high data integrity, ReRAM is positioned as a pivotal technology in future-proofing data storage solutions. It has proven to be a secure alternative to flash memory, with superior operational characteristics that address the diverse needs of contemporary electronic and computing environments.
The NVMe Streamer from MLE empowers next-generation storage solutions with its cutting-edge data streaming capabilities. NVMe technology, known for robust performance, is utilized here to achieve accelerated data processing and storage for critical applications. The NVMe Streamer provides high-speed connectivity, facilitating seamless data capture and record-keeping in high-bandwidth environments, such as cloud computing and data centers. With support for PCIe 3.0/4.0/5.0 standards, this IP core ensures compatibility with present and future hardware, fostering consistent and reliable performance across deployments. It acts as a pivotal component for computational storage and data movement, backing up extensive data processing with minimal latency and maximum throughput, essential for real-time operations and intensive data tasks. Design flexibility inherent in the NVMe Streamer allows it to be tailored to specific infrastructure needs, offering scalable solutions that can grow with technological advancements. This adaptability is key for organizations seeking to future-proof their storage capabilities in a fast-evolving digital landscape.
The SmartMem Subsystem is designed to enhance memory functionality through a synthesisable and configurable architecture. This memory subsystem significantly boosts power efficiencies and improves both performance and endurance. Not limited to just Numem's own products, it can easily interface with other high-performance MRAMs, RRAM, and Flash technologies, offering versatility across different hardware needs. Built with Numem's thorough memory expertise and innovative patents, the SmartMem Subsystem delivers MRAM performance that rivals SRAM, characterized by much lower standby power. Its intelligent power management system controls MRAM’s non-volatile nature for ultra-efficient operation, making it robust against endurance challenges while seamlessly integrating into varied systems, whether in edge devices or expansive data centers. The subsystem supports software-defined scalability, which negates the necessity for new hardware designs. This makes it an excellent choice for future-proofing memory solutions in AI workloads, ensuring agility and adaptability across rapid advancements in AI applications.
PermSRAM is a highly flexible non-volatile memory macro that functions on a foundry standard CMOS platform, suitable for process nodes ranging from 180nm to 28nm and beyond. It features a range of non-volatile memory capabilities, including a one-time programmable ROM and a pseudo multi-time PROM, with a multi-page configuration. The memory covers wide sizes from 64 bits to 512K bits and incorporates a non-rewritable hardware safety lock for secure code storage, offering robust security for sensitive data. This IP is ideal for applications such as security code storage, program storage, and analog trimming, thanks to its invisible charge trap memory mechanism and built-in self-test capabilities. PermSRAM can achieve automotive-grade data retention over high temperatures, making it a reliable choice for high-security applications.
Analog Bits specializes in innovative sensor solutions designed for precise process, voltage, and temperature (PVT) monitoring. Their advanced sensor IP is crucial in maintaining the stability and performance of semiconductor devices by ensuring accurate monitoring of critical parameters. These sensors are integrally designed to be compact, consuming minimal power while providing high accuracy necessary for efficient power delivery systems. They are silicon-proven at scales down to 5nm and are adaptable for a wide range of applications, from consumer electronics to automotive markets. By detecting voltage spikes or other anomalies, these sensors enhance security and operational efficiency. Their integration capability allows for seamless on-die deployment, empowering software-based load balancing to optimize energy consumption across various technology platforms.
The NuRAM Low Power Memory represents a state-of-the-art memory solution utilizing advanced MRAM technology. Engineered to provide rapid access times and extremely low leakage power, NuRAM is significantly more efficient in terms of cell area compared to traditional SRAM, being up to 2.5 times smaller. This makes it an ideal replacement for on-chip SRAM or embedded Flash, particularly in power-sensitive environments like AI or edge applications. The emphasis on optimizing power consumption makes NuRAM an attractive choice for enhancing the performance of xPU or ASIC designs. As modern applications demand higher efficiency, NuRAM stands out by offering crucial improvements in power management without sacrificing speed or stability. The technology offers a compelling choice for those seeking to upgrade their current systems with memory solutions that extend battery life and deliver impressive performance. NuRAM is particularly beneficial in environments where minimizing power usage is critical while maintaining high-speed operations. This makes it a preferred choice for applications ranging from wearables to high-performance computing at the edge.
