Thermal oxide, or SiO2, plays a critical role in semiconductor devices due to its dielectric properties, serving as an insulating layer in various electronic components. At NanoSILICON, Inc., the thermal oxide process is refined through the precise use of high purity silicon substrates to create thin films that isolate conductive layers on semiconductor devices. These oxide layers, whether used as 'field oxide' or 'gate oxide', are pivotal in the miniaturization and increased performance of electronic devices we use daily.
The process involves heating silicon wafers in a controlled environment, utilizing furnaces that stabilize at temperatures ranging from 800°C to 1050°C. These furnaces employ quartz carriers to prevent structural warping, ensuring meticulous temperature control and even oxide growth. Through variations in the oxidation process (dry or wet oxidation), the oxide layers can be grown to different thicknesses, offering flexibility in applications based on the required specifications of the device.
NanoSILICON's capabilities include both wet and dry thermal oxide processes, leveraging ultra-high purity oxygen and steam to produce oxide layers with excellent uniformity. By using advanced tools like the Nanometrics 210 for thickness verification, the company ensures oxide films meet stringent uniformity and refractive specifications, critical for the latest technological applications in the semiconductor industry.
Their comprehensive approach to thermal oxidation not only enhances device performance but also supports a diverse range of wafer sizes and configurations, catering to the bespoke needs of their clients. Whether for bulk silicon wafers or more complex silicon-on-insulator variants, their thermal oxide processing ensures reliability and quality in semiconductor manufacturing.
