All IPs > Memory Controller & PHY > SRAM Controller
In the expansive world of semiconductor technology, SRAM Controller semiconductor IPs play a crucial role in managing static random access memory (SRAM). SRAM Controllers are critical components in a wide array of electronic systems due to their speed and efficiency in data access and storage operations. Whether in consumer electronics, telecommunications, or industrial applications, these controllers ensure that memory operations are optimized for maximum performance. At Silicon Hub, we offer an expansive selection of SRAM Controller IPs tailored to handle diverse computational needs.
SRAM Controllers are pivotal in connecting processors and SRAM memory blocks. They facilitate seamless communication between these components, ensuring that data is transferred quickly and efficiently. This capability is particularly crucial in applications that require real-time data processing and high-speed performance, such as gaming consoles, networking equipment, and advanced automotive systems. By integrating SRAM Controller IPs, designers can achieve reduced latency and enhanced system throughput, which are essential for maintaining competitiveness in today’s tech-driven market.
Apart from the impressive performance features, these semiconductor IP solutions are also designed with flexibility and scalability in mind. Users can select IPs that offer customizable features to cater to specific application requirements, such as varying memory sizes and bandwidths. This adaptability makes SRAM Controller IPs suitable for cutting-edge applications, including artificial intelligence (AI) devices, IoT technologies, and mobile computing. Furthermore, these controllers often come equipped with error correction capabilities, adding another layer of reliability to critical systems.
At Silicon Hub, our SRAM Controller semiconductor IP portfolio is carefully curated to meet the highest industry standards. Whether you are designing compact systems for power-sensitive environments or high-end servers requiring massive bandwidth, our selection offers robust and versatile solutions. Explore our SRAM Controller IPs to find the perfect match for your project requirements and ensure your next innovation harnesses the full potential of efficient and effective memory management.
The Aeonic Power product family introduces revolutionary on-die voltage regulation tailored for SoC power delivery challenges. This series is engineered for energy and BOM optimization, featuring configurable architecture and PDN-oriented telemetry. By supporting integrated voltage regulation, Aeonic Power aids in minimizing energy consumption while delivering comprehensive insights into SoC power behaviors, facilitating effective energy and power management.
The YouONFI product from Brite Semiconductor is tailored for NAND Flash applications, offering a high-speed PHY solution that is compliant with ONFI 1 through 5 standards. This versatility supports both synchronous and toggle DDR NAND modes, with data rates reaching up to 2400Mbps. Flexibility is a key component of YouONFI, catering to varying power supplies at 1.2V, 1.8V, and 3.3V, thus expanding its application scope across different technology nodes and system requirements. The IP is optimized for seamless integration into high-performance memory subsystems, ensuring efficient data management and storage. Commanded by a fully digital DLL and accompanying APB interfaces for storage management, YouONFI facilitates exceptional data throughput and reliability in embedded systems. This makes it particularly compelling for use in consumer electronics, industrial storage solutions, and any application relying on rapid access to flash storage components.
The Platform-Level Interrupt Controller (PLIC) from Roa Logic is a highly adaptable interrupt management system, crafted in accordance with the RISC-V Privileged v1.10 specification. This core seamlessly integrates with AHB-Lite, supporting a wide range of interrupt sources and targets. It provides a robust foundation for managing complex interrupt architectures, essential in modern embedded systems. The PLIC core is meticulously designed for configurability, offering custom parameters for address and data widths, as well as the capacity to set unique priority levels per interrupt source. It includes features like programmable priority thresholds and an interrupt pending queue, allowing for tailored performance to meet the specific needs of an application. This controller ensures efficient handling of interrupt masking using a priority threshold system, further enabling sophisticated event management in multi-tasking environments. With comprehensive documentation and source code available through Roa Logic's GitHub, the PLIC is an accessible solution for developers looking to integrate reliable interrupt control in their RISC-V based systems.
The AXI4 DMA Controller by Digital Blocks is engineered to facilitate efficient data transfers within hardware configurations, offering multi-channel support ranging from 1 to 16 channels. This makes it adaptable for varying data throughput needs, whether for small data packets or extensive data transfers. It features independent read and write controllers for each channel, supporting both scatter and gather linked-list transactions, ensuring maximum efficiency. Designed with the AMBA AXI protocol in mind, this DMA controller ensures seamless integration with other system components, making it ideal for high-performance computing tasks that require substantial data movement. The ability of users to program burst lengths and manage 4K boundary crossings enhances its adaptability for different application scenarios, from network systems to complex AV processing. The controller also allows for a high degree of customization to accommodate specific needs. Options to tailor features can help systems minimize silicon area while managing licensing costs effectively. Software compilation is further streamlined by the extensive suite of provided specification documents and test benches, guaranteeing reliable performance across diverse operational environments.