I-fuse is an advanced one-time programming memory technology that features a non-explosive design. Unlike traditional anti-fuse approaches, I-fuse does not require a charge pump, which simplifies the process while enhancing reliability and performance. This technology is aimed at providing compact, highly efficient memory solutions, capable of functioning in a wide temperature range. The solution is fully qualified from 0.7 μm to 22 nm process nodes, making it versatile for a range of applications, including automotive, industrial, and medical use cases. It boasts features such as high reliability, minimal program and read voltage requirements, and low power consumption, making it a standout solution in the market. The innovative architecture of I-fuse enables easy testability and requires no redundancy. Attopsemi's commitment to quality and innovation is evident in the development of I-fuse, supported by over 90 patents. The technology has been widely adopted, incorporated into products by 150+ customers, and benefits from continuous updates and improvements that keep it at the cutting edge of semiconductor memory solutions.
Static Random-Access Memory (SRAM) developed by DXCorr Design is geared towards high performance and low power applications, ensuring fast access times and efficiency. SRAM is a key component in many electronic systems, offering rapid data access suitable for various cache applications and high-speed computing environments. DXCorr has fine-tuned its SRAM designs to eliminate bottlenecks associated with concurrent read and write operations, enhancing reliability and speed in dual-port configurations. The company's SRAM solutions are built upon years of expertise in custom circuit design, where meticulous transistor-level layout optimizations result in reduced access times and power consumption. Their approach allows for the seamless integration of SRAM modules in advanced system-on-chip (SoC) designs, enhancing overall system performance. Additionally, DXCorr's SRAM is customized for numerous use cases, aligning with the specific requirements of diverse industries and pushing forward the technology at process nodes as advanced as 2nm and 3nm. By providing solutions that are adaptable to various standard and custom process technologies, the company enables a broad range of applications in both consumer and industrial electronics. DXCorr's SRAMs stand out in the competitive market by virtue of their high density and efficient energy usage, catering to the growing demand for power-efficient memory components in modern digital devices.
EverOn is a groundbreaking Single Port Ultra Low Voltage SRAM IP that delivers exemplary dynamic and static power savings. It is particularly suited for IoT and wearable device markets, where energy efficiency and performance are both critically required. Silicon-proven on 40ULP BULK CMOS processes, EverOn brings forth a new paradigm in power savings, offering up to 80% reduction in dynamic power and 75% in static power. Operating in a broad voltage range from 0.6V to 1.21V, EverOn achieves record-setting operational capabilities with its pioneering cycle time dynamics. Boasting a 20MHz cycle time at the ultra-low 0.6V mark, scaling to 300MHz at its upper voltage threshold, this IP is instrumental in the development of future-facing applications. The ULV compiler supports flexible configurations, enabling tailor-fit solutions suiting specific system requirements. EverOn’s SMART-Assist technology allows for robust operation down to retention voltages, complimenting its ultra-low power profile with considerable system flexibility. Features include memory bank subdivision and advanced sleep modes, tuned for maximum energy efficiency. Such characteristics make EverOn a frontrunner for products needing extended operational times and robust battery longevity.
Providing cutting-edge memory technology, Tower Semiconductor's NVM solutions are pivotal for data storage needs across various electronic devices. These solutions offer reliable, long-term data retention, which is crucial for applications necessitating constant and secure storage, such as in automotive applications, industrial controls, and consumer electronics. Engineered for efficiency, NVM technology by Tower Semiconductor includes proprietary developments such as Y-Flash and e-Fuse technologies. These innovations provide enhanced performance for embedded memory tasks, ensuring stable and secure data management under various conditions. The technology is particularly important for applications where seamless operation is a necessity, notably in real-time data processing environments. NVM solutions from Tower Semiconductor underscore adaptability, supporting multiple functionalities while ensuring device compatibility and longevity. With their emphasis on streamlined integration, NVM technologies assist in reducing overall power consumption and enhancing the memory capabilities of modern devices, making them indispensable in the ever-evolving digital landscape.
