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All IPs > Memory Controller & PHY > SRAM Controller > MRAM - Magnetoresistive Random-Access Memory

MRAM - Magnetoresistive Random-Access Memory

From DXCorr Design

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Description

Magnifying the potential of non-volatile memory technologies, DXCorr's MRAM efficiently bridges the gap between traditional storage capabilities and modern memory demands. MRAM offers persistent data retention without power, making it a key player in power-sensitive applications such as wearable devices and smart gadgets.

MRAM features high endurance and write speeds which significantly surpass traditional Flash or EEPROM solutions. This positions it as a competitive choice in environments where endurance and performance are paramount, such as in automotive control systems and industrial IoT applications.

With its capability to function in harsh conditions and support for concurrent read and write operations, DXCorr's MRAM ensures seamless data flow and reliability. Its integration across various FinFET and FDSOI process nodes marks DXCorr's MRAM as versatile within a broad array of electronic systems.

DXCorr's advancements in MRAM technology contribute significantly to enhanced storage solutions that promise lower latency and increased storage efficiency, underpinning its role in the evolving landscape of semiconductor memories.

Foundries & Process Nodes
Foundry Process Nodes
TSMC 3nm
4nm
7nm
28nm
90nm
150nm
180nm
Tech Specs
Class Value
Categories Memory Controller & PHY > SRAM Controller
Memory & Logic Library > Embedded Memories
Availability All Countries & Regions
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