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All IPs > Interface Controller & PHY > I2C > A 1.8V/3.3V SWITCHABLE GPIO WITH 5V I2C OPEN DRAIN AND ANALOG CELLS IN SAMSUNG 11NM TECHNOLOGY

A 1.8V/3.3V SWITCHABLE GPIO WITH 5V I2C OPEN DRAIN AND ANALOG CELLS IN SAMSUNG 11NM TECHNOLOGY

From Certus Semiconductor

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Description

A key attribute of this library is its ability to detect and dynamically adjust to a VDDIO supply of 1.8V or 3.3V during system operation. The GPIO cell can be configured as input, output, open source, or open drain with an optional internal 50K ohm pull up or pull down resistor. Four selectable drive strengths are offered (25 235MHz @ 1.8V, 10pF) to optimize across SS) currents & power. The output driver exhibits 50 ((20%) termination across PVT to reduce reflections at higher operating frequencies. Supply cells for VDDIO, VREF, and core VDD include necessary built in ESD circuitry. A 5VI2C / SMBUS open drain (fail safe) cell, 5V OTP, programming gate cell and 1.8V & 3.3V analog cells with ESD protection are included. The library features protection break cells to allow for separate grounds while maintaining ESD robustness. ESD design targets 2kV HBM, & 50 0V CDM, yet this library has constantly demonstrated 4kV HBM. This library can also support 2kV IEC 6100-4-2 system ESD with appropriate integration.

Deliverables
Hard IP
  • Verilog
  • GDS
  • LEF/DEF
  • Timing (Lib file)
  • Extracted netlist
  • Datasheet
  • Integration guide
Foundries & Process Nodes
Foundry Process Nodes
Samsung 11nm FinFET
Tech Specs
Class Value
Categories Interface Controller & PHY > I2C
Memory & Logic Library > I/O Library
PDK Version Various
Silicon Validated Yes
In Production? Yes
Metallization Multiple >1P9M
Automotive Grade Qualified YES
Key I/O Standards I2C, SMBus, AVS, PMBus, DDC, CEC, LVCMOS, ONFI, LPDDR, RGMII
Availability All Countries & Regions
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