ReRAM, or Resistive RAM, is a revolutionary memory technology developed by CrossBar. It utilizes a unique structure, comprising a simple three-layer design that leverages a top electrode, a switching medium, and a bottom electrode. This assembly allows for the formation of a filament within the switching material when a voltage is applied, resulting in efficient and stable resistance switching. One of the remarkable features of ReRAM is its capability to scale beyond traditional limits, making it highly adaptable in terms of its integration with logic processes across various foundries and down to technology nodes smaller than 10nm.
This technology powers a new era of memory storage, offering terabytes of data capacity directly on a single chip through its ability to stack in 3D formations. ReRAM's compatibility with CMOS processes facilitates its deployment in both standalone memory devices and System-on-Chip (SoC) designs. Moreover, it boasts an impressive endurance, with over a million write cycles and a decade-long retention period at elevated temperatures of 85°C, making it an excellent choice for high-performance and high-density applications, including artificial intelligence and secure computing.
By offering multifaceted ReRAM IP cores, CrossBar caters to a variety of applications ranging from automotive and industrial to mobile and consumer electronics. Its advantages over conventional Flash memory are evident in reduced latency, faster write speeds, and lower energy consumption, which collectively contribute to enhanced lifetime and performance of storage solutions in modern digital environments.
