Toggle MRAM is designed using a one transistor, one magnetic tunnel junction (MTJ) memory cell configuration. It leverages a patented Toggle cell design that ensures high reliability and data retention for over 20 years. During operation, the device reads data by comparing the resistance of the MTJ, which can exist in a low or high resistance state. This characteristic provides it with non-volatility akin to flash memory while maintaining the speed associated with SRAM, making it a versatile memory solution for various electronic systems.
