The Spin-transfer Torque (STT) MRAM by Everspin leverages the spin-transfer torque attribute, manipulating electron spins with a polarizing current to achieve desired magnetic states. This technology significantly reduces switching energy compared to older MRAM types like Toggle. With its scalable design, it supports higher density memory products offering long data retention and minimal power consumption. STT-MRAM utilizes a perpendicular MTJ, known for its high endurance and data retention capabilities, making it suitable for data center, industrial IoT, and embedded systems applications.
