The LEE Flash G2 builds upon its predecessor, offering a Flash solution that harmoniously combines with logic circuits while minimizing costs and power consumption. It's based on a simple SONOS memory cell structure, allowing seamless integration with standard logic, thus converting volatile SRAM circuits into non-volatile versions.
This innovation removes the need for isolation areas and additional high voltage requirements during read operations, enhancing layout flexibility and power efficiency. Capable of supporting large memory capacities up to a few Megabytes, LEE Flash G2 stands out for its compatibility with existing CMOS processes and its ability to maintain performance without altering design characteristics.
The G2 utilizes a very low power Fowler-Nordheim tunneling mechanism, ensuring minimal current consumption during programming and erasing, which leads to significantly reduced testing time and expenses. Its architecture is particularly advantageous in automotive applications requiring high-temperature operations and long data retention periods.