TwinBit Gen-2 is an advanced non-volatile memory solution supporting 40nm to 22nm process nodes. This generation builds on the capabilities of Gen-1 by integrating a newly developed Pch Schottky Non-Volatile Memory Cell, which enables ultra-low-power operations and does not require additional masking steps or process modifications. TwinBit Gen-2's refined architecture allows for efficient energy management and high-density memory implementations, maintaining a compact footprint while providing robust data retention features. The IP supports a wide range of applications, including IoT devices and high-security environments that demand reliable, field-rewritable memory functionalities. With these enhancements, TwinBit Gen-2 represents a leap forward in meeting modern semiconductor memory needs.
Cache MX redefines SRAM capacity expansion with its proprietary compression technology, doubling the effective cache size while achieving 80% savings in area and power compared to traditional SRAM. Its deployment in memory-intensive applications helps to meet the rising demands for memory space without an increase in cost or energy usage. By effectively handling cache data, Cache MX ensures a seamless operation with better performance endpoints and energy efficiency, catering especially to high-performance data centers. This technology incorporates a hybrid approach that combines tried-and-tested compression methodologies with cutting-edge semiconductor advancements, enabling systems to access more data at a faster pace. The innovation at play here reduces the need for extensive hardware modifications while offering noticeable improvements in processing power and data retention thresholds. The strategic application of Cache MX in both existing and new architectures facilitates the enhanced utilization of available resources without the typical bottlenecks. Aiding in infrastructure improvements, the Cache MX solution provides versatile scalability that matches the pace of development in computing demands. Particularly in high-load environments, it ensures reliability and speed without the accompanying energy drain traditionally seen with cache expansions. By embedding within current server solutions, Cache MX delivers an indispensable advantage in sustainable energy expenditure and high throughput.
Spectral's MemoryIP series delivers a suite of silicon-proven static random access memories (SRAMs) that balance high density and low power consumption. The library supports various architectures, such as Single Port and Dual Port SRAMs, ROM, and Register Files, optimized for both performance and minimal energy use. Built on standard CMOS technology, these memory components feature architecture that includes separate power rails and various aspect ratio options, offering flexibility in integration. Utilizing SpectralTrak technology, these products provide dynamic monitoring of process, voltage, and temperature conditions, ensuring that the memory functions remain within operational limits. Designed for compatibility and adaptability, the MemoryIP can be provided in source form allowing users to customize and adapt the solutions further. Spectral MemoryIP is designed not just for compatibility but also for forward-thinking applications. These memory solutions are highly adaptive across different process nodes, supporting a broad range of configurations in terms of depth and data width and providing options for sleep modes to further enhance energy efficiency.
The P-Series MRAM solution from MEMTECH is crafted to deliver exceptional endurance and data persistence under demanding conditions. Suitable for aerospace, industrial applications, and specialized solid-state drives, this solution offers seamless integration through enhanced timing controls and DFI 5.0 support. The MRAM-DDR3 and DDR4 systems provide integrated support for dynamic operating conditions with customizable configurations, ensuring resilient performance alongside optimized power consumption.
The DDR PHY by OPENEDGES is engineered to offer robust and efficient integration within advanced memory systems. This PHY facilitates seamless data transfer and communication between the processor and memory modules, thereby enhancing the overall system bandwidth and efficiency. It supports various DDR standards, which makes it adaptable to a wide range of applications and ensures optimal performance across different system architectures. Designed for next-generation computing systems, the DDR PHY emphasizes reduced power consumption without sacrificing speed or reliability. By implementing sophisticated signal processing capabilities, the design ensures minimal electromagnetic interference and maximized data integrity. This makes it particularly valuable for high-performance computing environments where speed and stability are critical. Moreover, OPENEDGES has ensured that their DDR PHY is scalable and flexible, making it suitable for integration with multiple platforms and technologies. As a result, it's an excellent choice for engineers seeking a versatile memory interface solution that can be tailored to specific project requirements or broader market needs.
