The LEE Flash ZT is crafted for trimming and parameter storage, especially focusing on automotive and analog IC applications. It boasts a Zero Additional Mask technology, requiring no new process steps, thus ensuring ease of implementation and significantly reduced cost.
Operating efficiently in harsh environments, the ZT memory supports a wide temperature range and long retention life. It utilizes FN tunneling to achieve exceptionally low power consumption, which greatly shortens testing time and therefore contributes to cost savings.
Flexible and robust, the LEE Flash ZT is compatible with standard CMOS processes, allowing existing design and IP reuse. This makes it an optimal solution for applications seeking minimal disruption in existing manufacturing workflows while requiring durable memory solutions for critical settings.