Secure OTP offers a groundbreaking approach to data protection in semiconductor chips, employing an anti-fuse OTP memory to safeguard sensitive information. By combining hardware macros with digital RTL, it meticulously protects data at rest, in transit, or in use, making it a cornerstone of modern chip design. Its architecture supports various integrations across IC applications, providing robust and adaptable security solutions tailored for diverse markets.<br><br>This technology elevates the standard OTP solutions by incorporating advanced hardware encryption mechanisms and tamperproof designs. Secure OTP's seamless integration into multiple systems underscores its versatility, catering to demands across sectors such as automotive, industrial, and consumer electronics. Users benefit from secure key management and enhanced data integrity, mitigating the potential risks of traditional storage vulnerabilities.<br><br>The design philosophy behind Secure OTP centers on preventing data leakage, particularly for IoT devices that are prone to attacks. As devices face the growing menace of cyber threats, Secure OTP scales to meet these challenges head-on, providing fortified data storage solutions that are resistant to physical attacks and environmental variations. With the rising importance of secure encrypted storage, Secure OTP's role is vital in maintaining the integrity and confidentiality of critical chip information.
The LEE Flash G1 is a highly cost-effective Flash memory solution, leveraging SONOS technology. Designed to support harsh automotive environments, this memory IP is scalable down to 40nm technology. It is ideal for applications necessitating medium memory capacity, providing long retention life and low power operation. This Flash memory solution requires only two to three additional masks, showcasing its compatibility with standard CMOS processes without altering the characteristics of logic transistors. Its short testing and bake time further reduce chip costs, facilitating low-cost implementation for various applications. LEE Flash G1’s efficiency extends to its program and erase operations, utilizing Fowler Nordheim tunneling to minimize power consumption dramatically. This technology ensures smooth integration into existing design frameworks, offering extended data retention and high-temperature resilience.
The YouDDR solution offered by Brite Semiconductor is a comprehensive sub-system that includes a DDR controller, PHY, and I/O. This solution is meticulously crafted to support various DDR technologies like LPDDR2, DDR3, LPDDR3, DDR4, and LPDDR4/4x, with data transfer rates ranging from 667Mbps to 4266Mbps. YouDDR is equipped with advanced dynamic self-calibration logic (DSCL) and dynamic adaptive bit calibration (DABC) technologies. These advancements allow for automatic adjustment to variations such as process, voltage, and temperature (PVT) changes, ensuring robust performance across different conditions. The system also supports training sequences for both read and write operations, ensuring optimized signal integrity and data accuracy. Brite's YouDDR technology guarantees high speed and low power consumption, making it ideal for applications requiring fast memory access and energy efficiency. Its design is highly flexible, supporting multiple configuration options to meet diverse application needs, including different interface types like AXI and AHB. These features make it particularly well-suited for use in high-performance computing systems, consumer electronics, and network systems where quick data retrieval is paramount. The YouDDR IP provides significant advantages over competing products due to its small area and power-efficient design. It also incorporates a comprehensive set of verification tools and support for seamless integration into larger system designs. This makes it a valuable asset for designers seeking a reliable and efficient memory subsystem with proven performance in varied industry applications.
Analog Bits offers a diverse portfolio of sensors designed for precision power supply monitoring and process, voltage, and temperature (PVT) management. Their sensors are crucial in detecting voltage spikes, providing comprehensive monitoring for chip and system-level power delivery. Fully integrated and low-power, these sensors support efficient load balancing and ensure stability and security across various applications.
CodaCache is the last-level cache solution from Arteris, designed to solve significant system-on-chip design challenges, including performance bottlenecks, data access latency, and power efficiency constraints. By leveraging high-performance caching techniques, CodaCache effectively optimizes data flow and power consumption across complex SoC architectures, ensuring accelerated memory access times and improved overall system efficiency. This cache solution is highly configurable, enabling developers to fine-tune features such as cache associativity and partitioning, which is critical for maximizing performance in specific application scenarios. Moreover, CodaCache benefits from seamless integration with the Arteris NoC environment, facilitating streamlined data traffic management across integrated systems. The product supports real-time processing needs by enabling a scalable cache that addresses challenges in timing closure and system integration. Performance monitoring and hardware-supported coherency management features empower engineers with tools for enhanced control and monitoring, ensuring the cache operates at peak efficiency. CodaCache’s functional safety and resilience options further its use in critical applications where high reliability is mandatory.
SRAM, or Static Random-Access Memory, is a critical component in semiconductor design, known for its high-speed data access and reliability. DXCorr’s SRAM solutions are built to maximize performance in a multitude of applications, offering significant advantages in power efficiency and operational speed. These memory arrays are adept at providing the rapid access necessary for high-performance computing environments, paving the way for enhanced data processing and storage capabilities. The flexibility and customizable nature of DXCorr’s SRAM offer clients the ability to tailor capabilities to specific application needs. This makes it an ideal choice for applications requiring low latency and high throughput, such as cache memory in processors and performance-critical applications in telecommunications. Its distinct architecture allows for robust integration into various systems, providing the foundational memory support essential for advanced computing solutions. Designed with leading-edge technology, DXCorr’s SRAM products not only optimize current computing requirements but also anticipate the needs of future technologies. The focus on efficiency ensures reduced power consumption, critical for battery-dependent applications and eco-friendly computing initiatives. SRAM's modular design also facilitates easy scalability, making it a preferred choice for developers aiming to expand functionality and performance consistently.