NeoBit offers a cutting-edge one-time programmable (OTP) memory solution that caters to a variety of semiconductor applications. It is particularly valuable in scenarios where data needs to be written once and retained for the life of the product, without the possibility of alteration or erasure. This technology is integral in applications such as device configuration settings, security keys, and identification codes. Designed to operate efficiently across various technology nodes, NeoBit provides a high level of reliability and endurance. Its architecture ensures data integrity and security, crucial for applications requiring stringent data protection. With minimal power consumption, NeoBit is ideal for use in portable devices and energy-sensitive applications. NeoBit's design leverages advanced processes to achieve a compact footprint, facilitating integration even in resource-constrained environments. It supports rapid programming and read operations, ensuring quick data access and processing. This makes it a versatile choice for a wide array of applications, from consumer electronics to industrial systems.
The Platform-Level Interrupt Controller (PLIC) is a versatile and fully parameterized controller designed to manage interrupt signals in RISC-V platforms. It is compliant with the RISC-V standards, offering full customization to match various system needs, making it a critical component in managing complex interrupt schemes across different CPU environments. The PLIC ensures efficient handling of interrupts, optimizing both performance and resource utilization. With its flexible architecture, the PLIC can be tailored to fit a wide range of applications, enhancing its utility in diverse embedded systems. It supports multiple levels of interrupts, prioritization, and custom configurations, ensuring it can integrate seamlessly with other system components. The inclusion of this controller in a system design gives developers the tools needed to effectively manage interrupt processing, thus maintaining high system throughput and responsiveness.
NeoFuse represents an advancement in anti-fuse OTP technology, offering robust data protection for semiconductor devices. Its unique design ensures that once programmed, the data in NeoFuse cannot be altered, making it ideal for applications requiring permanent data storage, such as security keys and hardware identifiers. The technology behind NeoFuse focuses on providing high reliability and data integrity. By utilizing innovative materials and processes, NeoFuse guarantees stable performance across extended periods, even under fluctuating environmental conditions. This ensures that the data remains secure and accessible throughout the device's lifecycle. NeoFuse seamlessly integrates into various technology nodes and is compatible with numerous fabrication processes. This flexibility allows it to serve a broad range of applications, from automotive systems that demand high-security measures to consumer electronics requiring efficient space utilization. With its focus on preventing unauthorized data manipulation, NeoFuse is a pivotal component for protecting sensitive information in today’s digital age.
I-fuse Replaser serves as an innovative variant in the I-fuse family, crafted to tackle specific challenges in OTP memory design. This technology is tailored to eliminate common issues associated with traditional OTP solutions, offering an advanced alternative that is both reliable and efficient. The Replaser variant integrates seamlessly into existing memory architectures without necessitating additional design or process modifications. It exemplifies Attopsemi's commitment to minimizing the need for extensive redesigns or significant alterations, thus accelerating time-to-market for new products. As with other I-fuse solutions, Replaser is backed by a wide patent portfolio, ensuring strong intellectual property protection and innovation. Its availability across multiple process nodes, including advanced semiconductor nodes, significantly broadens its applicability in markets where durability and reliability are crucial, such as automotive and industrial sectors.
OPENEDGES offers a DDR Memory Controller which serves as a critical component in managing and optimizing memory operations in contemporary computing systems. This controller interfaces directly with DDR memory, orchestrating read and write operations while ensuring peak data throughput and minimal latency. The architecture of this memory controller is designed to manage various memory channels and is highly configurable, allowing for adaptations specific to customer requirements. By leveraging intelligent algorithms, it efficiently schedules task operations, thereby improving overall performance and reducing power consumption. The controller's versatility makes it ideal for systems that demand high data rates and reliable memory management. In addition to performance benefits, the OPENEDGES DDR Memory Controller also incorporates features to ensure system integrity and data protection. Error correction and detection protocols are embedded to safeguard against data corruption, which is critical for maintaining system reliability in mission-critical applications. Its capability to adapt to various DDR protocols also ensures future-proofing the system against evolving memory standards.
