The LEE Flash G2 represents an evolution in flash memory technology, often referred to as "Flash beyond Flash". This product utilizes an advanced SONOS architecture, which allows for the merging of volatile SRAM functionality with non-volatile flash capabilities within a single device.
This technology differs significantly from traditional memory systems by eliminating the need for high voltage areas within the memory block itself, permitting direct connectivity between memory cells and their surrounding logic circuits. Through the use of tri-gate transistors and minimal programming current demands, the G2 can function efficiently with logic-level voltages, which is ideal for power-sensitive applications.
LEE Flash G2 is designed to change the architecture of memory in microcontrollers, offering high-speed access times and low power requirements. This novel setup facilitates rapid data saving and retrieval, greatly enhancing the overall performance of devices that incorporate it. As the demands on devices for speed and power continue to increase, the G2's unique capabilities make it a compelling choice for both new and existing electronic systems.