Everspin's Toggle MRAM stands as a leading non-volatile memory solution, emphasizing simplicity and reliability. It utilizes a one transistor, one magnetic tunnel junction cell design, ensuring high durability and data integrity over 20 years. The patented Toggle MRAM cell employs a magnetic tunnel junction (MTJ) composed of a fixed magnetic layer, a dielectric tunnel barrier, and a free magnetic layer. This architecture allows data to be stored in a manner that combines the endurance of SRAM with the long-term reliability of Flash.\n\nToggle MRAM is fundamentally different from traditional volatile memory technologies. During read processes, the device activates the pass transistor, comparing the cell's resistance to a reference device to retrieve data, while write operations are conducted through magnetic field interactions, ensuring precision without disturbing adjacent cells. This unique setup offers 'instant-on' capabilities, providing reliable operation across a wide temperature range.\n\nThis technology is not only valued for its high performance but also for its versatility. With applications spanning from industrial control systems to consumer electronics, Toggle MRAM ensures data preservation in power-loss scenarios, offering a robust solution for increasing electronic system demands.
The LEE Flash G2 builds upon its predecessor, offering a Flash solution that harmoniously combines with logic circuits while minimizing costs and power consumption. It's based on a simple SONOS memory cell structure, allowing seamless integration with standard logic, thus converting volatile SRAM circuits into non-volatile versions. This innovation removes the need for isolation areas and additional high voltage requirements during read operations, enhancing layout flexibility and power efficiency. Capable of supporting large memory capacities up to a few Megabytes, LEE Flash G2 stands out for its compatibility with existing CMOS processes and its ability to maintain performance without altering design characteristics. The G2 utilizes a very low power Fowler-Nordheim tunneling mechanism, ensuring minimal current consumption during programming and erasing, which leads to significantly reduced testing time and expenses. Its architecture is particularly advantageous in automotive applications requiring high-temperature operations and long data retention periods.
NuRAM Low Power Memory represents a breakthrough in memory technology, utilizing the reliable MRAM architecture to deliver fast access times while significantly reducing leakage power. This IP is a compelling choice for system designs looking to upgrade from traditional SRAM or nvRAM, as well as embedded Flash. Its innovative design allows for substantial size reduction, enabling more efficient memory footprints, which translates into reduced power needs and potentially minimal DDR memory access. Furthermore, the memory can be completely powered down without losing stored data, offering impressive power and latency optimizations that are critical for modern digital systems.
SmartMem Subsystem IP enhances ease of use and scalability by optimizing power, performance, and endurance across a variety of memory types, including NuRAM and other MRAM technologies, as well as RRAM, PCRAM, and embedded Flash. This versatile memory subsystem is fully synthesizable and configurable, making it an excellent choice for SOC designs that require customizable compute-in-memory solutions. SmartMem supports high performance in demanding environments, providing essential features for adaptive memory management that greatly improve the deployed memory's operational efficiency and effectiveness. Its value lies in its ability to improve the utility of existing memory technologies while offering a robust framework for new developments.
Designed for speed and efficiency, the SD UHS-II from Silicon Library meets the demands of high-performance applications requiring rapid data exchange and secure storage systems. This IP supports the Ultra High Speed-II standards, optimizing transfer speeds and expanding memory access horizons for device manufacturers and designers. Featuring a sophisticated interface, this IP is compatible with a variety of storage products, boosting flexibility and enhancing product development timelines. These features make it apt for integration into both embedded systems and standalone devices where high-capacity and secure data management are crucial. Engineered with reliability in mind, SD UHS-II facilitates smoother operation across different platforms. This versatility extends its application to consumer electronics, industrial systems, and professional environments that require robust data handling standards, thus contributing to accelerated market readiness and improved product lifecycle management.
I-fuse is designed for seamless integration into standard semiconductor processes, distinguished by its non-explosive mechanism. This one-time programmable memory (OTP) stands out for not requiring special processes or charge pumps, offering ease of use and high reliability. Encapsulated within it is a patented technology that spans processes from 0.7 µm to 22 nm, ensuring flexibility across various manufacturing environments. This innovative solution emphasizes robustness, qualifying to AEC-Q100 standards and making it ideal for automotive, industrial, and medical applications. Its compact design doesn't compromise on performance, providing low programming voltage and low power consumption. I-fuse's adaptability across multiple temperature ranges makes it suitable for both high and low-temperature environments. Incorporating I-fuse into products enhances their competitive edge, thanks to the extensive reliability and testability aspects intrinsically built into the design. It allows seamless product evolution, promoting innovation without sacrificing dependability.
The LEE Fuse ZA is a specialized Anti-Fuse memory solution, optimized for one-time programming needs such as memory redundancy and trimming applications. Its design philosophy embraces ease of implementation and cost effectiveness, requiring no additional masks or process steps beyond standard CMOS workflows. With capabilities extending from advanced nodes of sub-10nm to more classic 180nm processes, this memory is versatile across various technology scales. The LEE Fuse ZA stands out due to its high-temperature and long data retention attributes, aligned with the demands of automotive-grade applications. Its efficient design supports widespread application opportunities, enabling manufacturers to integrate this technology into existing systems without significant architectural overhaul. LEE Fuse ZA addresses critical memory needs while maintaining cost efficiency and reliability in challenging environments.
