The LEE Flash G2 represents a new generation of flash memory that transcends traditional capabilities, offering unprecedented integration and performance benefits. Designed with a unique SONOS architecture, the G2 FLASH enhances conventional flash functionalities by integrating logic operations, thus fostering the development of highly efficient system-on-chip designs.
A standout feature of the LEE Flash G2 is its ability to function with standard logic-level voltages during read operations, unlike typical embedded NVMs that require high voltages for these tasks. This feature facilitates seamless integration with existing logic circuits, eliminating the necessity for isolated high-voltage sectors within the design. Ultimately, this results in a more compact and efficient layout that supports both logic and memory functions in a single cell.
Moreover, the combination of SONOS memory with SRAM elements within the same system introduces a non-volatile SRAM capability, greatly enhancing speed and reliability. This amalgamation allows quick data transfer between SRAM and the G2 cell during power cycles, resulting in swift system resume operations and reduced power consumption. This innovation positions the LEE Flash G2 as a foundational component in the creation of cutting-edge memory architectures for a variety of devices.
