TwinBit Gen-2 enhances the prior version by supporting more advanced process nodes, spanning from 40nm to 22nm and adapted for further processes. It retains the simplicity of integration found in Gen-1, with no requirement for additional process steps, masks, or auxiliary charges despite its sophistication and efficiency enhancements.
This memory technology leverages a newly developed Pch Schottky Non-Volatile Memory Cell that optimizes power consumption for ultra-low-power operations. The tech allows controlled hot carrier injection by cell bias during the program/erase cycle, ensuring the retention and reliability of data throughout its lifecycle. TwinBit Gen-2 thus guarantees a heightened level of operational efficiency for modern electronic devices.
Suitable for various memory applications demanding high security and low energy consumption, TwinBit Gen-2 is a valuable asset in fields like IoT and other high-volume consumer electronics requiring reprogrammable memory infrastructure. By achieving this balance, TwinBit Gen-2 establishes itself as a leading non-volatile memory solution in the evolving semiconductor market.
