Thermal oxide or SiO2 is a pivotal insulating film utilized in semiconductor devices, serving functions as both ‘field oxide’ and ‘gate oxide’. NanoSILICON, Inc. provides robust thermal oxide processing services using silicon wafers oxidized in high-temperature furnaces ranging from 800°C to 1050°C. The process ensures high purity and low defects, leveraging quartz tubes that provide a stable, high-temperature environment to produce high-density, high-breakdown voltage films.
The dry oxidation process involves a reaction of silicon with oxygen to form SiO2, characterized by slow growth but resulting in a high-density layer ideal for isolation purposes. Conversely, the wet oxidation process engages steam, enabling rapid growth of the oxide layer even at lower temperatures, suitable for creating thicker oxides. This flexibility ensures that NanoSILICON can cater to a variety of requirements for different semiconductor applications.
NanoSILICON ensures batch thickness uniformity and an impressive degree of thickness accuracy within wafers. Their use of equipment such as the Nanometrics 210 guarantees precise measurement and adherence to specific industry standards. This focus on meticulous quality control assures that the thermal oxides produced meet stringent electrical and physical specifications necessary for reliable device performance.
