Everspin's Toggle MRAM stands as a leading non-volatile memory solution, emphasizing simplicity and reliability. It utilizes a one transistor, one magnetic tunnel junction cell design, ensuring high durability and data integrity over 20 years. The patented Toggle MRAM cell employs a magnetic tunnel junction (MTJ) composed of a fixed magnetic layer, a dielectric tunnel barrier, and a free magnetic layer. This architecture allows data to be stored in a manner that combines the endurance of SRAM with the long-term reliability of Flash.\n\nToggle MRAM is fundamentally different from traditional volatile memory technologies. During read processes, the device activates the pass transistor, comparing the cell's resistance to a reference device to retrieve data, while write operations are conducted through magnetic field interactions, ensuring precision without disturbing adjacent cells. This unique setup offers 'instant-on' capabilities, providing reliable operation across a wide temperature range.\n\nThis technology is not only valued for its high performance but also for its versatility. With applications spanning from industrial control systems to consumer electronics, Toggle MRAM ensures data preservation in power-loss scenarios, offering a robust solution for increasing electronic system demands.