The I-fuse S3 represents a leap forward in non-explosive OTP technology, offering enhanced features for superior performance in semiconductor memory. The architecture of the I-fuse S3 has been designed to surpass existing solutions through its innovative approach, maintaining compactness while offering scalability that caters to the diverse needs of modern semiconductor applications. With an emphasis on providing a competitive edge, the I-fuse S3 delivers higher testability and performance metrics, ensuring reliable operation without the need for redundancy. Its robustness is evident from its suitability across a broad spectrum of applications, maintaining top-tier reliability that meets stringent industry standards such as AEC-Q100 Grade 0. This technology can be seamlessly integrated into designs across multiple process nodes, from 0.7 μm to 22 nm, backed by a strong patent portfolio. Continuous innovation and development have ensured that I-fuse S3 remains a preferred choice for companies seeking high-reliability memory solutions.
Attopsemi's OTP IP represents a versatile and robust solution within the one-time programmable memory space. This IP is renowned for its adaptability across various semiconductor nodes, offering a balance of performance and reliability that caters to different application sectors, including automotive, industrial, and medical fields. The OTP IP stands out due to its design without stringent requirements for additional process steps, making it easy to integrate into standard logic designs. It offers significant advantages such as high reliability, reduced power consumption, and comprehensive testability, ensuring it meets the rigorous demands of modern electronics. Developed with a focus on quality and performance, Attopsemi's OTP IP is supported by a substantial number of granted patents, highlighting the company's leadership in innovation. Its silicon-proven track record underscores its dependability and effectiveness in practical applications, making it a preferred choice for customers worldwide.
SuperFlash® Technology is built on a proprietary split-gate Flash memory cell that provides a balance of high performance and low power consumption. Introduced in the early 90s, this technology has proven its reliability through its simplicity and endurance. The scalable architecture offers compatibility with standard silicon CMOS, making it an optimal choice for embedded memory applications. With a simplified design that delivers high endurance and excellent data retention, SuperFlash® Technology is particularly beneficial for environments requiring reliability under high temperatures and low failure rates. The technology has been adopted widely by leading foundries and serves various sectors like automotive and IoT applications.
PowerMiser represents a leading-edge Low Power SRAM IP designed for advanced devices that require extended battery life with minimal operational and standby power usage. PowerMiser is effectively utilised across several manufacturing processes including 28nm FDSOI, 28nm HDC+, and 22nm ULL BULK CMOS. It offers remarkable dynamic power savings of over 50% compared to its commercial counterparts and achieves substantial leakage power reductions depending on the operating environment. Even with its significant power-saving capabilities, PowerMiser incurs only a slight area penalty, catering to the dense requirements of modern systems. The PowerMiser compilers are highly versatile, supporting large capacities and offering various trade-offs between word numbers, lengths, and multiplexing factors. This flexibility is crucial in managing the intricate needs of contemporary SoCs, ensuring power efficiency without performance compromise. Moreover, PowerMiser's architecture eliminates the need for power-intensive level shifters, further optimising power consumption for applications demanding rigorous efficiency such as edge-AI deployments. Standing out with a retentive sleep mode feature, PowerMiser ensures rapid wake-up times and maximal leakage current savings. Its innovative design techniques paired with SureCore’s extensive expertise in power management lead to a unique product that significantly reduces the energy footprint of embedded systems, allowing manufacturers to meet the ever-tightening energy standards of today's market.
Ternary Content-Addressable Memory (TCAM) is a cutting-edge solution developed by DXCorr, tailored for applications requiring fast search capabilities, such as networking equipment and high-speed data processing systems. By enabling simultaneous comparison of data, TCAM drastically enhances lookup speeds, making it indispensable for routing tables, packet classification, and access control lists. DXCorr's TCAM leverages low-power consumption designs, allowing it to operate efficiently even in power-sensitive environments. The ingenious architecture of their TCAM integrates both binary and ternary search capabilities, which facilitates sophisticated data retrieval processes without compromising on speed or accuracy. This makes it highly valuable in scenarios where vast amounts of data need to be rapidly accessed and processed. The company's dedication to mastering TCAM technology is evident in their ability to address issues related to concurrent operations, ensuring their solutions remain reliable under intensive workloads. Through meticulous design and integration at various process nodes, DXCorr continues to supply networking and communications sectors with robust TCAM solutions that meet the evolving demands of fast-paced data-dependent industries.
