Toggle MRAM Technology is a high-density memory solution utilizing a 1 transistor, 1 magnetic tunnel junction (MTJ) cell design. This patented configuration ensures excellent reliability with non-volatility guaranteed for 20 years at varying temperatures. The device operates by reading data via resistive comparisons against reference devices and writing data using magnetic fields created by intersecting write lines. MRAM integrates the speed of SRAM and the endurance of Flash memory, eliminating wear-out and supporting an "instant-on" feature coupled with power loss protection.