NVMe Streamer is a specialized solution intended for boosting storage performance by leveraging Non-Volatile Memory Express protocols integrated within FPGA platforms. It connects Solid-State Drives (SSDs) effectively, capitalizing on PCIe's high-speed data capabilities to outperform legacy protocols. The NVMe Streamer efficiently offloads NVMe tasks into programmable logic, thus maximizing data transfer speeds across various FPGA implementations. Built to satisfy the growing need for high-speed storage solutions, NVMe Streamer is designed as a fully integrated host subsystem. It is pre-validated and operates with various Xilinx and AMD Versal FPGAs, utilizing Xilinx Multi-Gigabit Transceivers to ensure robust PCIe connectivity. This enhancement allows streamlined data communication directly between SSDs and FPGA blocks without CPU intervention, providing what is referred to as "full acceleration". It supports seamless SSD connectivity with support for various PCIe generations, ensuring scalability and flexibility across different use-case scenarios. This IP core is crucial for applications requiring rapid data ingestion and storage. High-frequency, data-centric applications such as automotive data logging, aerospace data acquisition, and high-speed analog and digital data recording benefit greatly from NVMe Streamer. Its ability to provide lossless data streaming from and to SSDs highlights its strategic importance in automotive networks and integrated storage solutions.
Everspin's Parallel Interface MRAM offers a robust solution for environments demanding high-speed data access with non-volatility. This MRAM is SRAM-compatible, ensuring seamless integration with existing systems. With access timings as swift as 35ns, it stands out for its rapid response time and ability to endure numerous read/write cycles without degradation.\n\nThis MRAM design ensures data retention for over two decades, even in the absence of power. Through its low-voltage inhibit circuitry, data integrity is guarded by preventing unintended write actions during voltage fluctuations. Its compatibility with an 8-bit/16-bit interface further enhances its adaptability across diverse technological ecosystems.\n\nThe Parallel Interface MRAM is engineered for high reliability in mission-critical applications. Its structure effectively counteracts power loss scenarios, maintaining data integrity and availability. Such features make it ideal for sectors requiring fail-safe operation, including automotive, aerospace, and medical devices.
TwinBit Gen-1 represents an advanced non-volatile memory solution that is embedded within logic-based semiconductor designs, adapting seamlessly to CMOS logic processes without necessitating additional masks or process steps. This IP supports a range of process nodes from 180nm to 55nm, demonstrating high endurance through over 10,000 program and erase cycles. The memory solution excels in flexibility and efficiency, providing a sizeable range of memory density from 64 bits to 512K bits. Particularly beneficial for applications like analog trimming, security key storage, and system switches for ASIC and ASSP, it helps reduce manufacturing costs while maintaining compatibility with modern semiconductors. TwinBit Gen-1's remarkable features also include low-voltage, low-power operations, complemented by an automotive grade under AEC-Q100 conditions. Additionally, this technology's built-in test circuits streamline stress-free test environments, ensuring its integration doesn't hamper production. Compared to other technologies such as eFuses, TwinBit Gen-1 saves silicon area and simplifies test procedures without sacrificing operational capacity. Its design is particularly poised for embedded applications needing secure reprogrammable memory.
The LEE Flash ZT is crafted for trimming and parameter storage, especially focusing on automotive and analog IC applications. It boasts a Zero Additional Mask technology, requiring no new process steps, thus ensuring ease of implementation and significantly reduced cost. Operating efficiently in harsh environments, the ZT memory supports a wide temperature range and long retention life. It utilizes FN tunneling to achieve exceptionally low power consumption, which greatly shortens testing time and therefore contributes to cost savings. Flexible and robust, the LEE Flash ZT is compatible with standard CMOS processes, allowing existing design and IP reuse. This makes it an optimal solution for applications seeking minimal disruption in existing manufacturing workflows while requiring durable memory solutions for critical settings.
PermSRAM is a versatile non-volatile memory solution integrated into foundry standard CMOS platforms accommodating process nodes from 180nm to 22nm and beyond. This memory technology offers various functionalities, such as one-time programmable ROM and pseudo multi-time PROM, which feature a multi-page configuration spread across memory sizes from 64 bits to 512K bits. A notable aspect of PermSRAM is its non-rewritable hardware safety lock that ensures the secure storage of critical security codes. In addition to its security features, PermSRAM delivers high reliability and a stable yield, making it suitable for automotive applications that require data retention at temperatures exceeding 150 degrees Celsius. This memory type is designed for seamless integration with existing system infrastructures as it doesn't need additional read operation circuitry like charge pumps. Its built-in self-test circuit is pivotal for supporting stress-free testing environments, ensuring ease of implementation in various applications like DRM and HDMI decoding, security code storage, and program storage. The benefits of PermSRAM extend to a smaller silicon footprint, achieved through a tamper-resistant design mechanism that uses an invisible charge trap memory system. This compactness is complemented by a fully testable architecture using conventional equipment. PermSRAM beams with capabilities that cater significantly to secure and reliable memory demands, whether for market differentiation or meeting stringent automotive standards.
EverOn offers a silicon-proven Single Port Ultra Low Voltage (ULV) SRAM solution, providing up to 80% dynamic power savings and up to 75% static power reductions when operated within its voltage range of 0.6V to 1.21V. This high-performing SRAM meets the needs of cutting-edge applications, with cycle times as low as 20MHz at its minimum voltage, scaling up to over 300MHz. Its innovation lies in achieving remarkable power reductions while maintaining flexibility for applications in wearables and IoT, ensuring that devices remain functional across a wide range of power conditions.
