The LEE Flash G1 by Floadia is a cost-effective SONOS (Silicon-Oxide-Nitride-Oxide-Silicon) flash memory that promises high reliability. This memory type leverages the distribution of electric charge within a trap, which minimizes charge leakage that can occur through defects. This is mainly due to the charges being firmly bonded to their sites within the silicon nitride layer.
Employing Fowler–Nordheim tunneling for both program and erase operations, this flash technology mitigates oxide degradation, which can be a challenge in conventional memory types. The trapping mechanism means electrons and holes are evenly distributed across the device, minimizing wear even after extensive programming cycles, ensuring long-term reliability.
The G1 model is optimal for applications requiring low power consumption and is easily integrated into existing manufacturing processes, utilizing familiar materials. By maintaining oxide quality, manufacturers can anticipate reduced costs and swift testing phases due to the low current levels needed for operation. The G1 provides an ideal solution for applications requiring stringent AEC Q100, Grade 0 compliance without increasing manufacturing complexity.
