TwinBit Gen-2 marks an advanced step in NSCore's non-volatile memory offerings, designed for process nodes from 40nm to 22nm and potentially beyond. Like its predecessor, Gen-2 integrates smoothly into existing manufacturing processes without the need for additional masks or process alterations. This IP is enhanced by its use of the novel Pch Schottky Non-Volatile Memory Cell, which is engineered to optimize for ultra-low-power operations.
A key attribute of TwinBit Gen-2 is its capacity to support high-density non-volatile memory demands with improved energy efficiency, making it apt for devices where power consumption is pivotal. Its hot carrier injection control via cell bias, paired with its unique memory cell configuration, facilitates versatile memory operations that are fundamental in modern CMOS technology.
Applications for TwinBit Gen-2 encompass high-demand fields such as embedded system design and battery-sensitive environments. Its streamlined design and process adaptation capabilities maintain NSCore's commitment to delivering state-of-the-art memory technologies that meet stringent energy and performance standards.