The Magnetoresistive Random-Access Memory (MRAM) offered by DXCorr embodies the forefront of memory technology, providing a non-volatile solution that combines the speed of SRAM and the non-volatility of traditional flash memory. Designed to meet the needs of modern computational requirements, MRAM ensures high speed, endurance, and energy efficiency, making it a preferred choice in fields that demand fast data retrieval and low power usage. DXCorr's MRAM capitalizes on the Spin-Transfer Torque (STT) and Spin-Orbit Torque (SOT) variations, providing adaptability for multiple applications across industries. These technologies are crucial in IoT devices and automotive systems where rapid access and reliability are essential. The firm's evolution of MRAM is rooted in executing substantial power improvements while maintaining large storage densities, allowing seamless integration into larger systems that seek both performance and durability. The development of MRAM by DXCorr is reflective of their commitment to pioneering in-memory solutions that cater to diverse requirements. By leveraging advanced manufacturing process nodes, such as FinFET and SOI technologies, DXCorr enhances the operational efficiency of their MRAM solutions. This focus not only supports current technological demands but also anticipates future advancements, aiding clients in maintaining competitive advantages in their respective markets.
The pPOR01 is a robust power-on reset circuit designed for reliable initialization of digital systems. Engineered to handle various power-up scenarios, this circuit ensures that digital devices start in a known state despite possible fluctuations during power application. The pPOR01 is characterized by its low power consumption and compact design, which facilitates easy integration into diverse digital platforms. It provides an essential reset mechanism critical for stable system performance across an array of technology nodes.
SiC Schottky Diodes are key components in power conversion applications, offering superior performance compared to traditional silicon diodes. These diodes facilitate rapid switching, reduced power losses, and enhanced thermal characteristics, making them highly suitable for high-frequency applications. Their employment spans across converters, renewable energy systems, and electric vehicles, where efficiency and durability are paramount. Unlike silicon diodes, SiC Schottky Diodes feature a wide bandgap material, allowing operation at higher voltages and temperatures. This capability facilitates substantial improvements in efficiency, especially in applications where minimizing energy waste is crucial. They enable designs to become more compact and lighter, leading to innovations in system architecture and energy distribution networks. The adoption of SiC Schottky Diodes is driven by the growing demand for sustainable and efficient energy solutions. Their low forward voltage drop and fast recovery characteristics reduce energy dissipations, contributing directly to energy savings and extended component lifespan. As industries continue to push for more compact and efficient solutions, these diodes offer a viable means to achieve the high-performance requirements of modern electronic applications.
Weebit Nano has developed an Embedded ReRAM designed to revolutionize memory technology within electronic devices. This non-volatile memory solution enables smaller and more efficient integration into a wide range of semiconductor applications, enhancing both the functionality and capabilities of modern SoCs. By focusing on embedded use cases, Weebit's ReRAM provides high endurance and reliability even in extreme environmental conditions, making it particularly suitable for automotive, IoT, and industrial applications.\n\nDesigned for seamless integration into existing manufacturing processes, Weebit's Embedded ReRAM facilitates the creation of systems that can leverage faster memory access speeds and reduced power consumption. This is critical in meeting the rigorous demands of today's tech-savvy consumer markets, stakeholders in industries like edge computing, and those developing battery-operated devices that require long operational lifetimes.\n\nThe memory technology is optimized to work within varying process nodes, offering compatibility from older nodes such as 180nm down to 22nm and potentially smaller geometries in the future. This flexibility ensures that Weebit’s ReRAM can adapt to the evolving needs of semiconductor design, providing a versatile platform for innovation and product differentiation. It is a key component for companies wanting to expand their market offerings with smarter, more efficient memory capabilities.