ReRAM, or Resistive RAM, is a revolutionary memory technology developed by CrossBar. It utilizes a unique structure, comprising a simple three-layer design that leverages a top electrode, a switching medium, and a bottom electrode. This assembly allows for the formation of a filament within the switching material when a voltage is applied, resulting in efficient and stable resistance switching. One of the remarkable features of ReRAM is its capability to scale beyond traditional limits, making it highly adaptable in terms of its integration with logic processes across various foundries and down to technology nodes smaller than 10nm. This technology powers a new era of memory storage, offering terabytes of data capacity directly on a single chip through its ability to stack in 3D formations. ReRAM's compatibility with CMOS processes facilitates its deployment in both standalone memory devices and System-on-Chip (SoC) designs. Moreover, it boasts an impressive endurance, with over a million write cycles and a decade-long retention period at elevated temperatures of 85°C, making it an excellent choice for high-performance and high-density applications, including artificial intelligence and secure computing. By offering multifaceted ReRAM IP cores, CrossBar caters to a variety of applications ranging from automotive and industrial to mobile and consumer electronics. Its advantages over conventional Flash memory are evident in reduced latency, faster write speeds, and lower energy consumption, which collectively contribute to enhanced lifetime and performance of storage solutions in modern digital environments.
Sentire Radar by IMST is an advanced radar solution designed to provide precise environmental mapping and object identification in various conditions. Utilizing sophisticated processing algorithms, the radar can distinguish between different objects and adjust dynamically for conditions such as rain, fog, or darkness. This makes it suitable for use in automotive and security applications, where precision and reliability are crucial.
The Serial Peripheral Interface (SPI) MRAM by Everspin is crafted to meet the needs of applications requiring rapid data transactions with minimal pin usage. This memory solution excels in speed, offering reading and writing operations faster than many parallel MRAMs due to the efficiency of its four data lines in Quad SPI mode.\n\nThis device is encased in a compact 16-pin SOIC package and engineered for low power consumption while maintaining swift data access at 52MB per second. Such capabilities make it suitable for systems requiring efficient space management alongside robust performance, such as industrial computing and embedded system applications.\n\nSPI MRAM is designed for simplicity in integration, supporting both rapid prototyping and long-term deployments in data-intensive environments. Systems such as next-generation RAID controllers and embedded logs benefit from its fast access speeds and non-volatile characteristics, ensuring data retention even during unforeseen power outages.
TwinBit Gen-2 enhances the prior version by supporting more advanced process nodes, spanning from 40nm to 22nm and adapted for further processes. It retains the simplicity of integration found in Gen-1, with no requirement for additional process steps, masks, or auxiliary charges despite its sophistication and efficiency enhancements. This memory technology leverages a newly developed Pch Schottky Non-Volatile Memory Cell that optimizes power consumption for ultra-low-power operations. The tech allows controlled hot carrier injection by cell bias during the program/erase cycle, ensuring the retention and reliability of data throughout its lifecycle. TwinBit Gen-2 thus guarantees a heightened level of operational efficiency for modern electronic devices. Suitable for various memory applications demanding high security and low energy consumption, TwinBit Gen-2 is a valuable asset in fields like IoT and other high-volume consumer electronics requiring reprogrammable memory infrastructure. By achieving this balance, TwinBit Gen-2 establishes itself as a leading non-volatile memory solution in the evolving semiconductor market.
Tower Semiconductor's Non-Volatile Memory (NVM) solutions provide enhanced functionalities within high levels of integration for system-on-chip (SoC) designs. These solutions focus on delivering low power consumption and high endurance, essential for modern electronic systems that require reliable and efficient memory storage.\n\nThe NVM technologies encompass various memory modules catering to fast programming speeds and secure data retention, advantageous for numerous applications within automotive and consumer electronics. Adaptability and high-quality integration are enabled by Tower's robust design support and their partnerships with leading IP vendors.\n\nTailored to support a wide array of design configurations, these NVM solutions provide tremendous flexibility for product development, improving time-to-market for innovative solutions. The strong emphasis on performance, retention capabilities, and efficiency makes them a preferred choice for advanced memory applications across different industries.
Magnetoresistive Random-Access Memory (MRAM) is a cutting-edge memory technology widely acclaimed for its stability and endurance. DXCorr has engineered MRAM solutions that deliver non-volatility and fast write and read speeds, positioning it as a reliable memory choice for diverse applications ranging from consumer electronics to high-performance computing. MRAM technology is distinguished by its ability to offer higher endurance compared to traditional RAMs, mainly due to its robust magnetic storage elements. This characteristic extends the memory's lifespan and efficiency in data retention, minimizing data loss and ensuring reliable performance across various operating environments. As computing demands scale, MRAM serves as a steadfast component facilitating seamless data management and retrieval processes. Incorporating DXCorr’s MRAM into systems not only bolsters data security but also enhances energy efficiency, a crucial factor in the design of sustainable computing solutions. Its incorporation into semiconductor designs helps in achieving superior power-performance metrics while maintaining robustness, making it a pivotal choice for modern memory-intensive applications.
I-fuse Replaser elevates standard OTP memory solutions by addressing common flow issues associated with traditional non-volatile memories. With its non-explosive programming capability, Replaser distinguishes itself by adopting an innovative approach that simplifies the semiconductor design process, negating the need for additional charge-pump circuits. The Replaser variant supports a broad spectrum of process nodes, ranging from the classical 0.7 µm to the contemporary 12 nm, offering a versatile integration that fulfills unique design demands. By retaining robust programmability and superior operational ranges, it solidifies its stance in advanced applications demanding consistency and reliability. This tailored solution assures seamless implantation into various applications, improving overall device resilience and lowering failure rates. It empowers products where stable memory performance under varied environmental conditions is vital, ensuring optimal functionality across automotive, industrial, and other mission-critical domains.
