The LEE Flash G1 is a highly cost-effective Flash memory solution, leveraging SONOS technology. Designed to support harsh automotive environments, this memory IP is scalable down to 40nm technology. It is ideal for applications necessitating medium memory capacity, providing long retention life and low power operation.
This Flash memory solution requires only two to three additional masks, showcasing its compatibility with standard CMOS processes without altering the characteristics of logic transistors. Its short testing and bake time further reduce chip costs, facilitating low-cost implementation for various applications.
LEE Flash G1’s efficiency extends to its program and erase operations, utilizing Fowler Nordheim tunneling to minimize power consumption dramatically. This technology ensures smooth integration into existing design frameworks, offering extended data retention and high-temperature resilience.