This high-performance memory controller and PHY interface supports QDR IV memory technology, featuring an 800MHz memory interface and a 200MHz user interface. Designed for next-generation high-performance applications, it is suitable for high-speed computing and data-intensive tasks, facilitating rapid data retrieval and transfer. Its specialized design allows for efficient memory management, extending capabilities in sectors demanding maximal throughput and precision.
The DB9000-AXI Multi-Channel DMA Controller from Digital Blocks represents a robust solution in Direct Memory Access technology for systems requiring efficient data handling and transfer. Optimized for high throughput, the controller excels in managing memory and peripheral interactions with independent channels, each equipped with DMA Read and Write Controllers to facilitate seamless data transactions. Designed with scalability in mind, this controller can be configured to support a wide range of applications from minimal to extensive data transfer needs. The DMA Controller is integrated with features like scatter-gather linked-list controls and intersection awareness for burst modes in the AXI protocol, making it conducive for large data handling scenarios. Additionally, the controller's architecture supports sideband flow control signals for managing unique peripherals, ensuring data integrity and system stability. Alongside providing comprehensive IP features, it is outfitted with AXI4-Stream interfaces for diverse applications, underscoring its versatility in meeting the dynamic requirements of modern embedded systems.
Weebit Nano's Discrete ReRAM Chip development is targeted at creating stand-alone non-volatile memory components that enhance device capabilities with faster data processing speeds and improved power efficiency. This innovative memory chip offers a compact solution that caters to a variety of market segments, including internet of things (IoT), high-performance computing, and next-generation consumer electronics that require efficient memory storage without compromising on speed and reliability.\n\nWith the discrete variable of ReRAM, Weebit aims to deliver a robust product that supports advanced implementations, allowing manufacturers to embed this technology into their devices to push the boundaries of technology and performance. Discrete ReRAM Chips are engineered to provide quick read and write times, supporting a multitude of applications that demand both high data integrity and responsiveness across different environments.\n\nDesigned to handle complex computing tasks, these chips ensure that memory bottlenecks are a thing of the past, providing a future-proof memory solution that scales alongside technological advancements. Weebit's discrete chips address key challenges such as data retention and endurance, making them suitable for products that are required to perform reliably under continuous usage.
Quazar Quad Partition Rate Memories are engineered to replace four to eight QDR devices, expanding the memory capacity of FPGAs with high-speed, high-capacity SRAM. This innovation reduces board complexity and costs by utilizing a smaller number of serial SERDES connections. The Quazar memory is available in configurations of either 576Mb or 1Gb, offering performance improvements over traditional QDR solutions. With a bandwidth capability of up to 640 Gbps, this memory supports dual-port configurations, making it ideal for applications that require rapid data handling and processing. The product is designed for seamless integration into systems that benefit from reduced signal routing complexities and expanded FPGA capacity. Quazar's architecture allows for customizable memory usage, providing either deep or wide memory access modes, which developers can choose based on specific application needs. The deep mode supports up to four independent SRAM partitions, while the wide mode offers up to eight, each capable of high random-access performance. By adopting Quazar memories, developers can minimize design time and enhance system efficiency. They deliver a substantial cost advantage, typically being less expensive than comparable QDR setups, and are engineered to meet the rigorous demands of high-throughput applications, offering low latency and enhanced bandwidth. Quazar memories are particularly suited for applications such as memory expansion in high-performance Fs, replacing traditional QDR or RLDRAM, and can free up HBM resources. This translates into operational efficiency and flexibility in high-speed networking and real-time data operations, facilitating advancements in industries relying on superior data throughput and processing power.
MiniMiser is a highly efficient multi-port register file architecture designed for both low power and high-performance requirements. Its innovative design significantly reduces power consumption, offering more than a 50% decrease compared to traditional register file solutions. MiniMiser allows designers to finely tune their power usage profile in accordance with their application's specific operational needs. This IP is uniquely implemented without reliance on the foundry bit cells, opting instead for a single rail design. This architecture enables seamless integration with system logic, bypassing conventional challenges such as level shifting and static timing analysis. MiniMiser is particularly critical in applications involving AI capabilities in wearable devices, which are increasingly demanding in their processing power yet restricted in energy budgets. MiniMiser sets itself apart by providing developers with innovative avenues for optimizing power envelopes, essential for extending battery life and performance efficiency in competitive markets. By enhancing SO-C performance through varied voltage modes, MiniMiser is an ideal choice for developers looking to merge energy savings with cutting-edge functional demands.