The I-fuse S3 variant introduces an advanced architecture that scales effectively while maintaining a balance between size and power consumption. It revolutionizes one-time programmable memory by offering compact dimensions alongside unparalleled reliability. This innovation is explicit in its ability to function fluidly across numerous semiconductor processes, from 12 nm to 180 nm. Particularly notable is its resilience, meeting AEC-Q100 Grade 0 standards essential for modern automotive technology. This aspect assures zero defect rates, reinforcing customer confidence in high-stakes industrial and medical environments. By refining the foundational I-fuse system, the S3 ensures an optimized performance that fosters lower programming and read voltages, enhancing device efficiency. I-fuse S3 positions itself as a strategic enhancement for products seeking to differentiate on reliability and compactness, contributing fully to achieving outstanding market adaptability. This strength, coupled with its proprietary design features, drives superior results in energy efficiency and temperature management without necessitating additional complex processing enhancements.
The DDR Memory Controller by OPENEDGES is crafted to optimize the operation and efficiency of DDR memory, managing the crucial aspects of DRAM communication and control. This product embodies precision in handling data transactions, ensuring the memory subsystem operates smoothly and within performance metrics. By leveraging this controller, systems benefit from enhanced throughput and minimized latency, key factors in improving overall system responsiveness. This controller is built with a focus on adaptability, allowing seamless operation across multiple DDR standards and settings. Its architecture supports a balance between speed and power consumption, a crucial factor for modern applications that range from consumer electronics to sophisticated data centers. Integration with the DDR PHY ensures tight control and coordination, maximizing the efficiency of data handling operations. A notable feature of the DDR Memory Controller is its ability to dynamically manage memory methodologies, optimizing resource allocation to improve efficiency and ROI. This adaptability not only supports energy efficiency but also extends to varied use cases and environmental conditions, aligning with the stringent demands of today's technology landscape. As a central element in OPENEDGES' portfolio, this controller underlines the company's commitment to elevating memory subsystem capabilities.
The P-Series MRAM-DDR3/DDR4 solution from MEMTECH exemplifies endurance and reliability in challenging environments, featuring non-volatility and robust data retention even in extreme temperatures. This solution specializes in supporting MRAM with DDR3 and DDR4 interfaces, making it a versatile choice for aerospace, industrial, and high-end storage applications. Boasting advanced timing controls, MEMTECH’s P-Series supports unique operational variables tuned to MRAM technology, including specialized command periods and bank configurations. This adaptability underscores its functionality, allowing for heterogeneous modes where different memory types are managed in unified or separate chip sectors. Further supporting its adaptability is the hardware-based auto-calibration feature that streamlines integration processes, ensuring data reliability and performance scalability. With modifications designed to safeguard data integrity during power transitions, the P-Series MRAM solution is invaluable for specialized applications requiring high durability and reliability against environmental and operational stresses.
Everspin's Spin-transfer Torque MRAM (STT-MRAM) represents a leap forward in memory technology, leveraging the spin-transfer torque phenomenon for more efficient magnetic state writing. This technology operates by manipulating electron spin with a polarizing current, making it significantly more power-efficient than traditional Toggle MRAM.\n\nSTT-MRAM utilizes perpendicular magnetic tunnel junctions, enhancing data retention capability and allowing for smaller memory cell size, which is critical for developing higher density memory solutions. These attributes are particularly beneficial for data centers and enterprise storage environments, where reliable and persistent data access is paramount.\n\nThis advanced MRAM variant offers compatibility with DDR interfaces, facilitating easy integration with existing systems. Its high-density memory products maintain industry-leading endurance, making them suitable for continuous high-demand environments such as industrial IoT applications and broader embedded systems. The superior bandwidth for data transfer ensures high-speed processing, a crucial requirement for cutting-edge technological applications.
The DDR PHY solution from OPENEDGES is designed to provide optimal performance for memory systems, focusing on high-speed data access and energy efficiency. This product caters to a range of specifications required by modern computing systems, ensuring that data read/write operations are both swift and low in power consumption. By coordinating closely with the DDR Memory Controller, it enhances the overall functionality of memory subsystems while providing seamless integration into a wide range of architectures. The implementation of the DDR PHY solution focuses on reducing area footprint without compromising performance, making it ideal for systems where space is at a premium. Additionally, its design reflects an emphasis on reliability and compatibility with various DRAM types, promoting adaptability in diverse applications. The synergy between performance improvement and energy savings is at the core of its engineering, addressing key demands in high-performance computing and consumer electronics. Incorporating the DDR PHY into a memory subsystem enables enhanced control and flexibility in system operations, supporting a broad range of frequencies and ensuring robust data integrity. This solution proves valuable for industries needing high throughput and low-energy usage, effectively supporting advancements in AI and machine learning through reliable data handling. Overall, OPENEDGES' DDR PHY represents a foundational part of their memory subsystem technologies, driving efficiency and performance forward.
