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All IPs > Analog & Mixed Signal > Power Management > Dual-Drive™ Power Amplifier - FCM1401

Dual-Drive™ Power Amplifier - FCM1401

From Falcomm

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Description

The FCM1401 Dual-Drive™ Power Amplifier is tailored for Ku-band applications, utilizing CMOS technology to deliver solutions between 12.4 to 16 GHz. This product is designed to optimize power output while maintaining a compact silicon footprint. Notable for its excellent efficiency, the FCM1401 addresses the specific demands of telecom and satellite communications applications. The amplifier provides reliable performance characterized by a gain of 22 dB and a Psat of 19.2 dBm, achieving a power-added efficiency of 47% while operating at a supply voltage of 1.8V. Through these specifications, it positions itself as an ideal solution for applications requiring high power output and minimal heat generation.

This product benefits from world-class CMOS integration, ensuring compatibility with modern telecom systems, enhancing their range and reducing their energy costs. The FCM1401 is equipped with a QFN/EVB package, allowing for straightforward implementation in various industrial contexts. It sets itself apart by offering an increased frequency range while delivering robust power handling capabilities, facilitating the high RF power needs of contemporary communication systems.

The dual-drive capability of the FCM1401 means that it can effectively double the input signal power into the output without losing efficiency, making it highly suited for use in mission-critical operations where reliability and performance are paramount. Its high power-added efficiency also translates to cooler operation, reducing the need for extensive thermal management solutions, thus lowering associated costs.

Features
  • High Efficiency
  • Compact Silicon Footprint
  • Wide Frequency Range
Foundries & Process Nodes
Foundry Process Nodes
TSMC 28nm
Tech Specs
Applications
  • Ku-band Applications
  • Satellite Communications
  • Telecom Systems
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