KNiulink's DDR solution embodies a high-performance and low-power approach to supporting DDR3, DDR4, DDR5, and various LPDDR configurations. The solutions are curated with cutting-edge technology to enhance customer systems' efficiency and reliability. They provide scalable memory solutions suitable for high-speed data storage and access.
IPrium's BCH Encoder and Decoder offer a comprehensive solution for error correction in digital communications. Utilizing Bose–Chaudhuri–Hocquenghem (BCH) codes, which are well-regarded for their error detection and correction capabilities, this IP is essential for enhancing data integrity across various communication channels. The encoder and decoder are adept at managing random error patterns, making them particularly useful in environments where data reliability is critical. Typical applications include digital television, satellite communications, and storage devices that require robust error management techniques. The BCH Encoder and Decoder IP core is designed to be versatile and easily integrated into existing systems, providing a reliable way to mitigate errors during data transmission and storage. With a focus on flexibility and performance, IPrium's offering supports a range of block lengths and error-correction capacities, making it a valuable asset for safeguarding data accuracy.
Atria Logic's Hybrid Memory Cube Verification IP is crafted for systematic verification of FPGA and SoC designs, providing a user-friendly and configurable environment. This verification IP supports SystemVerilog, offering reusable components that streamline the development process for complex memory solutions. It ensures compliance with Hybrid Memory Cube standards, allowing designers to achieve high levels of reliability and performance in their memory systems.
SLL's Modular PHY Type 01 Suite is a PVT aware, foundry and process agnostic, PHY for use with most single-ended LVCMOS protocols up to 400 MHz DDR. The PHY has a highly modular architecture that supports x1, x4, x8, and x16 data paths. Its has process-voltage-temperature (PVT) controls that are suitable for use in hard realtime systems (zero timing interference on PVT adjustments). The PHY includes a full standard cell library abstraction. The PHY also offers >1000 configurable options at compile time, enabling coarse grain capabilities such as pin-level deskew to be enabled/disabled, along with precise fine-grain control of mapping of RTL to gates through various data paths. It supports a range of protocols such as SPI, QSPI, xSPI, eMMC, .. and allows run-time configuration via an APB3 control port. It is designed to support easy place-and-route in a broad range of customer designs.
The DDR-I/II/III memory controller offers a fully customizable solution that aligns with JEDEC standards. It supports both pipelined and non-pipelined interfaces to accommodate various SDRAM devices, making it ideal for FPGA and SoC applications. This controller enhances bandwidth utilization and memory access speeds, thereby optimizing overall system performance for applications requiring robust memory communication channels.
SecureOTP18 is a unique low-power, high-voltage one-time-programmable memory solution designed for secure data applications. Its high-voltage operation ensures robust data retention, catering to security-centric applications requiring non-volatile data storage. The architecture is tailored for efficiency in power-sensitive environments, making it suitable for integration into a wide array of devices needing permanent data storage.
PowerMiser Plus is an advancement in low-power SRAM technology, building upon SureCore's renowned PowerMiser architecture. Designed for applications needing ultra-low voltage operations, it significantly enhances low-power product development through its dual rail capability. This feature permits interfacing down to 0.45V, facilitating synchronized operation of logic and memory at reduced voltages, which is vital for performance scaling while conserving power. With PowerMiser Plus, users can achieve revolutionary energy savings especially pertinent in edge-AI applications where SRAM is heavily used for pattern matching and similar processes. By focusing on minimizing the differential between core array and periphery supplies, this IP circumvents the necessity for power-hungry level shifting devices, rendering it an optimal choice for power-restricted applications. SureCore’s PowerMiser Plus positions itself as the go-to solution for enterprises aiming to extend battery life and reduce the power footprint in their SoCs. The architecture sets a new industry benchmark for low voltage operation, effectively meeting the strict power budgets necessitated by modern technology sectors like wearables and IoT.
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