Ternary Content-Addressable Memory (TCAM) is an advanced memory solution, renowned for its capability to perform high-speed searches. The TCAM offerings by DXCorr are designed to expedite search operations by storing data in a manner that allows quick retrieval based on binary queries. This makes it a vital component in applications demanding rapid data access such as in network routers and database systems. As a specialized form of CAM that can store tri-state data – 0, 1, or X (don't care) – DXCorr’s TCAM enhances search speeds without compromising on data accuracy, an essential factor for optimizing functions in data networks and telecommunication systems. Such capabilities ensure that DXCorr’s TCAM excels in increasing the efficiency of network routing processes and data packet management within advanced computing systems. DXCorr's TCAM is built to adapt to varying technical specifications and challenges inherent in modern computing environments. It is engineered to meet high-performance criteria and is integral in creating systems that require extensive data sorting and real-time decision-making capabilities, reinforcing its role as a critical enabler for network and data management technologies.
Attopsemi's OTP IP is a groundbreaking one-time programmable memory solution designed for integration into standard semiconductor processes without additional masking or customization steps. This IP leverages the merits of I-fuse's patented technology, ensuring high reliability and competitive performance metrics in various manufacturing node settings, notably from 0.7 µm to 22 nm. The OTP IP stands out due to its flexibility and the broad adoption it facilitates in high-tech domains such as automotive and medical sectors. Its design is inherently compact, minimizing spatial impact on integrated circuits while maximizing programmability and operational efficiency. Furthermore, the emphasis on low power and read voltages optimizes it for devices where energy management is crucial. By supporting a broad spectrum of temperature operability and reliability standards such as AEC-Q100, this OTP memory IP contributes to a spectrum of applications, securing its place as a preferred component in the semiconductor industry's evolving landscape.
Everspin's xSPI MRAM is engineered for non-volatile memory applications where performance is crucial. Leveraging the JEDEC standard for expanded SPI interfaces, these devices offer high-speed, multiple I/O compatibility, pushing the boundaries of traditional memory usage in industrial IoT settings. With clock frequencies reaching up to 200 MHz, the devices achieve up to 400MBps for both read and write operations, significantly enhancing data throughput.\n\nThe xSPI MRAM series is suitable for diverse applications including industrial automation, process control, and automotive electronics, where reliability and speed are not negotiable. These memories require a mere 1.8V power supply, promoting energy efficiency while maintaining high performance standards.\n\nThis technology represents a significant shift towards universal memory solutions, effectively replacing older technologies such as SRAM and NvSRAM. The usability in expanded IoT networks and smart industry systems highlights its critical role in the evolving technological landscape.
PowerMiser is engineered to provide low power SRAM solutions for devices needing long battery life and minimal operational power draw. Realized on nodes like 28nm FDSOI and 22nm ULL BULK CMOS, it offers dynamic power savings exceeding 50% and leakage power savings from 21% to 38%. The product supports capacities up to 576Kbits with advanced power saving modes, including retentive light sleep for quick wake-up and deep sleep for maximum leakage savings. Its "Bit Line Voltage Control" technology ensures there are no performance trade-offs, even at lower operating voltages, making PowerMiser ideal for modern edge-AI technologies.
Weebit's Embedded ReRAM is engineered to elevate the performance of embedded systems, offering a solution that merges advanced speed with reliable retention capabilities under even the most challenging conditions. Its seamless integration into a variety of internet-connected devices underscores its efficiency. By being a memory technology rooted in the Back-End-Of-Line process, Weebit’s ReRAM uniquely minimizes interference with existing components while enhancing system performance. The technology's adaptability for different application domains, including IoT devices, ensures robust data handling and prolonged endurance. It eliminates many common compromises associated with embedded flash memory, such as size inefficiencies and power consumption issues, thus providing a scalable, cost-effective alternative that aligns with the industry's move to smaller geometries. With Weebit's ReRAM, manufacturers can achieve rapid system responsiveness while maintaining data integrity in dynamic environments. Weebit's solution is finely tuned for integration into analog and mixed-signal ICs and offers compelling benefits for the automotive and defense industries, where reliability and longevity are paramount. The ReRAM modules are available in various storage configurations, ensuring adaptability across different manufacturing processes.
HermesCORE HBM3 Controller is designed to complement the cutting-edge HBM3 memory technologies, facilitating swift and efficient memory operations. This controller is optimized for high-bandwidth, low-latency operations that are essential for fields such as graphics rendering, high-performance computing, and advanced communication technologies. With the HermesCORE HBM3 Controller, technology developers gain access to advanced data management features that ensure high-performance consistency and operational integrity under demanding conditions. Its architecture supports substantial memory transactions per second, ensuring that it aligns with next-generation data processing needs. This controller's main advantage lies in its ability to fine-tune operations, providing flexibility and reliability in managing intensive data loads. As system demands evolve, the HermesCORE HBM3 Controller remains adept at meeting high-bandwidth needs without compromising system efficiency.
Blending cutting-edge performance with reliable functionality, the QDR IV XP PHY is tailored for high-speed memory applications, aligning with modern Quad Data Rate memory standards. Its memory interface operates at incredible speeds, making it a highly valuable component in fine-tuning data-intensive ecosystems like servers and high-performance networking. This flexible design includes two bidirectional data ports and is optimized for integration into FPGA systems, where fine-tuned calibration ensures accurate signal integrity and robust operation under demanding throughput conditions.
