Spin-transfer Torque MRAM (STT-MRAM) from Everspin employs the unique property of spin-transfer torque to set the desired magnetic state in the memory cell. This advancement allows for significantly reduced switching energy compared to toggle MRAM, thus achieving higher memory density in a scalable manner. Everspin's STT-MRAM is built with a perpendicular magnetic tunnel junction (MTJ), featuring high magnetic anisotropy for superior data retention.
With STT-MRAM, writing data entails directing a polarizing current through the MTJ, which adjusts the magnetic state of the free layer. When aligned with the fixed layer, the MTJ is in a low resistance state, and when anti-aligned, it presents high resistance. This configuration equates to a binary bit cell state of logic one or zero, providing efficient data processing capabilities.
Delivering JEDEC standard-like DDR4 interface features, this technology seamlessly integrates with data centers and enterprise storage, offering persistent memory with exceptional endurance and extended temperature operation ranges. It's refined to serve both Industrial IoT and embedded systems, utilizing the new xSPI interface for high-speed data transfers with reduced pin requirements.