Everspin's MRAM solutions for radiation-hard markets are specifically crafted to withstand the challenging conditions beyond Earth's atmosphere. Traditional electronic memories suffer from data integrity issues in high-radiation environments, but MRAM provides a robust solution, ensuring data is preserved without power.\n\nLeveraging magnetoresistive properties, this memory type exhibits zero hard errors at high radiation levels, crucial for aerospace and defense applications. As the sole U.S.-based MRAM provider, Everspin manufactures these devices to strict quality standards, ensuring reliability in mission-critical operations.\n\nWith the ability to operate with various CMOS front-end options, their MRAM solutions offer versatility and customization, allowing deployment in both discrete and embedded formats. This adaptability ensures a broad application spectrum, from satellites to military-grade devices, where performance and durability are paramount.
MidasCORE HBM3 PHY is engineered to support applications that demand high memory bandwidth, such as graphics, high-performance computing, and communication systems. Emphasizing speed and efficiency, this PHY IP manages to deliver unparalleled memory bandwidth alongside minimized latency and augmented data density capabilities. This HBM3 PHY solution showcases enhanced interactivity with interface standards, assuring seamless connectivity within complex system assemblies. The innovation in its design allows for maximized data transfers, responding adeptly to the increasing memory demands seen in technological advancements across multiple fields. MidasCORE capitalizes on improved design techniques to minimize power consumption while maximizing data throughput, making it an exceptional choice for modern data centers and enterprise-grade solutions. Its adaptability and superior performance metrics cement its importance in environments where data access speed and processing efficiency are crucial.
Nexperia's SiC Schottky Diode is an innovative semiconductor component designed for high-efficiency power conversion and high-temperature operations. Benefiting from Silicon Carbide (SiC) technology, this diode is engineered to handle high voltages and current with minimal power loss. Its low forward voltage drop and almost negligible reverse recovery time make it a prime choice for applications that demand rapid switching and low energy dissipation, such as power supply units and photovoltaic inverters. The SiC Schottky Diode sets a new standard in the industry for thermal stability and efficient performance. Its ability to operate at higher temperatures than traditional diodes without additional cooling solutions provides significant advantages in high-density power electronics. This characteristic is particularly beneficial in areas where space constraints are coupled with demanding thermal conditions, allowing for more compact and reliable designs. Its applications extend across various sectors, offering improvements in efficiency for consumer electronics, industrial power systems, and automotive components, notably in charging systems and energy management. The diode's rugged performance and durability under demanding electrical conditions make it a dependable component for enhancing the reliability and longevity of modern electronics.
Enabling rigorous testing in SystemVerilog, the Hybrid Memory Cube Verification IP plays a critical role in assuring quality within complex SoC deployments. This verification tool assists engineers in executing compliance testing through a configurable environment that supports the complete protocol for both standalone and integrated testing setups. The adaptable nature of the HMC VIP allows targeting multiple design flows, solidifying it as a crucial backbone for verification processes that demand high customization and reliable results.
The FlashKit platform serves as a pivotal resource for developers focused on energy-efficient SoC development. It includes comprehensive support for various flash memory technologies, such as SONOS and SST, offering designers flexible solutions tailored to specific application needs. This platform underscores energy conservation, making it ideal for projects prioritizing low power consumption. With built-in testing solutions, FlashKit accelerates the development phase, offering streamlined tools to verify flash memory subsystems swiftly. It caters to the needs of developers by providing a reliable path to integrate various flash technologies into their SoCs, thus ensuring optimal energy usage without compromising performance or reliability. Furthermore, the platform offers robust support for standard operating procedures, providing a seamless transition from traditional development environments. By emphasizing power efficiency, FlashKit plays a crucial role in enabling manufacturers to reduce overall system power demands, ensuring competitive advantages in energy-sensitive markets.
The DDR interface solutions by KNiulink Semiconductor are built on advanced architecture and technology designed to deliver high performance with low power consumption. This comprehensive solution supports DDR3, DDR4, DDR5, and LPDDR2/3/4/4x/5, providing a wide range of options suitable for various applications. These solutions are crafted to meet the burgeoning demands for faster processing speeds and increased bandwidth required by today's data-intensive applications in fields such as computing, networking, and consumer electronics. With excellent energy efficiency, they help reduce overall system power claims while maintaining performance integrity. This versatility makes KNiulink's DDR IP an ideal choice for industries looking to optimize their memory controller solutions without compromising on speed and efficiency.
SLL's Modular PHY Type 01 Suite is a PVT aware, foundry and process agnostic, PHY for use with most single-ended LVCMOS protocols up to 400 MHz DDR. The PHY has a highly modular architecture that supports x1, x4, x8, and x16 data paths. Its has process-voltage-temperature (PVT) controls that are suitable for use in hard realtime systems (zero timing interference on PVT adjustments). The PHY includes a full standard cell library abstraction. The PHY also offers >1000 configurable options at compile time, enabling coarse grain capabilities such as pin-level deskew to be enabled/disabled, along with precise fine-grain control of mapping of RTL to gates through various data paths. It supports a range of protocols such as SPI, QSPI, xSPI, eMMC, .. and allows run-time configuration via an APB3 control port. It is designed to support easy place-and-route in a broad range of customer designs.
Join the world's most advanced semiconductor IP marketplace!
It's free, and you'll get all the tools you need to discover IP, meet vendors and manage your IP workflow!